1CS MARKING Search Results

Contextual Info: OPERATING CHARACTERISTICS AT 25° C AMBIENT LED CHARACTER 1S 1T 1CS LUMINOUS I NT E N S I T Y PEAK WAVELENGTH DOMINANT WAVELENGTH VI EWING ANGLE 2 0 1 / 2 FORWARD VOLTAGE REV MIN TYP MAX UNITS TEST CONDITION 2500 4200 7200 mcd I f = 20 mA nm 518 nm 520 527 535

5Cs transistor

Abstract: transistor 5cs 3036
Contextual Info: Yuan Dean Scientific CO.,LTD 49TM Series ISDN S0INTERFACE TRANSFORMER SURFACE MOUNT, DUAL, 2000Vrms FEATURES MEETS THE PULSE WAVEFORM TEMPLATE OF CCITT 1.430 WHEN RECOMMENDED TRANSFORMER AND CHIP PAIR ARE USED. ● DEVELOPED FOR ENHANCED EMC PERFORMANCE. ● EXCELLENT LONGITUDINAL BALANCE.

56TH-122L1

Abstract: 56TH-122B1 162C1 56th transformer ratio 20 to 1 datasheet
Contextual Info: Yuan Dean Scientific CO.,LTD 56TH Series T1/CEPT/ISDN-PRI TRANSFORMER REINFORCED INSULATION,3KVrms,SMT Part Number: FEATURES •Dual Surface Mount Package Contains Both Transmit. • Models Matched To Leading Transceiver Ics • Meet 3kv Reinforced Insulation

512M 29

Abstract: 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking
Contextual Info: NOR-Flash Code Information 1/5 Last Updated : August 2009 K8XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 - De-Multiplexed Burst 12 : 512, 16Bank 26 : 128M, 8M / 16Bank / 66) 27 : 128M, 8M / 16Bank / 77) 28 : 128M, 8M / 16Bank 29 : 128M, 8M / 16Bank / 88)

HYUD16162

Abstract: HYUD16162B HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
Contextual Info: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

HYUD16162B

Abstract: HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
Contextual Info: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 3. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

HYUD16162B

Abstract: HYUD16162
Contextual Info: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

1CS MARKING

Abstract: TCS1
Contextual Info: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01

HY64UD16162B

Abstract: HYUD16162
Contextual Info: HY64UD16162B-DF P xxx Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ’03 1.2 Add to Lead Free Product Mar. 09. ‘04

50T-1221A

Abstract: 50-T1221A 50T-1222C 50T-1221
Contextual Info: Yuan Dean Scientific CO.,LTD 50T Series T1 CARRIER INTERFACE TRANSFORMER FEATURES Part Number: •FOR T1/CEPT TELECOM APPLICATIONS •PROVIDE 1500Vrms ISOLATION •COMPACT SINGLE AND DUAL PACKAGES •DESIGNED TO MEET CCITT 7 & FCC •RECOGNIZED BY UL 1950.

Contextual Info: HY64UD16162B- P Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ’03 1.2 Add to Lead Free Product Mar. 09. ‘04 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

Contextual Info: HY64UD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul. 18. ’ 01 Preliminary Oct. 06. ’ 01

VL15

Contextual Info: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01

HYUD16162

Abstract: HYUD16162M HY64UD16162M HY64UD16162M-DF70E HY64UD16162M-DF70I HY64UD16162M-DF85I
Contextual Info: HY64UD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’01 Preliminary 1.1 Revised Jul. 03. ’01 Preliminary Jul.18. ’01 Preliminary Oct. 07. ‘01 Preliminary

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

transistor bc 499

Abstract: 1CS K2 marking 1cs transistor Bc 580
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code

transistor Bc 580

Abstract: marking 1cs 847S transistor bc 100
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration

transistor bc icbo nA npn

Abstract: 847S Q62702-C2372 marking 1cs
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

TG 2309

Abstract: MMBT2369LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR NPN Silicon 'M o to ro la Preferred D evice BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value C ollector-E m itter Voltage v CEO 15 Vdc C ollector-E m itter Voltage

Contextual Info: HY64UD16322A Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 03. ’03 Preliminary 1.1 Change process code May. 13. ’03 -B This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

Contextual Info: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

Contextual Info: HY64LD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01

HYNIX lot date code

Abstract: 1CS MARKING HY64SD16162B HY64SD16162B-DF85E HY64SD16162B-DF85I HYSD16162B
Contextual Info: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

Contextual Info: PART NUMBER LED COLOR 5 5 1 - 1 502F GREEN 551 - I602F YELLOW 5 5 1 - 1 702F RE D REV CHARACTERISTICS LUMINOUS A R o H S C om p ì ian t 551 - IX02F Part N u m b e r s w i t h the "F" s u f f i x e n d i n g are R o H S C o m p l i a n t . E x a m p le. 55 I - I502F