1N5822 ST Search Results

DIODE 1N5822

Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822

Abstract: 1N5820 1N5821
Contextual Info: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifier Diodes Schottky-Barrier-Gleichrichterdioden Version 2010-06-01 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-201 Weight approx. Gewicht ca. 1g

1N5821

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1NB5820 . 1N5822 1NB5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-04-19 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 7.5 ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0

half bridge LLC inverter

Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822RL

Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822

Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822 PACKAGE

Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5820

Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822

Abstract: 1N5820
Contextual Info: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2010-06-01 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0

1n5822

Abstract: A115A 1N5820
Contextual Info: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2010-03-30 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0

1N5822 JANTX

Abstract: 1N5822 D-5B 1N5822 data sheet JANTX, JX, JAN, Schottky 1N5822 DSB3A20 DSB3A30 DSB3A40 DSB5820 DSB5821
Contextual Info: • 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/620 1N5822 and • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED DSB5820 thru DSB5822 and • METALLURGICALLY BONDED DSB3A20 thru DSB3A40 MAXIMUM RATINGS 0.115/0.145 2.92/3.68

1N5820

Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

58221

Contextual Info: • 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N5822 and • 3 AMP SCHOTTKY BARRIER RECTIFIERS DSB5820 thru DSB5822 • HERMETICALLY SEALED and • METALLURGICALLY BONDED DSB3A20 thru DSB3A40 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +125°C

1N5822

Abstract: 1N5822 201 1N5822 data sheet 1N5820 1N5821
Contextual Info: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2008-01-22 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 7.5 ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0

Contextual Info: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-07-04 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 7.5 ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0

JANTX, JX, JAN, Schottky

Abstract: 1N5822 D-5B 1N5822 JANTX 1N5822 DSB3A20 DSB3A30 DSB3A40 DSB5820 DSB5821 DSB5822
Contextual Info: • 1N5822 AVAILABLE IN JAN, PER MIL-PRF-19500/620 JANTX, JANTXV AND JANS 1N5822 and • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED DSB5820 thru DSB5822 and • METALLURGICALLY BONDED DSB3A20 thru DSB3A40 MAXIMUM RATINGS 0.115/0.145 2.92/3.68

Contextual Info: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers

Contextual Info: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers

Contextual Info: 1N5822 1N5822 AVAILABLE IN JANTX AND JANTXV and 3 AMP SCHOTTKY BARRIER RECTIFIERS DSB5820 thru DSB5822 HERMETICALLY SEALED and METALLURGICALLY BONDED DSB3A20 thru DSB3A40 DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ope; ating Tem perature: -65“ C to +125 C

1NS820

Contextual Info: 1N5820 1N5821 1N5822 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1NS820 and 1N5822 are Designer’s Data Sheet Motorola Preferred Devices A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide