1MX16 DRAM Search Results

NT56V1616A0T-7

Abstract: NT56V1616A0T-8
Contextual Info: NT56V1616A0T 16Mb: 1Mx16 Synchronous DRAM NT56V1616A0T DATA SHEET 1Mx16 Synchronous DRAM REV 1.2 August , 2000 REV 1.2 , AUG. 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. NT56V1616A0T

Contextual Info: HYM7V64100B R-Series Unbuffered 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100B is high speed 3.3Volt synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

KM416C1200AJ-6

Contextual Info: 8MB 72 PIN FPM DRAM SIMM With 1Mx16 5VOLT TS2M3260R Description Features The TS2M3260R is a 2M by 32-bit dynamic RAM • 2,097,152-word by 32-bit organization. module with 4 pcs of 1Mx16 DRAMs assembled on the • Fast Page Mode operation. printed circuit board.

Contextual Info: 4MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT
TS1M3660G

Description Features The TS1M3660G is a 1M by 36-bit dynamic RAM module • Fast Page Mode Operation. with 2 pcs of 1Mx16 and 4 pcs 1Mx1 DRAMs assembled • Single +5.0V ± 10% power supply. on the printed circuit board.

Contextual Info: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to

Contextual Info: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to

Contextual Info: 4MB 72 PIN FPM TS1M3260R DRAM SIMM With 1Mx16 5VOLT Features Description The TS1M3260R is a 1M by 32-bit dynamic RAM module with 2 pcs of 1Mx16 DRAMs assembled on the printed circuit board. The TS1M3260R is optimized for application to systems which require high density and large capacity along with

HYM7V64100

Contextual Info: HYM7V64100 Q-Series SO DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100 is high speed 3.3Volt synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin SOJ or TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

Contextual Info: HYM7V64200B R-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 1Mx16 bit Synchronous DRAMs in 50-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

Contextual Info: HYM7V64100D Q-Series SO-DIMM 1Mx64 bit SDRAM Module based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100D is high speed 3.3Volt CMOS Synchronous DRAM module consisting of four 1Mx16 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

BVTE16

Contextual Info: »M YU H D W I • HYM7V64100C Q-SERIES > SO-DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100C is high speed 3.3Volt CM OS Synchronous DRAM module consisting of four 1Mx16 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

DRAM 1Mx1

Contextual Info: 8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT
TS2M3660G

Description Features The TS2M3660G is a 2M by 36-bit dynamic RAM module • Fast Page Mode Operation. with 4 pcs of 1Mx16 and 8 pcs 1Mx1 DRAMs assembled • Single +5.0V ± 10% power supply. on the printed circuit board.

Contextual Info: * « Y U II P A I — • HYM 7 V64 2 0 0 B R -S E R IE S > Unbuffered 2Mx64 U t SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 1Mx16 bit Synchronous DRAMs in 50-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

Contextual Info: » « r U N D W I « > H Y M 7 V 6 4 1 0 0 B R - S E R IE S Unbuffered 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100B is high speed 3.3Vo!t synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin giass-epoxy

8Mx64

Abstract: HYM7V72A1601TFG 4MX72 4MX16 1MX16 HYM7V64400 HYM7V64401
Contextual Info: •«ruMP/ti TABLE OF CONTENTS} 1. INDEX Table of Contents 2. PRODUCT QUICK GUIDE Ordering Information Quick Reference 3. SYNCHRONOUS DRAM MODULE DATA SHEETS 16M Synchronous DRAM Modules Page - Unbuffered DIMM HYM7V641OOBTRG- 1Mx64, 1Mx16 based

Contextual Info: SMART SM5640230UUXUGU Modular Technologies March 31, 1997 16MByte 2M x 64 DRAM Module - 1Mx16 based 168-pin DIMM, Buffered Features Part Numbers • • • • • • • • • • • SM56402300UXUGU SM56402301UXUGU SM56402308UXUGU SM56402309UXUGU

Contextual Info: SMART SM5320230UUXSUU Modular Technologies September 9, 1996 8MByte 2M x 32 DRAM Module - 1Mx16 based 72-pin SODIMM Features Part Numbers • • • • • • • • • • • SM53202300UXSUU SM53202301UXSUU SM53202308UXSUU SM53202309UXSUU Standard

Contextual Info: Industrial Temperature 16Mbit Enhanced Synchronous DRAM 1Mx16 ESDRAM Preliminary Data Sheet Features Description • • As a JEDEC superset standard, the Enhanced Synchronous DRAM ESDRAM is an evolutionary modification to the JEDEC standard SDRAM. The industrial temperature grade

IS41LV16100C-50TLI

Abstract: IS41LV16100C IS41C16100C-50TLI IS41LV16100C-50KLI IS41C16100C
Contextual Info: IS41C16100C IS41LV16100C 1Mx16 16Mb DRAM WITH EDO PAGE MODE ADVANCED INFORMATION APRIL 2010 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C/41LV16100C is 1,048,576 x 16-bit highperformance CMOS Dynamic Random Access Memories.

Contextual Info: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM • Part Identification high density memory module. The Samsung KMM366F224CJ1

382830-1

Contextual Info: SMART SM5640130UUXUGU Modular Technologies March 31, 1997 8MByte 1M x 64 DRAM Module - 1Mx16 based 168-pin DIMM, Buffered Features Part Numbers • • • • • • • • • • • SM56401300UXUGU SM56401301UXUGU SM56401308UXUGU SM56401309UXUGU

Contextual Info: SMART SM5360230U1P6UU Modular Technologies Preliminary 8MByte 2M x 36 DRAM Module - 1Mx16 & 4Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • SM536023011P6UU SM536023091P6UU Configuration : Parity Access Time : 60/70/80ns

KMM364C124AJ

Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124AJ consists of four CMOS

Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124AJ consists of four CMOS