1N4747A PANJIT Search Results

1N4736A

Abstract: 1N4738A 1N4739A 1N4747A panjit 1N4744A 1N4737A 1N4740A 1N4757A
Contextual Info: 1N4736A~1N4757A GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts DO-41 Unit: inch mm FEATURES • Low profile package • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals

Contextual Info: 1N4736A SERIES SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • Low profile package 0.034 0.86 0.028(0.71) • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals • Plastic package has Underwriters Laboratory Flammability

Contextual Info: 1N4728A-G~1N4761A-G SILICON ZENER DIODE VOLTAGE 3.3 to 75 Volt POWER 1 Watt FEATURES • Low inductance 0.030 0.75 0.026(0.65) 1.0(26.0)MIN. • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability Classification

Contextual Info: 1N4728A-G~1N4761A-G SILICON ZENER DIODE VOLTAGE 3.3 to 75 Volts 1 Watts POWER FEATURES • Low inductance 0.030 0.75 0.026(0.65) 1.0(26.0)MIN. • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability Classification

glass tube zener diode code color

Contextual Info: 1N4728A-G~1N4764A-G SILICON ZENER DIODE VOLTAGE 3.3 to 100 Volts 1 Watts POWER FEATURES • Low inductance 1.0 26.0 MIN. 0.030(0.75) 0.026(0.65) • Glass package has Underwriters Laboratory Flammability Classification 0.177(4.5) • Lead free in comply with EU RoHS 2002/95/EC directives

1n4728a

Contextual Info: 1N4728A-G~1N4764A-G SILICON ZENER DIODE VOLTAGE 3.3 to 100 Volts 1 Watts POWER FEATURES • Low inductance 1.0 26.0 MIN. 0.030(0.75) 0.026(0.65) • Glass package has Underwriters Laboratory Flammability Classification 0.177(4.5) • Lead free in comply with EU RoHS 2011/65/EU directives

Contextual Info: 1N4728A-G~1N4764A-G SILICON ZENER DIODE VOLTAGE 3.3 to 100 Volts POWER 1.0 Watts FEATURES • Low profile package 0.030 0.75 0.026(0.65) 1.0(26.0)MIN. • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals

Contextual Info: 1N4728A-G~1N4761A-G SILICON ZENER DIODE VOLTAGE 3.3 to 75 Volts 1 Watts POWER FEATURES • Low inductance 0.030 0.75 0.026(0.65) 1.0(26.0)MIN. • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability Classification

Contextual Info: 1N4728A-G~1N4764A-G SILICON ZENER DIODE VOLTAGE 3.3 to 100 Volts POWER 1.0 Watts FEATURES • Low profile package 0.030 0.75 0.026(0.65) 1.0(26.0)MIN. • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

TSP160C

Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04