1GM X Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LMBTA05WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05WT1G LMBTA06WT1G S-LMBTA05WT1G S-LMBTA06WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage

55C100B

Abstract: 55C100BF 55C120B 55C120BF 55C60B 55C60BF 55C80B 55C80BF
Contextual Info: Silicon Controlled Rectifier Series 55C Dim. Inches Minimum A B C D E F G H J K M N P R S T U V W X Y Z AA H 1 -*-1 3-1 TO-208AD T0-83 Ì TO-209AC (TO— 94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead,

SF3H42

Abstract: TOSHIBA THYRISTOR SF3H42LC2
Contextual Info: THYRISTOR SILICON DIFFUSED JUNCTION SF3H42 LC2 FOR AUT0-STR0B0 FLASHER APPLICATIONS. Unit in mm (Commutator Use) . Non-Repetitive Peak Off-State Voltage : V d s m = 600V . Critical Rate of Rise of On-State Current : di/dt=lOOOA/^s . Gate Trigger Current : 1g j =200(jA(Ma x .)

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES

70C100B

Abstract: 70C100BF 70C120B 70C120BF 70C50B 70C50BF 70C60B 70C60BF 70C80B 70C80BF
Contextual Info: Silicon Controlled Rectifier Series 70C Dim Inches Minimum TO-208AD T0-83 A B C D E F G H J K M N P R S T U V W X Y Z AA TO-209AC (T0-94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead, add suffix ”IL" to catalog number

15106GOA

Abstract: 15102G0A 15104G0A 15106G0A 15108G0A 15110G0A 15112G0A
Contextual Info: Silicon Controlled Rectifier Series 15 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Z -Y r x " , v u t T T*=r ^ i i i H l TO-209AB T093 Notes: 1. 3/4-16 UNF-3A 2. Full thread within 2 1/2 threads 3. For insulated cathode lead, add suffix ”IL” to catalog number

SMD 1GM 2

Abstract: 1gm smd MMBTA06 SMD SOT-23 TYPE 1GM sot-23 1gm sot 23 sot-23 Marking 1h MMBTA05 MMBTA06 Marking 1GM
Contextual Info: Transistors IC SMD Type Driver Transistors MMBTA05, MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

SF500EX26

Abstract: SF500U26 thyristor tt 250 BA 250G SF500U
Contextual Info: THYRISTOR S F 5 SILICON DIFFUSED TYPE U , Y , E X 2 6 H IGH P OW E R C O NT R OL A PP LI C A T I O N S . Unit in mm FEATURES : . Repetitive Peak Off-State Voltage : VpR^-. Repetitive Peak Reverse Voltage : Vrrm | •¿~0b.2±O.'¿ -1600 - 2500V . Average On-State Current

100-6 SOT-23

Abstract: 1GM x
Contextual Info: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA05LT1 MMBTA06LT1 Collector −Base Voltage VCBO Collector Current − Continuous

Contextual Info: MCC TM Micro Commercial Components MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA55/MMBTA56

Contextual Info: 2mm X 2mm Pin Strip Header 1513 Series Straight Solder Tail, Optional Second Insulator Industry standard compatible High temperature dielectric IR, vapor & wave solder compatible Unique lengths available Maximizes use of PC board space Mates with boardmount and wiremount products

Contextual Info: Product specification MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: CENTRAL SEMICONDUCTOR 1 • . . n a “n t . 3 oqdd3 5 t CS92 SERIES v e -tl._ SILICON CONTROLLED RECTIFIER 0.8 AMPS £ . . i i^?efiSä5G&/'Gr €;GLVj. € e B B £ ü ’CSS §eRLi.ce@BieaK;eß@[i5e @ sp . 100 THRU 800 VOLTS JEDEC T0-92 CASE Central

Contextual Info: Transistors IC SMD Type NPN General Purpose Transistor MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

1GM x sot-23 transistor

Abstract: 1GM sot-23 Marking 1GM MMBTA06LT1 1gm transistor MMBTA05 MMBTA05LT1 MMBTA06 2M252
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon MMBTA05LT1 MMBTA06LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value MMBTA05 MMBTA06 Unit Collector–Emitter Voltage V CEO 60 80 Vdc Collector–Base Voltage V CBO 60 80 Vdc

Contextual Info: Driver Transistors NPN Silicon MMBTA05LT1 MMBTA06LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 2 Value MMBTA05 MMBTA06 Unit Collector–Emitter Voltage V CEO 60 80 Vdc Collector–Base Voltage V CBO 60 80 Vdc Emitter–Base Voltage V Collector Current — Continuous

CS92A

Abstract: CS92B CS92D CS92M CS92N
Contextual Info: CENTRAL SEMICONDUCTOR CS92 SERIES 1 ' . . V « -, . SILICON CONTROLLED RECTIFIER 0.8 AMPS l£. • t L:ceßB55 iSGÖ/C C iG LV i. ©BBSC’CSS §eGLeCe@Biä^eseß©p e@s’0 . Central Sem iconductor Corp. 100 THRU 800 VOLTS JEDEC TO-92 CASE 1 4 5 A dam s Avenue

1GM x

Abstract: 1GM x sot-23 transistor 1GM sot-23 1GM sot-23 transistor MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
Contextual Info: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA05LT1 MMBTA06LT1 Collector–Base Voltage 60 80 VCBO MMBTA05LT1 MMBTA06LT1

Contextual Info: Driver Transistors NPN Silicon MMBTA05LT1 MMBTA06LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value MMBTA05 MMBTA06 Unit Collector–Emitter Voltage V CEO 60 80 Vdc Collector–Base Voltage V CBO 60 80 Vdc Emitter–Base Voltage V Collector Current — Continuous

Contextual Info: MCC TM Micro Commercial Components MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Halogen free available upon request by adding suffix "-HF"

sot-23 Marking 1h

Contextual Info: MCC TM Micro Commercial Components MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA55/MMBTA56