1GM X Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LMBTA05WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05WT1G LMBTA06WT1G S-LMBTA05WT1G S-LMBTA06WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Marking 1GM

Abstract: marking 1h LMBTA06WT1G 1GM x
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05WT1G LMBTA06WT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. MAXIMUM RATINGS Rating 1 Symbol Value LMBTA05 LMBTA06 2 Unit Collector–Emitter Voltage V CEO 60

1GM H

Abstract: Marking 1GM 1GM 5 LMBTA05LT1G LMBTA06LT1G 1gm sot 23 marking 1h 1gm marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO 60

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage

Contextual Info: M A X IM U M RATINGS Symbol MMBTA05 MMBTA06 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage v EBO 4.0 Vdc • c 500 mAdc Rating Collector Current — Continuous MMBTA05LT1 MMBTA06LT1* CASE 318-07, STYLE 6

55C100B

Abstract: 55C100BF 55C120B 55C120BF 55C60B 55C60BF 55C80B 55C80BF
Contextual Info: Silicon Controlled Rectifier Series 55C Dim. Inches Minimum A B C D E F G H J K M N P R S T U V W X Y Z AA H 1 -*-1 3-1 TO-208AD T0-83 Ì TO-209AC (TO— 94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead,

x-ray film illuminator

Abstract: 2WAY dashpot damping 751168
Contextual Info: Issued March 1997 232-4184 Data Pack G Dashpot dampers Data Sheet RS stock numbers 751-146, 751-152, 751-168, 751-174, 751-180, 751-196, 751-203 Applications ● Prevent damage to sensitive equipment from shock and vibration ● Reduce impact noise ● Damping extreme movements

SF3H42

Abstract: TOSHIBA THYRISTOR SF3H42LC2
Contextual Info: THYRISTOR SILICON DIFFUSED JUNCTION SF3H42 LC2 FOR AUT0-STR0B0 FLASHER APPLICATIONS. Unit in mm (Commutator Use) . Non-Repetitive Peak Off-State Voltage : V d s m = 600V . Critical Rate of Rise of On-State Current : di/dt=lOOOA/^s . Gate Trigger Current : 1g j =200(jA(Ma x .)

2sc2053

Abstract: 2Sc2053 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES

smd z44

Abstract: Z441 SMD D88 y252 smd S4M 1Y0616
Contextual Info: ijklminoqrsqt Wv p 6 ! 9!8 9"# "$%&' $ $&*+"&%":;< 9"= ">0?@ABC<D 9", "61(*+"4&*+@0&0+1#.%E 9"F ">5>>>5>>>"&4+%.#6&1,"*6-+"#60+ 9"G "HIJ",+.*61( 9"# "+04+%.#'%+"%.1(+K *&3"#+04K" )B>@LFF=MD $6($"#+04K" )B>@LFI>MD " ./#'.#&%K " 61"HH:K"" )B>@LFI>MD

70C100B

Abstract: 70C100BF 70C120B 70C120BF 70C50B 70C50BF 70C60B 70C60BF 70C80B 70C80BF
Contextual Info: Silicon Controlled Rectifier Series 70C Dim Inches Minimum TO-208AD T0-83 A B C D E F G H J K M N P R S T U V W X Y Z AA TO-209AC (T0-94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead, add suffix ”IL" to catalog number

SMD 1GM 2

Abstract: 1gm smd MMBTA06 SMD SOT-23 TYPE 1GM sot-23 1gm sot 23 sot-23 Marking 1h MMBTA05 MMBTA06 Marking 1GM
Contextual Info: Transistors IC SMD Type Driver Transistors MMBTA05, MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

SF500EX26

Abstract: SF500U26 thyristor tt 250 BA 250G SF500U
Contextual Info: THYRISTOR S F 5 SILICON DIFFUSED TYPE U , Y , E X 2 6 H IGH P OW E R C O NT R OL A PP LI C A T I O N S . Unit in mm FEATURES : . Repetitive Peak Off-State Voltage : VpR^-. Repetitive Peak Reverse Voltage : Vrrm | •¿~0b.2±O.'¿ -1600 - 2500V . Average On-State Current

BTA06LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* D riv e r T r a n s is to r s NPN Silicon COLLECTOR 'Motorola Preferred Device 3 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol MMBTA05 MMBTA06 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage

A169

Contextual Info: 7908 Series □ m in D-SUB Crimp Type M aterial: Housing: 30% Glass filled PBT UL94V-0. Contacts: Brass. Terminal Plating: Selective plated. Recommend Wire: 24AWG to 28AWG. E lectrical C haracteristics: Current Rating: 1 AMP. Insulator Resistance: 5000MQ min. at D C 500V.

BTA05

Contextual Info: M A X IM U M RATINGS Rating Symbol 1 MMBTA05 Unit MMBTA06 C o lle c to r -E m itte r V o lta g e v CEO 60 80 V dc C o lle c to r-B a s e V o lta g e V CBO 60 80 V dc E m itte r-B a s e V o lta g e v EBO 4.0 lC 500 C o lle c to r C u rre n t — C o n tin u o u s

100-6 SOT-23

Abstract: 1GM x
Contextual Info: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA05LT1 MMBTA06LT1 Collector −Base Voltage VCBO Collector Current − Continuous

Contextual Info: MCC TM Micro Commercial Components MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA55/MMBTA56

Contextual Info: 2mm X 2mm Pin Strip Header 1513 Series Straight Solder Tail, Optional Second Insulator Industry standard compatible High temperature dielectric IR, vapor & wave solder compatible Unique lengths available Maximizes use of PC board space Mates with boardmount and wiremount products

DigRF

Abstract: N5343A DigRF v4 n534 N5344U CRC lte DIGRFv4 LTE RFIC
Contextual Info: Agilent RDX Test Solutions for DigRF N5343A DigRF Exerciser Module N5344A DigRF Analyzer Module Data Sheet • Easily debug and integrate your DigRF based RF-IC and BB-IC components • Get insight from bit level to IQ modulated RF signals • Get the greatest

Contextual Info: Product specification MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter