1MX1 SRAM Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

28-pin SOJ SRAM

Abstract: EDI811024CS 28 pin ceramic dip 1MX1 1Mx1 SRAM
Contextual Info: mol EDI811024CS Electronic D««ign* Inci High Speed Megabit Monolithic SRAM 1MX1 Static RAM CMOS, High Speed Monolithic Features The EDI811024CS is an extremely high density, 1024Kx1 bit, high speed Static RAM designed for use in systems where fast computation, low power, and board

Contextual Info: moi EDI8M11024C Electronic D esign* In c. • High Speed Megabit SRAM Module 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadless chip

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

H31M1

Abstract: EDI8M11024C 901ac
Contextual Info: m o EDI8M11024C i Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadlesschip

Contextual Info: SAMSUNG ELECTRONICS INC b?E D WË 7 T b 4 m 2 D017bm KM611001 330 • SnGK CMOS SRAM 1MX1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)

H31M1

Abstract: EDI8M11024C
Contextual Info: EDI8M11024C ^E D I Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadlesschip

a810c

Abstract: EDI811024CS
Contextual Info: EDI811024CS m D \ Electronic D *lg n * I n c * High Speed Megabit Monolithic SRAM 1Mx1 Static RAM CMOS, High Speed Monolithic ] i D[ Features The EDI811024CS is an extremely high density, 1024Kx1 bit, high speed Static RAM designed for use in systems where fast computation, low power, and board

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

Contextual Info: ^EDI EDI811024CS Electronic D««igns In « High Speed Megabit Monolithic SRAM O iF M M K O > i 1Mx1 Static RAM CMOS, High Speed Monolithic Features The EDI811024CS is an extremely high density, 1024Kx1 bit CMOS Static 1024Kx1 bit, high speed Static RAM designed for use in Random Access Memory

Contextual Info: m o EDI8M11024C i E le c tro n ic D » * lg n i In c . High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadlesschip

EDI8M11024C

Contextual Info: ^E D I EDI8M11024C Electro nic D e s i g n i Inc. High Speed Megabit SRAM Module raiUMDMÂIHIY 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadless chip

1Mx1 SRAM

Contextual Info: WMS1M1-XDEX 1Mx1 SRAM MONOLITHIC ADVANCED* FEATURES • Access Times 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available PIN CONFIGURATION TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 ■ Packaging •32 lead, Ceramic SOJ Package 101

Contextual Info: 1/1/HITE /MICROELECTRONICS 1Mx1 SRAM MONOLITHIC WMS1M1-XDEX ADVANCED* FEATURES PIN CONFIGURATION TO P VIEW NCC 4 A13C 5 A14C 6 A15C 7 NCC 8 A16C 9 A 1 7 C 10 A 1 8 C 11 A 1 9 C 12 N C C 13 Q C 14 W E C 15 G N D C 16 A cce ss Times 20, 25, 35ns • M IL-STD -883 Compliant Devices Available

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK

1mx1 DRAM

Contextual Info: ADVANCED 3 HZ D E L E C T R O N I C PKG a 02547=13 0 0 0 0 3 5 4 2 E3AEP AEPDX1M8LB DYNAMIC RAM MODULE 7~-¥6-e3 '-/$ > > 1,048,576 x 8 Organization > > Low 0.510 in ch stand-off heig ht 0.350 using 90 degree lead pins > > 2 8 p in SIP is shorter in length than standard m odules

64kx4 DRAM

Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Contextual Info: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static

Memories

Abstract: UT54ACS244 UT54ACS151 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541 UT9Q512
Contextual Info: Aeroflex UTMC Application Note UTXQ512-AN-000 _ CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM This application note describes how to use two UT9Q512 4M SRAMs and one UT54ACS151 logic device

RAS 0510

Abstract: dynamic ram module
Contextual Info: AEPDX1M8LB DYNAMIC RAM MODULE > > 1,048,576 x 8 Organization > > Low 0.510 inch stand-off height 0.350 using 90 degree lead pins > > 2 8 pin SIP is shorter in length than standard modules > > Single +5V power supply > > TTL compatible 1 MEGAWORD BY 8 BIT LOW

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

HM6206

Abstract: 32Kx64
Contextual Info: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L

9660t

Abstract: LH521008
Contextual Info: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed

27c eeprom

Abstract: AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F
Contextual Info: STAND ARD MEMOR Y PRODUCT SELECT OR GUIDE ANDARD EMORY ELECTOR CERAMIC CONFIGURATIONS COMMITTED TO PROVIDING HIGH-QUALITY, INNOVATIVE SOLUTIONS TO THE HIGH-RELIABILITY MARKETPLACE STANDARD MEMORY PRODUCTS CERAMIC CONFIGURATIONS SRAM 16MEG MCM Configurable as

65656F

Abstract: TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation
Contextual Info: Radiation TEMIC Radiation Evaluation Results and Targets Total Dose Device Family Format/ Function/Speed/ Consumption TEMIC Type Total Dose Parametric Latch–Up LET Threshold SEU Cross Section/BIT Functionnal (Krads) (Krads) Iccsb (mA) (MeV/mg/ cm2) (MeV/mg/