2 GHZ LNA Search Results

C5023

Abstract: ZQ50A
Contextual Info: 1 wrm HEW LETT 1 LEM PA C K A R D 23 GHz LNA 2 1 .2 -2 6 .5 GHz Technical Data HMMC-5023 Features • Frequency Range: 21.2-23.6 GHz and 24.5-26.5 GHz Specified 21-30 GHz Performance • Low Noise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical

HMMC-5023

Abstract: 74x244
Contextual Info: What H E W L E T T * mLliMPACKARD 23 GHz LNA 21.2-26.5 GHz Technical Data HMMC-5023 Features • Frequency Range: 2 1 .2 -2 3 .6GHz and 2 4 .5 -2 6 .5 GHz Specified 2 1 -3 0 GHz Performance • Low N oise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical

Contextual Info: ASL19D High Gain, Low Noise Amplifier Features Description 24.5 dB Gain at 2 GHz 36 dBm OIP3 at 2 GHz 19 dBm P1dB at 2 GHz 0.95 dB NF at 2 GHz Two-stage LNA ASL19D is a two-stage LNA, which has a low noise, high gain, and high linearity over a wide

Ablebond 71

Abstract: Ablebond 190
Contextual Info: • 2 2 1 HEWLETT' ëSE M PACKARD 23 GHz LNA 21.2-26.5 GHz Technical Data HMMC-5023 Features • Frequency Rajige: 21.2-23.6 GHz and 24.5-26.5 GHz Specified 21-30 GHz Performance • Low Noise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical

mixer lnb

Contextual Info: MILLIMETER-WAVE SUBSYSTEMS LNB SERIES Block Up/Downconversion of Millimeter-Wave 26–40 GHz and Microwave (2–16 GHz) Bands HIGHPASS FILTER LNA MIXER ATTENUATOR IF AMP 26 – 40 GHz 2 – 16 GHz ATTENUATOR x3 10 MHz LO LO AMPLIFIER SYS SERIES Miniature Up/Downconverter

417-116

Abstract: 2SC5509 NE663M04 NE663M04-T2-A S21E
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz

ca 9088

Abstract: 2SC5509 NE663M04 NE663M04-T2 S21E transistor c 6093
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz

Contextual Info: Wireless LAN Front-End for 802.11a,b,g,n Single Dual-Band PC Applications Part numbers link to product information D 5 GHz Rx Diplexer LNA E 2 GHz Rx LNA A Switch SPDT or Diversity F C B Diplexer 5 GHz Tx PA G 2 GHz Tx PA C Switches Switches A AS236-321LF

Contextual Info: HMC-C022 v03.0512 WIDEBAND LNA MODULE 2 - 20 GHz Features Amplifiers - Connectorized Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications

9088 cb

Abstract: 4576 0637
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES_ • HIGH GAIN BANDW IDTH: f t = 17 GHz • HIGH POWER GAIN: IS2 1 EI2 = 11 dB TYP at 2 GHz . LOW NOISE FIGURE: NF = 1 2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz

Contextual Info: HMC-C022 v03.0512 WIDEBAND LNA MODULE 2 - 20 GHz Features Amplifiers - ConneCtorized noise figure: 2 dB @ 8 GHz flat Gain: 14 dB ± 0.5 dB p1dB output power: +18 dBm @ 8 GHz spurious-free operation regulated supply and Bias sequencing Typical Applications

pin diagram for IC 7476

Abstract: marking 724 diode sot-363 datasheet and pin diagram of IC 7476 7476 marking 259 sot363 7476 data sheet 7476 datasheet FF200 ic 7294 R5 SOT363
Contextual Info: BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 4 5
Multifunctional casc. 50  block LNA / MIX 6
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 3 2 IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA)

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA425 in SIEGET 25-Technology Preliminary Data # # # # # # # Multifunctional Case. 50 D. Block LNA/MIX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2 = 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V,lD=9.5mA)

Contextual Info: PRELIMINARY DATASHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES HIGH GAIN BANDW IDTH: f t = 17 GHz HIGH POWER GAIN: IS2 1 EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1 2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE:

Contextual Info: HMC-C002 v05.0512 WIDEBAND LNA MODULE 2 - 20 GHz Features Amplifiers - Connectorized Noise Figure: 2 dB @ 8 GHz Flat Gain: 13 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz 50 Ohm Matched Input/Output Regulated Supply and Bias Sequencing Typical Applications

Contextual Info: HMC-C022 v01.0906 WIDEBAND LNA MODULE, 2 - 20 GHz 1 Features AMPLIFIERS Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications Hermetically Sealed Module

c022

Abstract: RF LNA 10 GHz HMC-C022
Contextual Info: HMC-C022 v02.1007 WIDEBAND LNA MODULE, 2 - 20 GHz 9 Features CONNECTORIZED MODULES - AMPLIFIERS Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications

Contextual Info: HMC-C022 v00.1005 WIDEBAND LNA MODULE, 2 - 20 GHz 16 Features AMPLIFIERS - CONNECTORIZED MODULES Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications

RF LNA 10 GHz

Abstract: HMC-C022 LNA at 15 GHZ
Contextual Info: HMC-C022 v00.1005 WIDEBAND LNA MODULE, 2 - 20 GHz 9 Features AMPLIFIERS - CONNECTORIZED MODULES Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications

Contextual Info: SILICON TRANSISTOR NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz • •

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

pin diagram for IC 7476

Abstract: datasheet and pin diagram of IC 7476 IC 7476 datasheet ic 7476 pin diagram 7476 data sheet sot 23-5 marking code CO2 IC 7476 transistor bf 425 VPS05605 7476
Contextual Info: BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Preliminary data • Multifunctional casc. 50 Ω block LNA / MIX 4 • Unconditionally stable • Gain |S21|2 = 18.5 dB at 1.8 GHz (appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (appl.2) 2 IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA)

HMC-C002

Contextual Info: HMC-C002 v03.1007 WIDEBAND LNA MODULE, 2 - 20 GHz 9 Features CONNECTORIZED MODULES - AMPLIFIERS Noise Figure: 2 dB @ 8 GHz Flat Gain: 13 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz 50 Ohm Matched Input/Output Regulated Supply and Bias Sequencing Typical Applications

HMC-C001

Contextual Info: HMC-C001 v00.0904 WIDEBAND LNA MODULE, 2 - 20 GHz AMPLIFIERS - CONNECTORIZED MODULES 9 Features Noise Figure: 2 dB @ 10 GHz Flat Gain: 15 dB ± 0.5 dB P1dB Output Power: +14 dBm @ 10 GHz 50 Ohm Matched Input/Output Regulated Supply + 9V to +15V @ 65mA Typical Applications