1N1190 Search Results

1N1190A

Contextual Info: MCC 1N1183A THRU 1N1190A
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 40 Amp Rectifier 50 to 600 Volts High Surge Capability Low Leakage Low Forward Voltage Drop

1N1190

Abstract: PBY306 1N3768 1N1183 1N1183R 1N1184 1N3766 PBY301 PBY302 SW11
Contextual Info: 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2005-01-31 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: 1N1190+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

Contextual Info: 1N1190R+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

DO-203AB Package

Abstract: 1N1190 1N1184 1N1186 1N1190 JANTXV 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

Contextual Info: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N3766-1N3768

Abstract: 1N1184 1N1184R 1N1186R 1N1188 1N1188R 1N1190 1N1190R INI186
Contextual Info: Military Silicon Power Rectifier 1N1184-1N1190, 1N3766— 1N3768 Dim. In ch e s Millim eter M inim um M a xim u m M inim um M axim u m N o te s Notes: 1. 1 / 4 - 2 8 U N F - 3 A 2. Full t h re a d s within 2 1 / 2 th re a d s 3* For R e v e rse P o larity add F

1N1190 JANTX

Abstract: 1N1184 1N1186 1N3768 1N3766 1N3768 JANTX JANTXV 1N1186 datasheet 1N1184R 1N1186R 1N1188
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information home | help | email Medium Power Rectifiers 35 Amps Military Product Products Quality Quote Request 1N1184 - 1N1190 / 1N3766 - 1N3768 Value Added E-mail DO203AB DO5 Available in JAN, JANTX and JANTXV

1N1184A

Abstract: 1N1186A 1N1188A 1N1190A 1N1183A 1N1183RA 1N1183R D0203AB
Contextual Info: MO TO R O L A SC D I O D E S / O P T O b 3 b 7 2 5 5 D G ñ b 2 1 b T3G • H O T ? bME D 1N1183A MOTOROLA SEMICONDUCTOR ■ thru TECHNICAL DATA 1N1190A 1N1190A is a Motorola Preferred Device 4 0 -A M P MEDIUM-CURRENT RECTIFIERS . . . fo r a p p lic a tio n s re q u irin g

70HF120

Abstract: 85HF120 88HF120 85hf80
Contextual Info: International llORlRectifier Rectifiers Standard Recovery 40-85 Amps Part Number •f <AV TC Vr r m V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100 150 200 300 400 500 600 43HF10 43HF20 43HF40 43HF60 43HF80 43HF100 43HF120 43HF140

1N1183A(R)

Contextual Info: 1N1183A R T HR U 1N1190A(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 40A 40Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N1183A(R)

1N1190

Contextual Info: 1N1190/R asi SILICON RECTIFIER DESCRIPTION: The 1N1190 Rectifier is Designed for General Purpose Power Supply Applications. • 1N1190 = Anode to Stud • 1N1190R = Cathode to Stud MAXIMUM RATINGS 600 V V rwM 35 A lo AVG @ Tc = 140 °C Tj -65 °C t o +190 °C

Contextual Info: 1N1190R+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

1N1190

Abstract: PBY303 1N3768 1N3766 1N1184 data sheet of 1N1183 PBY304 1N1183 1N1183R 1N1186
Contextual Info: 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 Nominal Current Nennstrom 13.6 Repetitive peak reverse voltage Periodische Spitzensperrspannung

1N1188A

Contextual Info: 1N1183A thru 1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N1190

Abstract: 1N3768
Contextual Info: Silicon Power Rectifier 1N1183— 1N1190, 1N3765-1N3768 Millim eter Dim . Inches Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity. Stud is Cathode Reverse Polarity: Stud is Anode A B C D E F G H J K M

86HF12

Abstract: 1N1185A 70HF120 b5ta
Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4A 5S 452 O Q l O b T S 2 International ïô r I Rectifier Rectifiers, Standard Recovery 40 TO 85 AMPS v Part RRM ’ f AV @TC number *FSM ^ 50Hz (V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100

1N1184

Abstract: part marking Ht1 DO-203AB Package 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

1N1184

Abstract: IN1183 1N1183 1N1185 1N1186 1N1187 1N1188 1N1189 1N1190 SPD1192
Contextual Info: SOLI» STATE DEVICES INC 1SE » |ö3tb011 □□DlöGt T I 1N1183 THRU 1N1190 SPD1192 AND SPD1194 35 AMP STANDARD RECOVERY RECTIFIERS 50-1000 VOLTS CASE STYLE D O -5 T-oi-n 11 XXID v a n g M M flppA. 14830 Valley View Avenue La Mirada. California 90638 213) 921-9660

1N1189

Abstract: 1N1190 SFD119 1N1184 1N1183 1N1185 1N1186 1N1187 1N1188 SPD1192
Contextual Info: SOLID STATE DEVICES INC 12E D J ä 3 b b D l l DDülflOt T | 1N1183 THRU 1N1190 SPD1192 AND SPD1194 35 AMP STANDARD RECOVERY RECTIFIERS 50-1000 VOLTS T - o i- h •r I I SSPII wtfwÊÊÊPmÊr II 14830 V a lley V iew A v e n u e La M ira d a . California 90638

Contextual Info: 1N1183A R THRU 1N1190A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 40A Features 40Amp Rectifier 50-600 Volts High Surge Capability Types up to 600V V RRM DO-5 Maximum Ratings Operating Temperature: -65 C to +200 Storage Temperature: -65 C to +200

PBY307

Abstract: 25C401 1N1190 1N3768 PBY303 1N1183 1N1184 1N1186 1N3766 PBY301
Contextual Info: 1N1183 . 1N1190, 1N3766, 1N3768 PBY301 . PBY307 Silicon-Power Rectifiers Silizium-Leistungs-Gleichrichter Version 2004-10-01 Nominal current Nennstrom 13,6 Repetitive peak reverse voltage Periodische Spitzensperrspannung 14,5 Ø 4+0.5 DO-5 Weight approx. – Gewicht ca.

Contextual Info: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N1183-1N1190

Abstract: 1N3768
Contextual Info: DIGITRON SEMICONDUCTORS 1N1183-1N1190, 1N3765-1N3768 STANDARD RECOVERY RECTIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Characteristics Symbol Conditions Average forward current IF AV 40 Amps TC = 146°C, half sine wave, RθJC = 1.25°C/W Maximum surge current