2.4 GHZ 2 WATTS AMPLIFIER SCHEMATIC DIAGRAM Search Results

smd diode J476

Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Contextual Info: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Contextual Info: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization

Contextual Info: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold

10147

Abstract: GE capacitor 2R13-6 G200
Contextual Info: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold

G200

Abstract: 10147
Contextual Info: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold

transistor D 1666

Abstract: PTE10021 bq 726
Contextual Info: E R IC SSO N í PTE 10021* 30 Watts, 1 . 4 - 1 . 6 GHz L D M O S Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applica­ tions in the 1.4 to 1.6 GHz range. It is rated at 30 watts minimum output

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

ATP10K100M

Abstract: 100w1000 Amplifier Research LA250
Contextual Info: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation

Contextual Info: Applications • WiMAX, WCDMA, and LTE base station receivers Ultra Low Noise Amplifiers LNAs • WLAN enterprise access point receivers Select LNAs Available from Stock for Prototype or High-Volume Production • GPS receivers Skyworks Solutions offers a select group of ultra low noise, high linearity low noise

MRF186

Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
Contextual Info: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

MRF186

Contextual Info: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

MRF186 equivalent

Contextual Info: MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

MRF186

Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186 9601 mosfet
Contextual Info: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

Logarithmic Amplifier detector

Contextual Info: HMC713LP3E v00.0909 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz Typical Applications Features The HMC713LP3E is ideal for: Wide Dynamic Range: up to 54 dB • Cellular Infrastructure High Accuracy: ±1 dB with 54 dB Range Up To 2.7 GHz • WiMAX, WiBro & LTE/4G

HMC 713

Abstract: hmc713lp3e HMC713
Contextual Info: HMC713LP3E v01.1009 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz Typical Applications Features The HMC713LP3E is ideal for: Wide Dynamic Range: up to 54 dB • Cellular Infrastructure High Accuracy: ±1 dB with 54 dB Range Up To 2.7 GHz • WiMAX, WiBro & LTE/4G

HMC713MS8

Contextual Info: HMC713MS8 / 713MS8E v03.0409 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 100 - 2700 MHz Typical Applications Features The HMC713MS8 E is ideal for: Wide Dynamic Range: up to 54 dB • Cellular Infrastructure High Accuracy: ±1 dB with 54 dB Range Up To 2.7 GHz

H713

Abstract: HMC713 apc ups schematic DC 0509
Contextual Info: HMC713MS8 / 713MS8E v04.0509 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 100 - 2700 MHz Typical Applications Features The HMC713MS8 E is ideal for: Wide Dynamic Range: up to 54 dB • Cellular Infrastructure High Accuracy: ±1 dB with 54 dB Range Up To 2.7 GHz

H713

Contextual Info: HMC713MS8 / 713MS8E v05.1009 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 100 - 2700 MHz Typical Applications Features The HMC713MS8 E is ideal for: Wide Dynamic Range: up to 54 dB • Cellular Infrastructure High Accuracy: ±1 dB with 54 dB Range Up To 2.7 GHz

H713

Abstract: HMC713
Contextual Info: HMC713MS8 / 713MS8E v00.1008 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 100 - 2700 MHz Typical Applications Features The HMC713MS8 E is ideal for: Wide Dynamic Range: up to 54 dB • Cellular Infrastructure High Accuracy: ±1 dB with 54 dB Range Up To 2.7 GHz

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1