1N5408 DIODE Search Results
1N5408 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
1N5408 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no. |
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1n5408 | |
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Contextual Info: 1N5400 . 1N5408 1N5400 . 1N5408 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-02 Nominal current Nennstrom 7.5±0.1 Type 62.5±0. 5 Ø 4.5- Ø 1.2 ±0.05 Dimensions - Maße [mm] 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung |
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1n54001n5408do-201ul94v-0+3 | |
1N5400
Abstract: Dioden 1N5408 1N5401 1N5402 1N5404 1N5406 1N5407
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1n54001n5408do-201ul94v-0+6 | |
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Contextual Info: 1N5400 . 1N5408 1N5400 . 1N5408 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-04-30 Nominal current Nennstrom 7.5 ±0.1 Type 62.5 ±0.5 Ø 4.5+0.1 -0.3 Ø 1.2 ±0.05 Dimensions - Maße [mm] 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung |
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1n54001n5408do-201ul94v-0 | |
PK 1N5406
Abstract: 1N5400-1N5408 1N5408 Diode 1N5408 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408
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1n54001n54081n54011n5402+7 | |
1N5408 Diode 1N5408
Abstract: diode 1n5408 temperature rating diode 1N5408 diode cross reference 1N5404
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1n54001n5408125ocmil-std-750d+7 | |
1N5402 spice model
Abstract: 1N5408 Diode 1N5408 1n5402 1N5406 diode 1n5408 temperature rating IN 5408 diode 1N5400 1N5400-1N5408 1N5405 Diode 1n5400
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1n54001n54081n54011n5402+11 | |
1N5400 diode cross reference
Abstract: diode 1N5408 specifications 1n5408
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1n54001n54081000hrsmil-std-750d+5 | |
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Contextual Info: Formosa MS Axial Leaded General Purpose Rectifiers 1N5400 THRU 1N5408 List List. 1 Package outline. 2 |
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1n54001n5408mil-std-750dmethod-1051+3 | |
CT 1N5406
Abstract: 1n5402 1N54001 1N5406 1N5401 DO-201AD 1N5401 diodes DS28007 1N5407
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1n54001n54011n54021n5404+8 | |
1N5406
Abstract: 1N5402 DO-201AD 1n5401 1n5407 DS28007 1N5400-B
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1n54001n54011n54021n5404+6 | |
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Contextual Info: Silicon Rectifier Formosa MS 1N5400 THRU 1N5408 List List. 1 Package outline. 2 Features. 2 |
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1n54001n5408mil-std-750dmethod-1051+3 | |
DO-201AD
Abstract: 1N5408
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1n54001n5408mil-std-750dmethod-1036+5 | |
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Contextual Info: Diodes DIP Type 3.0A Rectifier 1N5400-1N5408 Features Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current MaximumRatingsandElectricalCharacteristics @ TA = 25 Parameter Symbol |
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1n5400-1n540810rent1n54001n5405+2 | |
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1N5405
Abstract: 1N5408 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407
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1n5408do-201ad500pcs/box12k/ctn+7 | |
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Contextual Info: 1N5400 - 1N5408 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4 |
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1n54001n5408201addo-201ad+2 | |
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Contextual Info: 1N5400 - 1N5408 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 3.0 Amperes DO - 201AD FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.21 (5.33) |
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1n54001n5408201addo-201ad+2 | |
1N5400
Abstract: 1N5408
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1n54001n5408201addo-201ad+2 | |
1N5408
Abstract: Diode 1n5400 1N5402 1N5404 1N5406 1N5400 1N5401 1n5401 dc
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1n54001n5408201addo-201ad+8 | |
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Contextual Info: 1N5400 - 1N5408 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.21 (5.33) |
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1n54001n5408201addo-201ad+2 | |
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Contextual Info: Extract from the online catalog EMG 45-DIO 8P-1N5408 Order No.: 2954879 The illustration shows version EMG 45-DIO 8E Diode module, with eight diodes, common cathode, diode type 1N |
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45-dio8p-1n5408if-2009 | |
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Contextual Info: Extract from the online catalog EMG 45-DIO 8M-1N5408 Order No.: 2954882 The illustration shows version EMG 45-DIO 8E Diode module, with eight diodes, common anode, diode type 1N 5408 |
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45-dio8m-1n5408if-2009 | |
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Contextual Info: Extract from the online catalog EMG 22-DIO 4P-1N5408 Order No.: 2952198 The illustration shows version EMG 22-DIO 4E Diode module, with four diodes, common cathode, diode type 1N 5408 |
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22-dio4p-1n5408if-2009 | |
diode marking DEC
Abstract: 4E-1N5408
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22-dio4e-1n5408if-2009diode marking dec | |