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1P18U1/10
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Altech
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BUSBAR1 PHASE TYPE 10LUGS UL/CUL |
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PDF
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20.41MB |
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1P18U1/12
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Altech
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BUSBAR1 PHASE TYPE 12 LUGS UL/CU |
Original |
PDF
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20.41MB |
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1P18U1/2
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Altech
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BUSBAR1 PHASE TYPE 2 LUGS UL/CUL |
Original |
PDF
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20.41MB |
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1P18U1/3
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Altech
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BUSBAR1 PHASE TYPE 3 LUGS UL/CUL |
Original |
PDF
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20.41MB |
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1P18U1/4
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Altech
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BUSBAR1 PHASE TYPE 4 LUGS UL/CUL |
Original |
PDF
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20.41MB |
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1P18U1/5
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Altech
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BUSBAR1 PHASE TYPE 5 LUGS UL/CUL |
Original |
PDF
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20.41MB |
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1P18U1/6
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Altech
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BUSBAR1 PHASE TYPE 6 LUGS UL/CUL |
Original |
PDF
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20.41MB |
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1P18U1/7
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Altech
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BUSBAR1 PHASE TYPE 7 LUGS UL/CUL |
Original |
PDF
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20.41MB |
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1P18U1/8
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Altech
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BUSBAR1 PHASE TYPE 8 LUGS UL/CUL |
Original |
PDF
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20.41MB |
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1P18U1/9
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Altech
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BUSBAR1 PHASE TYPE 9 LUGS UL/CUL |
Original |
PDF
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20.41MB |
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AK01P18D
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AK Semiconductor
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AK01P18D P-Channel Enhancement Mode Power MOSFET with -100V drain-source voltage, -18A continuous drain current, and 85mΩ typical RDS(ON) at VGS=-10V, utilizing advanced trench technology for low on-resistance and high cell density. |
Original |
PDF
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AK01P18
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK01P18 with -100V drain-source voltage, -18A continuous drain current, and low on-resistance of 85mΩ typical at VGS=-10V, featuring advanced trench technology for high efficiency in power management applications. |
Original |
PDF
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AK01P18L
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK01P18L with -100V drain-source voltage, -18A continuous drain current, RDS(ON) less than 100mΩ at VGS=-10V, advanced trench technology, and low gate charge for high efficiency power management applications. |
Original |
PDF
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AK01P18D
