2 NCH MOSFET Search Results

SVI 2004 A

Abstract: SVI 2004 TPC8028 tpc8026 toshiba f5d tpc8117 IC SEM 2004 tpc8118 toshiba smd marking SVI 2004 C
Contextual Info: Medium Power MOSFETs Low Voltage＆ LowResistance series February, 2007 Copyright 2007, Toshiba Corporation. Low Resistance Trend 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI February, 2007 2 Trend Map on Power MOSFET for LiB PCM

Contextual Info: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04

Contextual Info: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04

Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02

tpc8118

Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
Contextual Info: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ

transistor 7B1284

Abstract: Z diode
Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02

US6K

Abstract: US6K4
Contextual Info: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04

Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02

TKM2502Y

Abstract: FET n-ch 1 ohm
Contextual Info: Drain common dual Nch power MOS FET / TKM2502Y Page 1 of 2 New Drain common dual Nch power MOS FET TKM2502Y Description The TKM2502Y is a drain-common dual Nch power MOS-FET. Excellent resistor characteristics make it ideal for power management in 2-channel battery protection

Contextual Info: 1.2V Drive Nch + Nch MOSFET UM6K33N Dimensions Unit : mm Structure Silicon N-channel MOSFET UMT6 (SC-88) <SOT-363> Features 1) High speed switing. 2) Small package(UMT6). 3) Ultra low voltage drive(1.2V drive). (6) (1) (5) (2) (4) (3) Application

Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET MP6K14  Structure Silicon N-channel MOSFET  Dimensions Unit : mm MPT6 (Duel) Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive). (6) (5) (4) (1) (2) (3)  Application

UM6K33N

Contextual Info: 1.2V Drive Nch + Nch MOSFET UM6K33N Dimensions Unit : mm Structure Silicon N-channel MOSFET UMT6 (SC-88) <SOT-363> Features 1) High speed switing. 2) Small package(UMT6). 3) Ultra low voltage drive(1.2V drive). (6) (1) (5) (2) (4) (3) Application

AT1730

Abstract: AT1730P J-STD-020A TSSOP16
Contextual Info: AT1730 Preliminary Product Information 2-Channel PWM Controller for LCD Bias Features General Description • Low input voltage: 2.4V to 6V • 2-Channels PWM Control: Nch-MOSFET driving CH1 Nch/Pch-MOSFET driving(CH2) • Adjustable Soft start time and maximum duty

Contextual Info: 2.5V Drive Nch + Nch MOSFET UM6K31N Structure Silicon N-channel MOSFET Dimensions Unit : mm UMT6 (SC-88) <SOT-363> Features 1) High speed switing. 2) Small package(UMT6). 3) Low voltage drive(2.5V drive). (6) (1) (5) (2) (4) (3) Application Switching

Contextual Info: 2.5V Drive Nch + Nch MOSFET UM6K31N Dimensions Unit : mm Structure Silicon N-channel MOSFET UMT6 (SC-88) <SOT-363> Features 1) High speed switing. 2) Small package(UMT6). 3) Low voltage drive(2.5V drive). (6) (1) (5) (2) (4) (3) Application Switching

Contextual Info: 2.5V Drive Nch + Nch MOSFET EM6K31  Structure Silicon N-channel MOSFET  Dimensions Unit : mm EMT6 Features 1) High speed switing. 2) Small package(EMT6). 3) Low voltage drive(2.5V drive). (4) (5) (6) (1) (2) (3) Abbreviated symbol : K31  Application

UM6K31N

Abstract: N-Channel mosfet sot-363 um6k31
Contextual Info: 2.5V Drive Nch + Nch MOSFET UM6K31N Dimensions Unit : mm Structure Silicon N-channel MOSFET UMT6 (SC-88) <SOT-363> Features 1) High speed switing. 2) Small package(UMT6). 3) Low voltage drive(2.5V drive). (6) (1) (5) (2) (4) (3) Application Switching

Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET MP6K12  Structure Silicon N-channel MOSFET  Dimensions Unit : mm MPT6 (Duel) Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive). (6) (5) (4) (1) (2) (3)  Application

Contextual Info: 4V Drive Nch + Nch MOSFET MP6K31  Structure Silicon N-channel MOSFET  Dimensions Unit : mm MPT6 (Dual) Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (MPT6). 3) Low voltage drive. (4V) (6) (5) (4) (1) (2) (3)  Application

Contextual Info: SP8K31FRA SP8K31 Transistor 4V Drive Nch+Nch MOSFET AEC-Q101 Qualified SP8K31 SP8K31FRA zDimensions Unit : mm zStructure Silicon N-channel MOSFET SOP8 zFeatures 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). zApplications Switching

Contextual Info: ES6U41 2.5V Drive Nch+SBD MOSFET ES6U41 Dimensions Unit : mm Structure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 Features 1) Nch MOSFET and schottky barrier diodeare put in WEMT6 package. 2) High-speed switching, Low On-resistance.

qs8k12

Contextual Info: QS8K12 Data Sheet 4V Drive Nch + Nch MOSFET QS8K12  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (1) (2) (3) (4) Abbreviated symbol : K12

Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET QS8K13  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13

Contextual Info: Data Sheet 4V Drive Nch + Nch MOSFET MP6K13  Structure Silicon N-channel MOSFET  Dimensions Unit : mm MPT6 (Duel) Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive). (6) (5) (4) (1) (2) (3)  Application