1N5552 PACKAGE Search Results

1N5552 PACKAGE Result Highlights (5)

Part	Manufacturer	Description	Download
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)	Datasheet
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)	Datasheet

1N5552 PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1N5550 Abstract: 1N5551 1N5552 Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency	Original	1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 D-74025 28-Jan-03 1N5551 1N5552	PDF
1n5551 Abstract: 1n5552 Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency	Original	1N5550 1N5552 MIL-STD-750, 1N5551 1N5552 18-Jul-08	PDF
1N5552 package Abstract: 1N5550 1N5551 1N5552 Contextual Info: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes E D * FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package	Original	1N5550 1N5552 MIL-S-19500 50mVp-p 1N5552 package 1N5551 1N5552	PDF
1N5552 package Abstract: 1N5550 1N5551 1N5552 Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency	Original	1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 D-74025 11-Aug-04 1N5552 package 1N5551 1N5552	PDF
1N5552 package Abstract: 1N5550 1N5551 1N5552 Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency	Original	1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 08-Apr-05 1N5552 package 1N5551 1N5552	PDF
Contextual Info: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3 . 0 Amperes FEATURES ♦Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package	OCR Scan	1N5550 1N5552 MIL-S-19500 MIL-STD-750,	PDF
w1853 Contextual Info: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3 . 0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature m etallurgical^ bonded construction Hermetically sealed package	OCR Scan	1N5550 1N5552 MIL-S-19500 MIL-STD-750, w1853	PDF
Contextual Info: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature metallurgical^ bonded construction Hermetically sealed package	OCR Scan	1N5550 1N5552 MIL-S-19500	PDF
1N5550 Abstract: 1N5551 1N5552 Contextual Info: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes E D * FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package	Original	1N5550 1N5552 MIL-S-19500 50mVp-p 1N5551 1N5552	PDF
1N5552 package Abstract: 1N5552 Contextual Info: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5552 PACKAGE STYLE:301 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 600 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C	Original	1N5552 1N5552 package 1N5552	PDF
88518 Abstract: 1N5550 1N5552 package 1N5551 1N5552 Contextual Info: 1N5550 thru 1N5552 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d e t nFeatures e t a P Reverse Voltage 200 to 1000V Forward Current 3.0A • • •	Original	1N5550 1N5552 MIL-S-19500 MIL-STD-750, 50mVp-p 04-Dec-02 88518 1N5552 package 1N5551 1N5552	PDF
Contextual Info: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER V oltage - 2 0 0 to 600 Volts C u rre n t - 3 .0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature metallurgically bonded Hermetically sealed package Capable of meeting	OCR Scan	1N5550 1N5552 IL-STD-750 1N5554	PDF
1N5552 package Abstract: 1N5550 1N5551 1N5552 Contextual Info: 1N5550 THRU 1N5552 Glass Passivated Junction Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n e t Pa Features • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package	Original	1N5550 1N5552 MIL-S-19500 MIL-STD-750, 50mVp-p 1N5552 package 1N5551 1N5552	PDF
Contextual Info: B K C INTERNATIONAL 3DE D • 1 1 7 *n fl3 DGÜ03GS 7 ■ " " p O V O °j 1N5550 Series • General Purpose Rectifiers in “B” Body Package Type 1N5550 1N5551 1N5552 1N5553 1N5554 Peak Inverse Voltage MIN. PIV Minimum Reverse Breakdown Voltage @ 50 pA	OCR Scan	1N5550 1N5550 1N5551 1N5552 1N5553 1N5554 DO-34 DO-35 DO-41 LL-41	PDF

1n5552 jan Contextual Info: 1N5552+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2	Original	1N5552 Voltage600 Current25u 1n5552 jan	PDF
Contextual Info: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general	Original	1N5550 1N5553 1N5551 1N5554 1N5552	PDF
Contextual Info: 1N5550 thru 1N5552 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d e t nFeatures e t a P Reverse Voltage 200 to 1000V Forward Current 3.0A • • •	Original	1N5550 1N5552 MIL-S-19500 50mVp-p 11-Feb-02	PDF
Contextual Info: 1N5552+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2	Original	1N5552 Voltage600 Current25u	PDF
1N5550-1N5553 Abstract: 1n5550 1n5552 1n5553 Contextual Info: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIER 3 AMP, 200 THRU 1000 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general	Original	1N5550 1N5553 1N5551 1N5554 1N5552 1N5550-1N5553	PDF
1N5625 PIV Abstract: 1N5060 BYW55 1N4248 1n5062 1N5061 1N5059 1N5625 byw55 byw56 1N4245 Contextual Info: Sinterglass Rectifiers Part No. 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5614 1N5616 1N5618 1N5620 1N5622 G1A G1B G1D G1G G1J G1K G1M BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M	Original	-65oC 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5625 PIV 1N5060 BYW55 1N4248 1n5062 1N5061 1N5059 1N5625 byw55 byw56 1N4245	PDF
1N5552 Abstract: 1R50 1N5552 package 1N5550 1N5551 1N5553 1N5554 Contextual Info: . 19Ô9963 C E N T R A L S E M I C O N D U C T O R D T '- M - 'ï* ' 92D 00316 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package for general applications where high reliability is desired.	OCR Scan	000031t. 1n5550 1n5551 1n5552 1n5553 1N5553 1R50 1N5552 package 1N5554	PDF
Contextual Info: 1N5550 thru 1N5554 M ierasemi Corp. The diode èxperts SANTA ANA, CA I nr m o'C m ío n n a lin n m ll- 714 979-8220 RECTIFIERS FEATURES • • • • V oid less herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. JA N /TX /TX V available per M IL-S-19500/420.	OCR Scan	1N5550 1N5554 IL-S-19500/420. V01IA8E	PDF
VF09A Abstract: 1N5550 1N5551 1N5552 1N5553 1N5554 Contextual Info: Microsemi Corp. ' Jfic diode pxpen^ 5 m ^ Pii»^ àL SANTA ANA, C'A For more information call: 7I4 979-8220 RECTIFIERS FEATURES • • • • 1N5550 thru 1N5554 Voidless hermetically sealed glass package. Triple layer passivation. Melallurgically bonded.	OCR Scan	1N5554 MIL-S-19500/420. 50/jA VF09A 1N5550 1N5551 1N5552 1N5552 1N5553 1N5554	PDF
Contextual Info: 1N5550 thru 1N5554 Microsemi Corp. ^ Jfic chotis e x p e rt. SANTA ANA, CA For more information call: 7I4 979-8220 RECTIFIERS FEATURES • • • . Voidless hermetically sealed glass package. Triple layer passivation. Melallurgically bonded. JA N /TX/TX V available per M IL -S -19 5 0 0 /4 2 0 .	OCR Scan	1N5550 1N5554 50/jA	PDF

1N5552 PACKAGE Search Results

1N5552 PACKAGE Result Highlights (5)

1N5552 PACKAGE Datasheets Context Search

1N5550

1n5551

1N5552 package

1N5552 package

1N5552 package

w1853

1N5550

1N5552 package

88518

1N5552 package

1n5552 jan

1N5550-1N5553

1N5625 PIV

1N5552

VF09A