NCE0224DA
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NCEPOWER
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NCE0224DA N-channel enhancement mode power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 62mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low on-resistance and high efficiency in power switching applications. |
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AK0224D
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AK Semiconductor
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AK0224D N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 64mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in power switching applications. |
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BP85224DA
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Bright Power Semiconductor Co Ltd
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BP85224DA is a high-voltage integrated circuit with DRAIN, FB, IC-GND, VOUT, and GND pins, featuring PWM/PFM control, built-in oscillator, overvoltage, overload, and short-circuit protection for power supply applications. |
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NCE0224D
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NCEPOWER
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NCE0224D N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 64mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in power switching applications. |
Original |
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AK0224DA
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AK Semiconductor
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AK0224DA N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 62mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching applications. |
Original |
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NCE0224DA
