1SS387 Search Results

Contextual Info: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm z Compact 2-pin package – ideal for high-density mounting z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS387 Features • • • • • • • Halogen free available upon request by adding suffix "-HF" High speed switching diode

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-523 Package Weight mg 2 Product Group Type No. RB751S-40 1SS389 1SS388 BAT54X RB520S-30 RB521S-30 1SS387 1SS400 1SS422 BAS16X NSD914X BAS516 BZX584C2V0 – BZX584C51

Contextual Info: 1SS387 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  Silicon Epitaxial Planar Die Construction   Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications

1SS387

Contextual Info: 1SS387 High Speed Switching Diodes SOD-523 Features — Low forward voltage. — Fast reverse recovery time. — Small total capacitance. Applications — Dimensions in inches and millimeters High-speed switching in surface mounted circuits. Ordering Information

1SS387

Abstract: SOD523
Contextual Info: BL Galaxy Electrical Production specification High Speed Switching Diode FEATURES 1SS387 Pb z Low forward voltage. z Fast reverse recovery time. z Small total capacitance. Lead-free APPLICATIONS z High-speed switching in surface mounted circuits. SOD-523 ORDERING INFORMATION

1SS387

Contextual Info: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm z Compact 2-pin package – ideal for high-density mounting z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)

1SS387

Contextual Info: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)

Contextual Info: Product specification 1SS387 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :VF 3 = 0.98V(TYP.) Fast Forward Voltage :trr = 1.6ns(TYP.) 0.77max :CT = 0.5pF(TY +0.05 0.1-0.02 0.07max

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed Switching Diode SOD-523 FEATURES Small package MARKING: G Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit

Contextual Info: 1SS387CT Switching Diodes Silicon Epitaxial Planar 1SS387CT 1. Applications • Ultra-High-Speed Switching 2. Features 1 Small package (2) Low forward voltage: VF(3) = 0.98 V (typ.) (3) Fast reverse recovery time: trr = 1.6 ns (typ.) (4) Small total capacitance: Ct = 0.5 pF (typ.)

1SS387

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed SWITCHING Diodes FEATURES Small package Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Peak reverse voltage

Contextual Info: 1SS387FN2 SURFACE MOUNT SWITCHING DIODES VOLTAGE 200mWatts POWER 80 Volts Unit : inch mm DFN 2L FEATURES Fast switching Speed. Electrically ldentical to Standerd JEDEC Surface Mount Package ldeally Suited for Automatic lnsertion. In compliance with EU RoHS 2002/95/EC directives

1SS387

Abstract: 030619EAA
Contextual Info: 1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm Compact 2-pin package – ideal for high-density mounting Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS387 Features • • • • • • High speed switching diode 85 Volts Switching Diode Surface mount package

1SS387

Abstract: 1-1G1A
Contextual Info: 1SS387 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS387 ○ 超高速スイッチング用 z z z z 単位: mm 2 端子小型外囲器なので､高密度実装に最適です。 順方向特性が良い。 : VF 3 = 0.98V (標準)

1SS387CT

Contextual Info: 1SS387CT TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387CT Ultra High Speed Switching Application Fast reverse recovery time: trr = 1.6 ns typ. CT = 0.5 pF (typ.) +0.02 0.38 -0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

1SS387

Contextual Info: 1SS387 1SS387 High Speed SWITCHING Diodes 1.20 FEATURES Small package 0.80 0.30 1.60 0.10 0.65 SOD-523 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 85 V DC reverse voltage VR 80

Contextual Info: 1SS387 High Speed Switching Diodes * “G” Lead Pb -Free SWITCHING DIODE 100 mAMPERES 80 VOLTS Features: *Extremely High Switching Speed. *Low Reverse Leakage Current. *High Reliability. *Small Outline Surface Mount SOD-523 Package. Applications: *High Speed Switching.

1SS387

Abstract: SOD-523 MARKING C SOD523 MARKING G SOD523
Contextual Info: 1SS387 High Speed Switching Diodes SWITCHING DIODE 100 mAMPERES 80 VOLTS P b Lead Pb -Free Features: *Extremely High Switching Speed. *Low Reverse Leakage Current. *High Reliability. *Small Outline Surface Mount SOD-523 Package. 1 2 Applications: *High Speed Switching.

Contextual Info: 1SS387FN2 SURFACE MOUNT SWITCHING DIODES VOLTAGE 200mWatts POWER 80 Volts DFN 2L Unit：inch mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) Fast switching Speed. Electrically ldentical to Standerd JEDEC Surface Mount Package ldeally Suited for Automatic lnsertion.

marking C1

Abstract: 1SS387 maxim package marking
Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS387 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :VF 3 = 0.98V(TYP.) Fast Forward Voltage :trr = 1.6ns(TYP.) 0.77max :CT = 0.5pF(TY

Contextual Info: 1SS387CT スイッチングダイオード シリコンエピタキシャルプレーナ形 1SS387CT 1. 用途 • 超高速スイッチング用 2. 特長 1 パッケージが小さい。 (2) 順電圧が小さい。: VF(3) = 0.98 V (標準) (3) 逆回復時間が短い。 : trr = 1.6 ns (標準)

Contextual Info: 1SS387CT Switching Diodes Silicon Epitaxial Planar 1SS387CT 1. Applications • Ultra-High-Speed Switching 2. Features 1 Small package (2) Low forward voltage: VF(3) = 0.98 V (typ.) (3) Fast reverse recovery time: trr = 1.6 ns (typ.) (4) Small total capacitance: Ct = 0.5 pF (typ.)