1SS398 Search Results

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

Contextual Info: TO SH IB A 1SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE 1SS398 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage : V f = 1.0V Typ. High Voltage : V r = 400V (Min.) Unit in mm + 0.5 2.5 -0 .3 + 0.25 1 .5 -0 .1 5 Fast Reverse Recovery Time ; trr = 0.5^s (Typ.)

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High-Voltage, High-Speed Switching Applications z Low forward voltage: Unit: mm VF = 1.0 V typ. @ IF = 100 mA z Fast reverse recovery time: trr = 0.5 s (typ.) z Small total capacitance: CT = 2.5 pF (typ.)

1SS398GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 1SS398GP SURFACE MOUNT SWITCHING DIODE VOLTAGE 400 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed and fast reverse recovery time: Trr<0.5uSec * Suitable for high packing density.

Contextual Info: 1SS398 TO SHIBA 1SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp= 1.0V Typ. : VR = 400V (Min.)

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance

1SS398

Contextual Info: TOSHIBA 1SS398 1 SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package VF = 1.0V Typ. V r = 400V (Min.)

marking 8D SOT 89

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 1SS398PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 400 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346 * High speed and fast reverse recovery time: Trr<0.5uSec

1SS398

Contextual Info: 1SS398 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS398 ○ 高電圧スイッチング用 z z z z 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm : VF = 1.0 V 標準 @ IF = 100 mA

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High-Voltage, High-Speed Switching Applications z Low forward voltage: Unit: mm VF = 1.0 V typ. @ IF = 100 mA z Fast reverse recovery time: trr = 0.5 s (typ.) z Small total capacitance: CT = 2.5 pF (typ.)

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance

marking 8d

Abstract: 1SS398PT 1p sot23
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 1SS398PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 400 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed and fast reverse recovery time: Trr<0.5uSec * Suitable for high packing density.

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

CHN222

Abstract: CH228K marking wa sot-23 SOT-23 marking a8 CHN11 chn22 CHBD2004 CHN202U sot-23 MARKING A7 CHN217
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Maximum Maximum Peak Average Reverse Rectified Voltage Current IO PRV VPK mAAV Maximum Reverse Current @ 25°C TA Maximum Forward Peak Surge Current @ 1S IFM Surge APK IR uAdc VR V 0.5(1S) 1(10mS)

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

wa sot23

Abstract: BAV99TPT 1SS355PT CHBD2004SPT CHP202UPT CH204UPT SOT 23 A7 diode 5d sot 23 CHN202UPT Diode SOT-23 marking JE
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード