1J DIODE Search Results

Contextual Info: DIODE ARRAY D 1J A 2 0 / D 1J A 4 0 / D 1J A 6 0 F e a tu re s • 9 4 - t — Y < r> Jfy 3 > Jf- y y ° 4 : ' r I tz r ' f O r - Y T U 4 x - r , • x f- j b ^ i P i i c l S j ^ - c # -? = ? x f ' - ° 7 * — L h J; fz. • D1JA series are diode arrays consist of

Contextual Info: MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE - B - D -iX i Q i X i Z - M 5THD 7 TYP. n l@ m m 0- i X r i C A Description: ff c] c] Û - AA AA- — Il 11 II 1J— 1J— — Y - DIA. (4 TYP.) TAB #110, t = 0.5

Contextual Info: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions

AKO 450

Abstract: high voltage diode BAV19 BAV20 BAV21 FDH400 VF-10
Contextual Info: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies National 9 Semiconduc tor" BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* ta=25°cunieSsothe ,seated

BAV19

Abstract: BAV20 BAV21 FDH400
Contextual Info: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies N BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

SMD zener 562

Abstract: S102T current regulative diode T 5 Z 27-2.e S501T S-501T S-123T s-562t 562T CRD Diode crd e102
Contextual Info: CURRENT REGULATIVE DIODE CRD CRD is a diode which supplies constant current to an electric circuit, even when power supply voltage fluctuations or load impedance fluctuations occur. CRD is used for current stabilization and current limiting. Part number z1 1J 2

DIODE 1N3070

Abstract: 1N3070 high voltage diode 1N3070 DIODE 1N3070 DIODE DATASHEET MMBD1401
Contextual Info: 1N3070 1N3070 DO-35 General Purpose High Voltage Diode Sourced from Process 1J. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 200 V IO Average Rectified Current

340 opto isolator

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode

Contextual Info: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies N a t io n a l Semiconductor BAV19 / 20 / 21 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* ta=25°c unlessotherw isenoted

IN5225

Abstract: BAV19 BAV20 BAV21 DO-35 BLUE CATHODE
Contextual Info: BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current

BAV19

Abstract: BAV20 BAV21 MARK GM DIODE IN5225A Color code diode DO-35
Contextual Info: BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 COLOR BAND DENOTES CATHODE High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 100 150 200 200 V V V mA W IV Working Inverse Voltage

MI32T

Contextual Info: CRO INFRARED EMITTING DIODE 02.94 “ 0.116 DESCRIPTION r 5 .L M I32T is GaAlAs infrared emiitting diode m olded in 3mm MI32T diam eter > Th 1.02 J V S ') (0.04) 0.75(0.03)_j max. 1J u clear transparent lens. 0.5 (0.02)~~ •2.5(0.1) ABSOLUTE MAXIMUM RATINGS

BAV19

Abstract: BAV20 DIODE 1J BAV21 FDH400
Contextual Info: BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current

BAV19

Abstract: BAV20 BAV21 FDH400
Contextual Info: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies National Semiconductor' BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Proce ss 1J. N S C alternate for B A V 1 9 & BAV20: FDH400. Absolute Maximum Ratings* Symbol W lv TA = 25°C unless otherwise noted

fdh400

Contextual Info: FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND FDLL400 BROWN 2ND BAND VIOLET LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics.

1J2H

Contextual Info: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions

Contextual Info: FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND FDLL400 BROWN 2ND BAND VIOLET LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics.

Contextual Info: CRO M P G B N B 32 T A -4 A / l 1J PURE GREEN/BLUE DESCRIPTION MPGBNB32TA-4A/11J is a pure green and blue lamp offering a changing color characteristics dependent on the direction the lamp is biased.These two light emitting diodes are mounted in a 3mm diameter clear

ADI315

Abstract: Z16B 1S144 AD1321 ad1318 AD1315 AD1315KZ AD1317 AD1324 AD664
Contextual Info: High Speed Active Load with Inhibit Mode AD1315 A N A LO G D EVICES FEATURES ±50 mA Voltage Programmable Current Range 1J> ns Propagation Delay Inhibit Mode Function High Speed Differential Inputs for Maximum Flexibility Hermetically Sealed Small Gull Wing Package

prepaid energy meter applications

Abstract: BIDDLE 241004-18 AVTM24-1J 48 volt Battery charger circuit megger calibration BIDDLE MEGGER ge traction motor repair 247101 fuse 1amp dlro
Contextual Info: AVTM24-1J Rev A April 2006 Instruction Manual DLRO Digital Low Resistance Ohmmeters Catalog No. 247000 Series M Valley Forge Corporate Center 2621 Van Buren Avenue Norristown, PA 19403-2329 U.S.A. 610-676-8500 www.megger.com DLRO® Digital Low Resistance Ohmmeters

LNJ326W83RA

Abstract: YTFA
Contextual Info: / DEVELO PM EN T SPECIFICATIO N on11/Product Number LNJ326W83RA ffflJ /TYP E V 1J — ÏÏM /M A TERIAL /APPLICATIO N /O U TLIN E InGaAlP ffliÉ KM liftSI / P MMA 40 mW ABSOLUTE MAXIMUM RATINGS ÌSftàM t/CO N D ITIO N ir — K / Green Light Emitting Diode

koa BwR1

Contextual Info: Surface Mount Devices www.koaspeer.com www.koaproducts.com Type Size inch mm 1H 0201 (0.6x0.3) 1E 0402 (1.0×0.5) 1J 0603 (1.6×0.8) 2A 0805 (2.0×1.25) 2B 1206 (3.2×1.6) 2E 1210 (3.2×2.6) 2H(W2H) 2010 (5.0×2.5) 3A(W3A) 2512 (6.3×3.1) Tolerance (％)

Contextual Info: DIODE SERIES i*s 2 V 3 7 h + — / \ 1J T7 # < % — K Schottky Barrier rectifier diodes for power supplies Elements Application Package Type No. TO-220AB lo Vf D: Double V (A) (V) It (mA) Vr max (A) max (V) 50 1.0 0.55 1.0 2.0 50 O* HRP32 s s 90 1.0 0.8

Contextual Info: SIEMENS SFH317 DAYLIGHT FILTER SFH317F SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm Surface not flat ¿039(1.0) .020 (.5) .028 (.7) .024(6) 024 ( ^ .016 (.4) n - • o iy ) .100(2 54) Collector .100(254) Emitter 1 " r L071(1J) '.047(1.2) 151 (385)