1II11 Search Results

l0609

Abstract: OT31
Contextual Info: •? ± qr & 'NO[ SS' ! hid3d N311 [MM iflOHllM 3 s ft > r/ in dbl OJ f t ^ A 0> ? a -f. 03Sfl 30 lON %m& % 4- QinOHS QNV 3VP Ol AHVI3I HdOHd SI M: W u> ^ M I -ir % 1VH1 NOIiVWHOdNl 5 ^ ^ B f J 1 ID ^ 00 L 06 09 29 ZS SS £S LS 6Ï It Sfr n n 11 LI LI

Contextual Info: 10 © 1— rr < X o Ld LU l/> 1- MATERIAL: - HOUSING: POLYAMIDE 46 FIBER GLASS FILLE D - TERMINAL: PHOSPHOR BRONZE PLA TE D c5 o UL 9 4 -V 0 , COLOR BLACK. WITH: 0 . 0 0 127/.000050 MIN GOLD IN CONTACT AREA, 0 . 0 0 190/.000075 MIN T IN /LE A D IN TA IL AREA, BOTH OVER 0 . 0 0 127/.000050

ray 40

Contextual Info: SHARP PC3Q66Q PC3Q66Q Mini-flat Package, High Collector-Emitter Voltage Type Half Pitch Photocoupler • Features ■ Outline Dimensions 1. High collector-emitter voltage V ceo (U nit : mm 10 . 3 * 03 : 80V) 2. Half pitch type (lead pitch : 1.27mm ) 1.27*

SOCKET MXM

Abstract: AM27C020 Product Selector Guide
Contextual Info: FINAL AMDH Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 55 ns maximum access time ■ 100% Flashrite programming — Typical programming time of 32 seconds ■ Low power consumption — 100 |aA typical CMOS standby current

Product Selector Guide

Contextual Info: FINAL AMD£I Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 55 ns maximum access time — Typical programming time of 32 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: I 96/ZL/ro VOSQZSd PERIS utcjS tuq jpoie •siojsisai nMop oiSoq /dnjini joj paan atp Supunniiip pire sjndm a2nproQll SnnnaAajd aoirepadnn-qSiq oj sao2 mdm aqj .eía3C3i¡m ajos isüi s^ndm atp sim a l qoiqM .p io n sng, sanaca; osp J£VZE>Z9 LLDdfrUd 3qj.

Contextual Info: IBM13T2649NC 2M x 64 2 Bank SDRAM SO DIMM Features 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module 2M x64 Synchronous DRAM SO DIMM Performance: 10 CAS Latency ; 12 Units 3 3 fcK Clock Frequency tcK Clock Cycle 100 : 83 10

Contextual Info: IBM13T2649JC 2M x 64 1 Bank S D R A M SO DIMM Features 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module 2M x64 Synchronous DRAM SO DIMM Performance: 10 CAS Latency ; 12 Units 3 3 fcK Clock Frequency tcK Clock Cycle 100 : 83

SOLO 15

Contextual Info: SCALA NON IMPEGNATIVA CDO N O T SCALE DIMENSIONI IN mm D MAX CDIMENS 10N5 14.9 TRO IN) •£3PROIEZIONE EUROPEA CEUR OP EA N P R OJ EC TI ON ) ± 0.2 A A S E Z . P A R Z I A L E P A R T I AL SEC.) A-A A R E A DI C O N T A T T O ( C ON TA CT AREA) B JZÍ 0. 63

2022 8pin

Contextual Info: TPS2020, TPS2021, TPS2022, TPS2023, TPS2024 POWER-DISTRIBUTION SWITCHES SLVS17 5 -D E C E M B E R 1998 • 50-m > -Maximum (5-V Input High-Side MOSFET Switch • Short-Circuit and Thermal Protection • Overcurrent Logic Output • Operating Range . . . 2.7 V to 5.5 V

byw50

Abstract: 2SD819 AC42C oT-33
Contextual Info: TO S H I B A { D I S C R E T E / O P T O } 9097250 TOSHIBA Tb <DI SCRETE/OPTO ' DE I ^ O ^ a S O 56L Of&Ol Q D 07Ö 01 0 | ~ °T-33~U S IL IC O N NPN T R IP L E D IF F U SE D M E SA TYPE Unit in mi COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0 Ü 5 .O U A X .