1MH 250MA Search Results

j3305

Abstract: FJD3305H1TM j3305h1 FJD3305H1
Contextual Info: FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted

DIODE 1N4006

Abstract: 1mh inductor design MOSFET MTP1N60 600V 2A 1mh inductor IRFBC10 UNITRODE application note u132 800V dc to dc boost converter 1mH 250mA 1mH boost inductor ups circuit schematic
Contextual Info: DN-59A Design Note UCC3889 Bias Supply Controller Evaluation Kit − Schematic and Lists of Materials by Bill Andreycak Evaluation Kits facilitate a quick measurement of new IC performance in typical application circuits without a lengthy investment of time and resources. The

1mh 250ma inductor choke

Abstract: M57184N-715B C13-FR
Contextual Info: M57184N-715B Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 � High Voltage Input DC-to-DC Converter � ������������ � ���� � �� � � � � � ���� � � �

IRFBC10

Abstract: 1mh inductor design UNITRODE application note u132 MTP1N60 DN-59 MOSFET MTP1N60 600V 2A 2.2NF 600V 12vdc to 250vdc converters U-149
Contextual Info: DN-59A UNITRODE Design Note UCC3889 Bias Supply Controller Evaluation Kit - Schematic and Lists of Materials by Bill Andreycak Evaluation Kits facilitate a quick measurement of new 1C performance in typical application circuits without a lengthy investment of time and resources.

j3305

Abstract: j3305h1 FJD3305H1TM QS 100 NPN Transistor transistor Electronic ballast electronic ballast with npn transistor fjd3
Contextual Info: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*

1mh 250ma inductor choke

Abstract: ASIP 715b
Contextual Info: M57184N-715B Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 A High Voltage Input DC-to-DC Converter C B K N F H E M G J P 6 VIN 8 CURRENT DETECTOR 1 10 VO-1 VOLTAGE DETECTOR BASE DRIVER COMMON 4 CURRENT DETECTOR 12 18 VO-2

350mA 220vac driver

Abstract: 1mh 250ma inductor choke inductor 1mH 250mA 1mh inductor design M57184N-715 1mh inductor 5900-102 choke coil inductor mitsumi inductors C13-FR
Contextual Info: M57184N-715 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 A High Voltage Input DC-to-DC Converter C B 1 18 K N H E M G J P 6 VIN 8 CURRENT DETECTOR 1 10 VO-1 VOLTAGE DETECTOR BASE DRIVER Description: M57184N-715 is a non-isolated

350mA 220vac driver

Abstract: 1mh 250ma inductor choke
Contextual Info: M57184N-715B Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 A High Voltage Input DC-to-DC Converter C B K N F H E M G J P 6 VIN 8 CURRENT DETECTOR 1 10 VO-1 VOLTAGE DETECTOR BASE DRIVER COMMON 4 CURRENT DETECTOR 12 18 VO-2

j3305h1

Contextual Info: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*

Contextual Info: M57184N-715B A High฀Voltage฀Input DC-to-DC฀Converter C M57184N-715B B ���� 1 18 H K F E 6 ฀VIN D D G D J 8 CURRENT DETECTOR 1 10 ฀VO-1

diode 1N4006 specifications

Abstract: MTP1N60 MOSFET MTP1N60 600V 2A offline UPS APPLICATION 1mh inductor design nonisolated flyback converter IRFBC10 power mosfet 600v 1mH boost inductor 1N4006
Contextual Info: DN-59A Design Note UCC3889 Bias Supply Controller Evaluation Kit − Schematic and Lists of Materials by Bill Andreycak Evaluation Kits facilitate a quick measurement of new IC performance in typical application circuits without a lengthy investment of time and resources. The

ZENER DIODE z91

Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
Contextual Info: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.

FJB3307D

Abstract: QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat
Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B D2-PAK 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings

Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings

13003 TRANSISTOR

Abstract: E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte
Contextual Info: 13003 Transistor NPN www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range

Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings

KSC5305D

Abstract: US Global Sat
Contextual Info: KSC5305D NPN Silicon Transistor Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product

Contextual Info: KSC5305D NPN Silicon Transistor Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product

B332

Abstract: B513 B123 B223 B333 B682 UU10LF UU10LF-B123 UU10LF-B223 UU10LF-B332
Contextual Info: AC COMMON MODE CHOKES M OUTLINE／概要 1. Common mode chokes for effective AC line noise prevention UU10LF 1. ACラインノイズ防止に有効なコモンモードチョーク K Impedance Characteristics／インピーダンス特性 DIMENSIONS mm 外形寸法図

Contextual Info: FJB3307D High-Voltage Fast-Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch-Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Ordering Information

MAX223

Abstract: B123 B223 B332 B333 B513 B682 UU10LF UU10LFB UU10LFB-B123
Contextual Info: AC COMMON MODE CHOKES M OUTLINE／概要 1. Common mode chokes for effective AC line noise prevention UU10LFB 1. ACラインノイズ防止に有効なコモンモードチョーク K Impedance Characteristics／インピーダンス特性 DIMENSIONS mm

Contextual Info: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

IRFM350

Contextual Info: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

ktk dc drive

Abstract: IRLSZ44A sm 0038
Contextual Info: IRLSZ44A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10|iA Max. @ VDS= 60V