1N5811 E Search Results

1N5811

Contextual Info: 1N5811 RECTIFIERS HIGH EFFICIENCY - ESP - 2.5 AMP TO 20 AMP 6.21 Diodes . Page 1 of 1 Enter Your Part # Home Part Number: 1N5811 Online Store 1N5811 Diodes RECTIFIERS HIGH EFFICIENCY - ESP - 2.5 AMP TO 20 Transistors AMP Integrated Circuits Optoelectronics

1N5811

Contextual Info: 1N5811 a s ii SILICON RECTIFIER-VERY FAST SWITCHING DESCRIPTION: PACKAGE STYLE ASI- 420 The 1N5811 is Designed for General Purpose Very Fast Switching Applications. MAXIMUM RATINGS Io If = 6.0 A avg @ —l = 75 °C/ L = 3/8" ^ Rwm 150 V Tj -65 0C to +175 0C

Contextual Info: 1N5811 asi SILICON RECTIFIER-VERY FAST SWITCHING DESCRIPTION: PACKAGE STYLE A S I-420 The 1N5811 is Designed for General Purpose Very Fast Switching Applications. f 1 0 MIN - 2 5 .4 tao <4.6!. .m «.si MAXIMUM RATINGS lo If - 6.0 A (avg) @ Tl = 75 °C/ L = 3/8"

JANTXV1N5811US

Abstract: JANS1N5811US JANTX1N5811US JANS1N5811 SS5811US 1N5811US JANS sensitron jan1n58 1N5809 equivalent jan1n5811 1N5809US
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA A VAILABLE AS DATA SHEET 127, REV. H.4 JAN JANTX JANTXV JAN S JAN EQUIVALENT: SJ58xx/US*

in5806

Abstract: 1N5815 Diode IN5809 IN5802 1N5812 diode
Contextual Info: RECTIFIERS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 High Efficiency, ESP, 2.5 Amp to 20 Amp FEATURES • Exceptional Efficiency • Low Forward Voltage • Extremely Fast Reverse Recovery Time • Extremely Fast Forward Recovery Time • High Surge • Small Size

Contextual Info: 1N5807 thru 1N5811 Microsemi Corp. f The Otode ex p els SANTA ANA, CA ^☆JANSÍ SCOTTSDALE, A Z For more inform ation call: 714 979-8220 ULTRA FAST RECTIFIERS FEA TU R ES • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION

1N5807

Abstract: 1N5809 1N5811 JANTX 1N5811
Contextual Info: 1N5807 / US 1N5809 / US 1N5811 / US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 127, REV G JAN JANTX JANTXV SJ SX SV HIGH EFFICIENCY AXIAL LEAD RECTIFIERS DESCRIPTION: 50 / 100 / 150 VOLT, 3.0 AMP, 30 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS

JANTX 1N5811

Abstract: 1N5807 1N5809 1N5811 melf-b 1N5811 power rating JAN 1N5811
Contextual Info: JAN JANTX JANTXV SENSITRON SEMICONDUCTOR 1N5807 / US 1N5809 / US 1N5811 / US TECHNICAL DATA DATA SHEET 127, REV F HIGH EFFICIENTCY AXIAL LEAD RECTIFIERS DESCRIPTION: 50 / 100 / 150 VOLT, 3.0 AMP, 30 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS

Contextual Info: Rectifier Diode Chips Ultrafast Recovery CD5807, CD5809, CD5811 Features • Available as JANHCE and JANKCE per MIL-PRF-19500/477 • Electrically equivalent to 1N5807, 1N5809 and 1N5811 • Passivated junction • Compatible with all wire bonding and die attaché techniques

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com 1N5807 - 1N5811 IATF 0113686 SGS TH07/1033 ULTRAFAST RECOVERY RECTIFIER DIODES PRV : 50 - 150 Volts Io : 6.0 Amperes D2A FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current

1N5811

Abstract: 1N5807 1N5809
Contextual Info: Certificate : TH97/10561QM 1N5807 - 1N5811 Certificate : TW00/17276EM ULTRAFAST RECOVERY RECTIFIER DIODES PRV : 50 - 150 Volts Io : 6.0 Amperes D2A FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current

