1N6640 Search Results

1N6639

Abstract: 1N6638 melf diode D-5D 1N6641
Contextual Info: 1N6638/U 1N6639/U 1N6640/U 1N6641/U 1N6642/U 1N6643/U SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. A SIGNAL OR COMPUTER DIODE 1N6638 THRU 1N6643 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Upscreen to JANTX, JANTXV per MIL-PRF-19500/578,609 available

SEMELAB

Abstract: LE17 MIL-PRF19500 QR217 1n6640
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6640D2A / 1N6640D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”A-MELF” Package. Suitable for general purpose, switching applications.

melf diode D-5D

Abstract: 1N6638 1N6638U 1N6640 1N6640U 1N6642
Contextual Info: 1N6638/ U/ US 1N6640/ US 1N6642/ U/ US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. B SJ SX SV SIGNAL OR COMPUTER DIODE 1N6638, 1N6640, 1N6642 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Manufacture & screen to TX/TXV/JANS per MIL-PRF-19500/578,609 using Sensitron

Contextual Info: 1N6640+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.1

glass diode marking 2U

Abstract: 37sn 1N6640US 6643U 2U 73 diode marking 2U diode 1N6641
Contextual Info: H M mm Sania Ana, CA ic n o m s e m 1N6639 1N6640 1N6641 i FEATURES Available in axial leaded and surface mount configurations 300mAmp 75-100 Volts 4nsec Computer Switching Diode Ultra Fast Reverse Recovery Time Very low Capacitance Metallurgical^ Bonded Non-cavity glass package

1N6640US JANTXV

Abstract: in6639us
Contextual Info: •1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 >SWITCHING DIODES 1N6639US 1N6640US 1N6641US • NON-CAVITY GLASS PACKAGE ■METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6640U01D

Abstract: 1N6640U02D escc 1N6640U 40UD1
Contextual Info: 1N6640U Aerospace 0.3 A - 75 V switching diode Features K A • Surface mount hermetic package ■ High thermal conductivity materials ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop

Contextual Info: 1N6640U Aerospace 0.3 A - 75 V switching diode Features K A • Surface mount hermetic package ■ High thermal conductivity materials ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop

1N6641

Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6640D2A / 1N6640D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”A-MELF” Package. Suitable for general purpose, switching applications.

1N6640US

Abstract: 1N6641 1N6640 JANTX 1N6640US JANS 1N6639 JANTXV 1N4150 1N6639 1N6639US 1N6640 1N6641US
Contextual Info: 1N6639 1N6640 1N6641 FEATURES • Available in axial leaded and surface mount configurations • Ultra Fast Reverse Recovery Time • Very low Capacitance • Metallurgically Bonded • Non-cavity glass package • Available as JANTX, JANTXV and JANS per MIL-S-19500/609

1N6639US

Abstract: 1N6640US 1N6641US
Contextual Info: • 1N6639US THRU 1N6641US AVAILABLE IN JAN, PER MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US JANTX, JANTXV AND JANS • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

Contextual Info: 1N6640U Aerospace 0.3 A - 75 V switching diode Features K A • Surface mount hermetic package ■ High thermal conductivity materials ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop

1N4450

Abstract: BKC Semiconductors DSAIH0002560 1N6641
Contextual Info: Silicon Switching Diodes Use Advantages 1 1N6639 1N6640 1N6641 DO-35 Hard Glass Package High Rel. Voidless General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power, less robust types like 1N4150-1 and 1N4450-1.

1N6641

Abstract: 1N4150-1 1N6639 1N6640 BKC Semiconductors
Contextual Info: 1N6639 1N6640 1N6641 Silicon Switching Diodes Use Advantages DO-35 Hard Glass Package High Rel. Voidless General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power, less robust types like 1N4150-1 and 1N445Q-1.

Contextual Info: 1N6640+JANS Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.1

1N6641

Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

1N6640 equivalent

Abstract: 1N6640 1N6641
Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

1N6641

Contextual Info: 1N6639 • 1N6639 thru 1N6641AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/609 1N6640 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE 1N6641 • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6640U01D

Contextual Info: 1N6640U Aerospace 0.3 A - 75 V switching diode Datasheet - production data Description Packaged in LCC2D this device intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and other aerospace applications. K A K A Leadless chip carrier 2 LCC2D

1N6640

Abstract: 1N6641 1n6641a 1N6639
Contextual Info: 1N6639 • 1N6639 thru 1N6641AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/609 1N6640 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE 1N6641 • METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C

1N6639

Abstract: microsemi 1n6642 1N5806 microsemi 1N3595 1N5615 1N5616 1N5802 1N5804 1N5806 1N6638
Contextual Info: Winter 1997-1998 New Additions to ESA QPL Microsemi Ireland is pleased to announce the following additions to its ESA Qualified parts list: 1N3595; 1N6639; 1N6642; 1N6638 1N6640 1N6643 Please send all RFQ enquiries to Siobhan Dolan sdolan@msc-ireland.ie. The Ennis facility continues to work on the

1N6641

Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

1N6641

Contextual Info: • 1N6639 thru 1N6641AVAILABLE INJAN, PER MIL-PRF-19500/609 1N6639 JANTX, JANTXV, AND JANS 1N6640 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE 1N6641 • METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C