1SS133 DIODE Search Results

1SS133 T77

Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

1SS133

Abstract: do-34 rohm
Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

1SS133

Contextual Info: K /D io d es 1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 y U □ > l v 7 f K Silicon Epitaxial Planar High-Speed Switching Diodes • W KTfSIH /Dim ensions Unit : mm 1) S / J 'S » T * S o 2) M i t m & T & Z ' . 3) itS lJ t (trr=2ns Typ.) ? & 5 o

1SS133

Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 90 V CURRENT: 0.2 A FEATURES DO - 34 GLASS Glass sealed envelope. (MSD) VRM=250V guaranteed High reliability MECHANICAL DATA Case: DO-34, glass case Polarity: Color band denotes cathode

DIODE 1SS133

Abstract: 1SS133 1ss133 diode diode
Contextual Info: Diodes High–speed switching diode 1SS133 FApplications High speed switching FExternal dimensions Units: mm FFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (typical recovery time = 1.5ns) FConstruction Silicon epitaxial planar

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

1SS133

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

1SS133

Abstract: DIODE 1SS133
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode 1SS133 . 300mW DO-34 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V) IFM(mA)

1SS133

Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE DO - 34 Glass FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode

Contextual Info: 1SS133 SWITCHING DIODES 80 Volt VOLTAGE POWER 300 mWatt FEATURES • Fast switching Speed. • Electrically ldentical to Standerd JEDEC • High Conductance • Axial lead Package ldeally Suited for Automatic lnsertion. • Lead free in compliance with EU RoHS 2011/65/EU directive

1SS133

Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope • High speed Max. 0.5 Max. 0.45 • High reliability Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band Black Part No. XXX Max. 2.9 XXX Max. 3.9 ST

Contextual Info: SMALL SIGNAL SWITCHING DIODE YIGUANG 1SS133 1.Dimensions of outlines Unit: mm DO-35 2.Maximum Ratings TYPE NUMBER Symbols Reverse Voltage VR Peak Reverse Voltage VRM V 40 IO mA 110 IFSM A 0.5 Average rectified current, Half wave rectification with Resistive load at TA=25

1S1555

Abstract: 1S1553 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555 1SS133 1N4148 1SS176
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N4148 1S SERIES 1SS SERIES SWITCHING DIODES 1. SWITCHING DIODES ABSOLUTE MAXIMUM RATINGS TYPE V RM V 1N4148 100 1S1553 70 1S1555 35 1SS133 90 1SS176 35 1SS270 30 V R (V) IF(mA) IO(mA) I FS(mA)1 Sec P(mw) 75 60 30 80 30 30 450 300

1ss130

Contextual Info: 1SS130/1SS131 /1 SS132/1SS133/1SS134 $ -4 % — K /D iod es 1SSI 30/1 SSI 31/1SS132/ ISSI 33/1 SSI 34 K Silicon Epitaxial Planar High-Speed Switching-Diodes • 1 * - 7 ^ 1 f i t ? * * 0/Dim ensions Unit : mm) (JEDEC : DO- 34)» 2) M U M T 'fo Z o 3) ft& J K (trr=1.5nsTyp.)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS133 Features • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS133 Features • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS133 Features • • • • Glass sealed envelope. MSD High speed. (trr=1.2ns Typ) High reliability.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS133 Features • • • • • Glass sealed envelope. High speed. trr=1.2ns Typ High reliability. Silicon epitaxial planar

Contextual Info: Diode, switching, leaded 15 5 131 1 5 5 132 15 5 133 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. They have a high switching speed. The reverse recovery time (trr is typically 1.5 ns.) Dimensions (Units : mm)

panasonic inverter 707 manual

Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
Contextual Info: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change

BAS316 equivalent

Abstract: Zener Diodes 300v BAS16-03W BAS125 BAS40 equivalent bav20 BAS316 / BAS16-03W 1SS376 bas16 cross reference 1PS301
Contextual Info: Philips Semiconductors Small-signal Transitors and Diodes Cross Reference Diodes PHILIPS GA DIODES CROSS-REFERENCE Schottky diodes COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER COMPETITOR TYPE-NUMBER PHILIPS TYPE-NUMBER BAS125 BAT54 BAS70-06W BAS125-04 BAT54S

DIODE S4 29

Contextual Info: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,

1SS134 ROHM

Abstract: ROHM 1SS292 1SS139
Contextual Info: $ < K /D io d es M 3 . -f y ^ > *7 $ - i $ — K /S w itc h in g Diodes • S & J f X 'f K /H ig h - S p e e d S w itching Diodes m Type B E S S IE Vr V i1 EE Cond. V f (V) Max. I f (mA) Package Page 1S2471 80 1.2 100 D O -35/S C -40 1187 1S2472 50 1.2 100