1KA IGBT Search Results

1KA IGBT Result Highlights (5)

Part	Manufacturer	Description	Download
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20N135SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1350 V, 40 A, Built-in Diodes, TO-247	Datasheet

1KA IGBT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J400A Abstract: calculation of IGBT snubber westcode igbt Contextual Info: Provisional Data Data Sheet Issue:- 2 WESTCODE Date:- 16 Feb, 2001 Absolute Maximum Ratings VOLTAGE RATINGS IGBT Series/Chopper Diode Type F0400LC18 MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1800 V VRSM Non-repetitive peak reverse voltage, (note 1)	Original	f0400lc18 vrm10v j400a calculation of igbt snubber +1westcode igbt	PDF
F1400NC Abstract: F1400NC18 TOT 2206 transistor calculation of IGBT snubber Contextual Info: Provisional Data Data Sheet Issue:- 1a WESTCODE Date:- 19 Apr, 2001 Absolute Maximum Ratings VOLTAGE RATINGS IGBT Series/Chopper Diode Type F1400NC18 MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1800 V VRSM Non-repetitive peak reverse voltage, (note 1)	Original	f1400nc18 f1400nc tot 2206 transistor calculation of igbt snubber	PDF
Contextual Info: Provisional Data Data Sheet Issue:- 1a WESTCODE Date:- 19 Apr, 2001 Absolute Maximum Ratings VOLTAGE RATINGS VRRM Repetitive peak reverse voltage, note 1 VRSM Non-repetitive peak reverse voltage, (note 1) OTHER RATINGS (note 6) IGBT Series/Chopper Diode	Original	f1400nc18	PDF
IRGC100B120UB Abstract: 1kA IGBT Contextual Info: PD - 93873 IRGC100B120UB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability	Original	irgc100b120ub 150mm 1ka igbt	PDF
IRGC20B60KB Contextual Info: PD - 94375 IRGC20B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 20A VCE(on) typ.=1.82V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)	Original	irgc20b60kb 150mm	PDF
1kA IGBT Abstract: IRGC30B60KB Contextual Info: PD - 94376 IRGC30B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 30A VCE(on) typ.=1.95V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)	Original	irgc30b60kb 150mm 1ka igbt	PDF
IRGC50B120UB Contextual Info: PD - 93869 IRGC50B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =50A VCE(on) typ.=3.15V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µs Short Circuit Capability	Original	irgc50b120ub 150mm 20khz	PDF
IRGC50B120KB Contextual Info: PD - 93870 IRGC50B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 50A VCE(on) typ.=2.15V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability	Original	irgc50b120kb 150mm	PDF
1kA IGBT Abstract: IRGC100B120UB induction heating Contextual Info: PD - 93873A IRGC100B120UB Die in Wafer Form Features G Benefits • • • • 1200V IC nom = 100A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C • GEN5 Non Punch Through (NPT) Technology • Low VCE(on) • 10µs Short Circuit Capability	Original	3873a irgc100b120ub 150mm 20khz +21ka igbt induction heating	PDF
IRGC75B120UB Contextual Info: PD - 93871 IRGC75B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =75A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability	Original	irgc75b120ub 150mm 20khz	PDF
IRGC50B60KB Abstract: 4kA IGBT Contextual Info: PD - 94377 IRGC50B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom =50A VCE(on) typ.=2.0V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability	Original	irgc50b60kb 150mm 4ka igbt	PDF
IRGC10B60KB Abstract: IRGS10B60KD Contextual Info: PD - 94409 IRGC10B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 10A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)	Original	irgc10b60kb 150mm irgs10b60kd	PDF
IRGC5B60KB Contextual Info: PD - 94408 IRGC5B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 5A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability	Original	irgc5b60kb 150mm irgs5b60kd	PDF
IRGC49B120UB Abstract: IRGPS40B120UD Contextual Info: PD - 94352 IRGC49B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=3.39V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability	Original	irgc49b120ub 150mm 20khz irgps40b120ud	PDF

IRGC100B120KB Abstract: 4kA IGBT Contextual Info: PD - 93874 IRGC100B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 2.2V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability	Original	irgc100b120kb 150mm 4ka igbt	PDF
IRGC25B120UB Abstract: 1kA IGBT IGBT Transistor 1200V, 25A induction welding Contextual Info: PD - 93867 IRGC25B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =25A VCE(on) typ.=3.37V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability	Original	irgc25b120ub 150mm 20khz 1ka igbt +2igbt transistor 1200v, 25a induction welding	PDF
IRGPS60B120KD Abstract: IRGC49B120KB Contextual Info: PD - 94353 IRGC49B120KB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=2.33V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)	Original	irgc49b120kb 150mm irgps60b120kd saturatio47	PDF
SK 5207 Contextual Info: PD - 94562 IRGC16B120KB Die in Wafer Form Features 1200V IC nom =15A VCE(on) typ.=2.55V@ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability	Original	irgc16b120kb 150mm gb15rf120k sk 5207	PDF
IRGC75B120KB Abstract: 0443 IC HA-1370S Contextual Info: PD - 93872 IRGC75B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 75A VCE(on) typ.= 2.1 V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability	Original	irgc75b120kb 150mm 0443 ic ha-1370s	PDF
Contextual Info: PD - 94560 IRGC8B60KB Die in Wafer Form Features 600V IC nom = 8.0A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA	Original	irgc8b60kb 150mm irgb8b60k	PDF
1kA IGBT Abstract: IRGC15B120KB Contextual Info: PD - 93866 IRGC15B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.46V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low V CE(on) 10µ s Short Circuit Capability	Original	irgc15b120kb 150mm 1ka igbt	PDF
for IR IGBT die Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH Contextual Info: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient	Original	7135a irg7ch30k10b 150mm o-247 +4an-1086 for ir igbt die irg7ph30k10 irg7ch	PDF
IRG7CH73K10 Abstract: IRG7CH73K10B MIL-HDBK-263 Contextual Info: PD - 97430A IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	7430a irg7ch73k10b irg7ch73k10 mil-hdbk-263	PDF
Contextual Info: PD - 97430 IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution	Original	irg7ch73k10b 1200e	PDF

1KA IGBT Search Results

1KA IGBT Result Highlights (5)

1KA IGBT Datasheets Context Search

J400A

F1400NC

IRGC100B120UB

IRGC20B60KB

1kA IGBT

IRGC50B120UB

IRGC50B120KB

1kA IGBT

IRGC75B120UB

IRGC50B60KB

IRGC10B60KB

IRGC5B60KB

IRGC49B120UB

IRGC100B120KB

IRGC25B120UB

IRGPS60B120KD

SK 5207

IRGC75B120KB

1kA IGBT

for IR IGBT die

IRG7CH73K10