2. GERMANIUM Search Results

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 High Gain: |S21e| =12.5 dB typ. (@ f=1 GHz) 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR R5 1 1 0.7±0.05

OA72

Abstract: diode aa119 AA119 germanium rectifier diode 2-OA72 Diode germanium oa OA72 diode aa119 diode aa1* germanium germanium rectifier
Contextual Info: OA72 2 -O A 7 2 G E R M A N IU M DIO DES Germanium r . f . re c tifie r diode in all g lass construction with high re v e rs e r e ­ sistan ce. Type 2-OA72 con sists of 2 diodes OA72 selected fo r operation in a ratio d etec­ to r or sim ila r c ir c u its .

Contextual Info: MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm Features • Low Noise Figure :NF=1.7dB @f=5.8GHz • High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P 2 1 USQ 2 Absolute Maximum Ratings (Ta = 25°C)

2N2659

Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
Contextual Info: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE

diode OA-79

Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
Contextual Info: 0A79 2-O A79 G E R M A N IU M DIODE Germanium diode in all g la ss construction for use in a .m . detector circu its. Type 2-OA79 consist* of 2 diodes OA79 selected lo r operation in a ratio detector circuit. MECHANICAL DATA Dimensions in mm not tlnntd The white band indicates

Contextual Info: 1N270 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. 0 .1 0 5 [2 . 6 6 7 ] 0 . 0 1 9 -0 .0 2 1 0 . 4 8 3 -0 . 5 3 3 ] 1.000 [2 5 .4 0 ] MAXIMUM RATINGS 200 If mA p e a k

2N512

Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power
Contextual Info: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE

Contextual Info: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 L7 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,

Contextual Info: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,

726-BGA622H6820

Abstract: marking BXs SOT343 lna Germanium power
Contextual Info: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,

BGA622

Abstract: GPS05605 JESD22-A114 Germanium power
Contextual Info: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,

2SB156

Abstract: 2SB156A transistor 2sb561 SB156A GERMANIUM HITACHI 2SB561 SB156 Germanium Transistor 55B8
Contextual Info: 2 S B 1 5 6 , 2 S B 1 S 6 A GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT - 10.2max—- — 38.1min—1. -*• ì -v r 1* | - . 1. i 9 \ E m itte r 2. ^ , ^ • B ase 3. 3 ^ 7 I ? ! C o llecto r D im en sio n s in m m (JEDEC TO-1 ABSOLUTE MAXIMUM RATINGS (Ta=25Xi)

tunnel diodes

Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
Contextual Info: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance

Contextual Info: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P7 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics

Contextual Info: MT4S301T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C

Contextual Info: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics

Contextual Info: MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.8±0.05 2 1 High Gain:|S21e|2=10.5dB @f=5.2GHz 4 • 1.2±0.05 Low Noise Figure :NF=1.25dB (@f=5.2GHz) 3

Contextual Info: MT4S300T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P3 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C

Contextual Info: MT4S104U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 1 0.2+0.1 –0.05 3 High Gain:|S21e|2=10.0dB @f=5.2GHz 4 • 2.0±0.2 Low Noise Figure :NF=1.25dB (@f=5.2GHz)

Contextual Info: MT4S104U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 1 0.2+0.1 –0.05 3 High Gain:|S21e|2=10.0dB @f=5.2GHz 4 • 2.0±0.2 Low Noise Figure :NF=1.25dB (@f=5.2GHz)

Contextual Info: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 4 3 1.2±0.05 2 0.2±0.05 High Gain:|S21e| =17.0dB @f=2GHz 1 • 2 Low Noise Figure :NF=0.72dB (@f=2GHz) 0.8±0.05 •

Contextual Info: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 0.2+0.1 –0.05 2 1 High Gain:|S21e|2=15.0dB @f=2GHz 3 • 4 Low Noise Figure :NF=0.58dB (@f=2GHz) 2.0±0.2

Contextual Info: MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 1 0.2+0.1 –0.05 3 High Gain:|S21e|2=9.5dB @f=5.8GHz 4 • 2.0±0.2 Low Noise Figure :NF=1.7dB (@f=5.8GHz)

Vcc-1400

Abstract: MV MARKING
Contextual Info: NBSG11 2.5V/3.3V SiGe 1:2 Differential Clock Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG11 is a Silicon Germanium 1-to-2 differential fanout buffer, optimized for low skew and ultra-low JITTER. Inputs incorporate internal 50 W termination resistors and accept