2 AMP SILICON RECTIFIER Search Results

CMSH2-60

Abstract: schottky diode SMB marking code 120 CMSH2-100 CMSH2-20 CMSH2-40 CS220 TR13
Contextual Info: CMSH2-20 CMSH2-40 CMSH2-60 CMSH2-100 SURFACE MOUNT SILICON SCHOTTKY RECTIFIER 2 AMP, 20 THRU 100 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH2-20 Series 2.0 Amp Surface Mount Silicon Schottky Rectifier is a high quality, well constructed, highly reliable

Contextual Info: CMR2-02 CMR2-04 CMR2-06 CMR2-10 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER 2 AMP, 200 THRU 1000 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMR2-02 Series 2.0 Amp Surface Mount Silicon Rectifier is a high quality, well constructed, highly reliable component

C206

Abstract: C210 C202 C204 CMR2-02 CMR2-04 CMR2-06 CMR2-10 TR13 GENERAL SEMICONDUCTOR MARKING SMB
Contextual Info: CMR2-02 CMR2-04 CMR2-06 CMR2-10 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER 2 AMP, 200 THRU 1000 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMR2-02 Series 2.0 Amp Surface Mount Silicon Rectifier is a high quality, well constructed, highly reliable component

CMSH2-100M

Abstract: CMSH2-20M CMSH2-40M CMSH2-60M TR13 CS260
Contextual Info: CMSH2-20M CMSH2-40M CMSH2-60M CMSH2-100M w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY RECTIFIER 2 AMP, 20 THRU 100 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH2-20M Series 2.0 Amp Surface Mount Silicon Schottky Rectifier is a high quality, well constructed, highly

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE

SHD675112

Abstract: SHD675112B
Contextual Info: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD675052 SHD675052A SHD675052B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE

SHD675052

Abstract: SHD675052B
Contextual Info: SENSITRON SEMICONDUCTOR SHD675052 SHD675052B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE FEATURES:

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD675052 SHD675052B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE FEATURES:

silicon carbide

Contextual Info: SENSITRON SEMICONDUCTOR SHD675052 SHD675052B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE FEATURES:

scr 20 amp

Abstract: scr 20a NTE5514 NTE5515 Diode 400V 20A NTE5516
Contextual Info: NTE5514 thru NTE5516 Silicon Controlled Rectifier SCR 20 Amp, 1/2” Press Fit Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5518

Abstract: NTE5517 NTE5519
Contextual Info: NTE5517 thru NTE5519 Silicon Controlled Rectifier SCR 35 Amp, 1/2” Press Fit Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

transistor working principle

Abstract: NTE6082
Contextual Info: NTE6082 Silicon Schottky Barrier Rectifier 60V, 16 Amp, 2−Lead TO220 Description: The NTE6082 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardiring for Stress Protection D Low Forward Voltage

diode schottky 1000V 10a

Abstract: 20A SCHOTTKY BARRIER RECTIFIER NTE6080 diode 1000V 20a Schottky diode TO220
Contextual Info: NTE6080 Silicon Schottky Barrier Rectifier 60V, 10 Amp, 2−Lead TO220 Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guard−Ring for Stress Protection D Low Forward Voltage

thyristor SCR 406

Abstract: marking 4n thyristor 406 CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 4B2 rectifier CS202-4B
Contextual Info: Central CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 TM Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications

silicon carbide

Contextual Info: SHD687182 SENSITRON SEMICONDUCTOR DATA SHEET 5349, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 2 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC SMD 0.2 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES  NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

Contextual Info: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 Available 2 AMP TO 4 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon

Contextual Info: SENSITRON SEMICONDUCTOR SHD687182 DATA SHEET 5349, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 2 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC SMD 0.2 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES  NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

Microsemi micronote series 050

Contextual Info: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 2 Amp To 4 Amp Standard Recovery Rectifiers Available DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon

Microsemi micronote series 050

Contextual Info: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 Available 2 AMP TO 4 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon

TA31103

Abstract: ta31103f TA31103FN DRC3 TOSHIBA COMPRESSOR 60 HZ TA3110
Contextual Info: TOSHIBA TA31103F#TA31103FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 3 1 1 0 3 F, SILICON MONOLITHIC T A 3 1 1 0 3 FN COMPANDER IC FOR CORDLESS TELEPHONE FEATURES • Noise reduction IC, compressor and expander on a chip • 2 buffer amp. for filter, MIC AMP, receiver amp. and PRE

MCR846

Abstract: MCR846-1
Contextual Info: MCR846 series SILICON Silicon controlled rectifiers for low-power switching and control applications requiring blocking to 2CI0 volts and load currents to 2 amp. PIN ». CATHODE 2. GATE . STUO ANODE CASE 63 M A X IM U M R A T IN G S (T j = 1 0 5 'C u n le ss otherw ise noted)

CMSH2-20L

Abstract: CMSH2-40L TR13
Contextual Info: CMSH2-20L CMSH2-40L w w w. c e n t r a l s e m i . c o m SURFACE MOUNT LOW VF SILICON SCHOTTKY RECTIFIER 2 AMP, 20 AND 40 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH2-20L Series 2.0 Amp Surface Mount Low VF Schottky Rectifier is a high quality, well constructed, highly