5807

Abstract: 1N5807
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA DATA SHEET 127, REV. H.5 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT *

1N5811US JANS sensitron

Abstract: SS5811US 1N5811 jan1n5811 1N5811 power rating
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA DATA SHEET 127, REV. H.4 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT *

Contextual Info: ] | ^ / 71i = - p r s r = a n n ll J v y ü T r L ^ l S L r n J RECTIFIER, up to 150V,6A,30ns January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE * 1N5807 1N5809 1N5811

LTS 5811 R

Contextual Info: 1N5807 thru 1N5811 'erosemi Corp. The dioöe etperts SANTA ANA, CA "☆ JA N S Í 7 7 fn \ For more information call: 714 9^9-8220 ULTRA FAST RECTIFIERS FEATURES • MICROM INIATURE PACKAGE • VOIOLESS HERMETICALLY SEALED G LASS PACKAGE • TRIPLE LAYER PASSIVATION

Contextual Info: Rectifier Diode Chips Ultrafast Recovery CD5807, CD5809, CD5811 Features • Available as JANHCE and JANKCE per MIL-PRF-19500/477 • Electrically equivalent to 1N5807, 1N5809 and 1N5811 • Passivated junction • Compatible with all wire bonding and die attach techniques

Contextual Info: DIGITRON SEMICONDUCTORS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS HIGH EFFICIENCY 2.5 AMP TO 20 AMP MAXIMUM RATINGS Peak Inverse Voltage 2.5 Amp Series 6 Amps Series 20 Amp Series 50V 1N5802 1N5807 1N5812 75V 1N5803 1N5808 1N5813 100V 1N5804 1N5809

1N5811

Contextual Info: 1N5811 SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE： ：150V CURRENT: 3.0A FEATURE G-4 Glass passivated Hermetically sealed package Low reverse current Soft recovery characteristics MECHANICAL DATA Case: G-4 sintered glass case Terminal: Plated axial leads solderable per

BKC Semiconductors

Contextual Info: 6 Amp Voidless Fast Switching Rectifiers 1N5807 thru 1N5811 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are ideal for use in aircraft or satellite power supplies.

JTX 1N5811

Abstract: 1N5807 1N5808 1N5809 1N5810 1N5811 FSM 12.5 BKC Semiconductors
Contextual Info: 6 Amp Voidless Fast Applications Switching Rectifiers 1N5807 thru 1N5811 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are idiai for use inaireraft or satellite power supplies. Checked items

1N5815 Diode

Abstract: diode 1N5815 diode IN5804 IN5804 1N5802-1N5806 diode 1N5813 DIODE 6 AMP 150V power diode with piv of 100v 6A, 100v fast recovery diode IN5812
Contextual Info: 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS High Efficiency, ESP, 2.5 Amp to 20 Amp FEATURES DESCRIPTION • • • • • • • • This series of High Efficiency Power Rectifiers allows circuit designers to design high current, high frequency sup­

SD5171

Abstract: IN6095 DSR3050 DSR3051 DSR3100 DSR5050 DSR5051 1N5809 equivalent 1N5810 diode diode 151
Contextual Info: OPTEK TECHNOLOGY INC 4&E D • L^úSflO 0001427 TTl ■ OTK FAST RECOVERY RECTIFIERS 1N5415-1N5420; 1N5615-1N5623; 1N5802-1N5811 T 03-15 Fast Recovery Rectifiers This series of high speed rectifiers are constructed using Optek's "double-slug" technique, a voidless monolithic construction which is

1N5811

Contextual Info: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5811 PACKAGE STYLE:304 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 150 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C

Contextual Info: 1N 5807 thru Micro/semi Corp. ^ 1N5811 MV ' Thp d io de ex p erts ☆JANSÍ SANTA A N A, CA F o r m o re in f o r m a ti o n call: 714 9 7 9 -8 2 2 0 ULTRA FAST RECTIFIERS FEATURES • M ICRO MINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE