1BT 60 Search Results

Contextual Info: K M 4 4 S 4 0 2 1BT SDRAM ELECTRONICS 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

Contextual Info: N E C ELECTRONICS INC blE T> • bM27525 D0342bfl 1BT H N E C E MC-421000A32 1,048,576 X 32-Bit Dynamic CMOS RAM Module JE/ W NEC Electronics Inc. Description Pin Configuration The MC-421000A32 is a fast-page dynamic RAM module organized as 1,048,576 words by 32 bits and de­

AN236

Abstract: IC tl 495 an236 panasonic
Contextual Info: T \y AN236 IC AN236 "t -7 — "7" Is \¿ • V" 7* Jr-V l) J* IMIH ï S / C o lo r T V S u b c a r r i e r P r o c e s s i n g C ir c u it H 1Bt S /D esc rip tio n AN 236 li, t ÿ —T U nit 6.6 ± 0 .5 60-“£ b' 1C S lfc3 l« 0 i& T -ro 2C • m 3C °+i 4c

1Bt 87

Abstract: P3420 p32100 P3412 polytron p35 P53-15L P38-12S 1BT 88 P3475 POLYTRON P33-48ST
Contextual Info: P POLYTRON DEVICES, Inc. LINEAR ENCAPSULATED POWER MODULES REGULATED 5Vdc-250Vdc P.C. CARD OR CHASSIS MOUNTING Specifications FEATURES • UL, CE & CSA Approved All Models • Regulation Line & Load 0.2% to 0.02% • P.C. Card/Chassis Mounting 115 Vac, 50 to 400 Hz @ 25°C

P31M

Abstract: P53-1580 P53-15L sot p33 P33-24S P33-12SM 1Bt 87 P32-18S P3710 P35-12
Contextual Info: 7247M7Ô DDDOObb MT2 « P D I 47E T> POLYTRON DEVICES INC UNEAR ENCAPSULATED POWER MODULES ~ FEATURES: • REGULATION 1 r ' 5 T FRO M STOCK • P.C. CARD OR CHASSIS MOUNTING • SHORT CIRCUIT PROTECTION • SINGLE, DUAL, TRIPLE OUTPUTS SPECIFICATIONS: I INPUT VOLTAGE AND FREQUENCY:

P53-15L

Abstract: Polytron Devices P35-12 polytron P52-15 P53-1580 p53-12 P521-2 polytron P33-12
Contextual Info: POLYTRON DEVICES INC 7547478 0000037 3 15E » i - b '- 0 3 LIN EAR EN C A PSU LA 7X 57-05 FEATURES: 1 • REGULATION FROM, STOCK • P.C. CARD OR CHASSIS MOUNTING • SHORT CIRCUIT PROTECTION • SINGLE, DUAL, TRIPLE OUTPUTS SPECIFICATIONS:B M INPUT VOLTAGE AND FREQUENCY:

PH 21 DIODE

Abstract: f21 diode 4b1 diode ER 900 16B1
Contextual Info: 3 Amp Encapsulated Assemblies ER Series D im en sio n s Inches o — I B i- C -I A B C D t D 1.31 0.44 1.06 0.47 M illim eters N otes 33.3 11.1 26.9 11.9 — Note 1: 1 / 4 '- 2 0 Mounting Stud Max. PRV Rating Per Circuit Arm Microsemi Catalog Number 100 200

Contextual Info: Features: OUTPUT Cat. No. PS-C12012 DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER PEAK CURRENT PEAK POWER 12V 24V 10A 5A 0 ~ 10A 0 ~ 5A 120W 120W 15A 7.5A 180W 3 sec. 3 seconds max., please refer to peak loading curves 100mVp-p 100mVp-p RIPPLE & NOISE (max)

marking code 1AW

Abstract: SMB10J6.0 marking code 1ay marking code 1bx marking code 1AM SMB-10 SMB8J11C
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional polarity only

marking 1af

Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
Contextual Info: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

cslw

Abstract: CSL-200E5GT
Contextual Info: Standard LED Lamp * "R " 6 5 5 n m Iv R ed Version has been d isco n tin u e d u n i t = m c d (a) I f = 1 0 m A . A l l t h e l e n s a r e c o l o r e d d i f f u s e d . C S L - W 1 1 4 X 4 is w a t e r c l e a r . D evice Bright Red (H) Red (R) O range (E)

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

marking code 1bx

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

smb8j28

Abstract: mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

marking CODE 1BS

Abstract: 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 SMB10J5 MARKING 1BW 1BW MARKING marking CODE 1BH
Contextual Info: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)

marking code 1BL Diode

Abstract: marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002 SMB10
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

marking code 1BL Diode

Abstract: mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

SMBJ vishay

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

marking code 1BL Diode

Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional