1N5822 ST Search Results

DIODE 1N5822

Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5821

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822RL

Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: • 1N5822 AVAILABLE IN JAN. JANTX. JANTXV AND JANS 1N5822 and • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED DSB5820 thru DSB5822 and • METALLURGICALLY BONDED DSB3A20 thru DSB3A40 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +125°C

1N5822 JANTX

Abstract: 1N5822 JANTXV 000D 1N5822 DSB3A20 DSB3A30 DSB3A40 DSB5820 DSB5821 DSB5822
Contextual Info: • 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N5822 and • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED DSB5820 thru DSB5822 and • DOUBLE PLUG CONSTRUCTION DSB3A20 thru DSB3A40 MAXIMUM RATINGS Operating Temperature: -65°C to +125°C

Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2

1N5820

Abstract: 1N5821 1N5822 diode schottky 1N5822
Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2

MBR140P

Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
Contextual Info: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT

1N5821

Abstract: 1N5820 1N5822
Contextual Info: 1N5820 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5822 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capabitity

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Ampere FEATURES DO-201AD Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction

1N5820

Abstract: 1N5821 1N5822
Contextual Info: CE 1N5820 THRU 1N5822 CHENYI ELECTRONICS SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0Ampere FEATURES . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 . Metal sliicon junction ,majority carriet conduction

1N5821

Abstract: 1N5822 data sheet 1N5820 1N5822
Contextual Info: 1N5820 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5822 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capabitity

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction

1N5820

Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes FEATURES DO-201AD ◆Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆Metal silicon junction,majority carrier conduction

Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5820 thru 1N5822 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 40V Forward Current 3.0A Flammability Classification 94V-0 Low power loss,high efficiency

Contextual Info: 1N5820 THRU 1N5822 3.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 40 Volts CURRENT FEATURES 3.0 Ampere * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction DO-201AD .220 5.6

1N5820

Abstract: 1N5821 1N5822
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5820 thru 1N5822 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 40V Forward Current 3.0A Flammability Classification 94V-0 Low power loss,high efficiency

Contextual Info: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES 1.0 25.4 MIN. * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction

1N5820

Contextual Info: 1N5820 thru 1N5822 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifier DO-201AD Reverse Voltage 20 to 40V Forward Current 3.0A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency

FULL WAVE bridge RECTIFIER CIRCUITS

Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
Contextual Info: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,

Contextual Info: LITE-ON SEMICONDUCTOR 1N5820 thru 1N5822 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 3.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability