1AM SOT23 Search Results

1AM MMBT3904

Abstract: transistors 1am transistor 1am
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ

LMBT3904LT1G

Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

1AM marking transistor

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

marking 1am

Abstract: transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 MMBT3906 1AM 6 1aM sot-23 transistor
Contextual Info: MMBT3904 Pb 0.2 Watts NPN Plastic-Encapsulate Transistors RoHS COMPLIANCE SOT-23 Features — As complementary type, the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction — Marking: 1AM Dimensions in inches and millimeters Maximum Ratings

1AM marking transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

sot23 marking 1AM

Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
Contextual Info: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — As complementary type the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

transistor marking 1am

Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

k4070

Abstract: MMBT3904
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1AM B E SOT-23

LMBT3908LT1G

Abstract: 1AM 6 1AM c
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a • Pb−Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

transistor 1am

Abstract: 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23
Contextual Info: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate

1AM c

Abstract: 1AM marking transistor
Contextual Info: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

transistor 1am

Abstract: 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am
Contextual Info: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

TRANSISTOR SMD MARKING CODE 1AM

Abstract: smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3904-G NPN RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.118(3.00) 0.110(2.80) transistor MMBT3904-G is recommended 3 0.055(1.40) 0.047(1.20) 1 2 0.006(0.15)

MMBT3904-HF

Abstract: transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING
Contextual Info: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)

Contextual Info: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)

TRANSISTOR SMD MARKING CODE 1AM

Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)

1AM transistor

Contextual Info: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) Collector 3 0.006(0.15)

1AMY

Abstract: marking code 1AM 1AM marking sot23 1am sot 23 marking code 1AM
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • x x • x Capable of 350mWatts of Power Dissipation and 200mA Ic. Operating and Storage Junction Temperatures: -55ć to 150ć

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • x x • • • x x x Capable of 350mWatts of Power Dissipation and 200mA Ic. Operating and Storage Junction Temperatures: -55ć to 150ć

1AMY

Abstract: marking code 1AM sot 23 marking code 1AM 1am sot-23 code 1am
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • x x • • • x x x Capable of 350mWatts of Power Dissipation and 200mA Ic. Operating and Storage Junction Temperatures: -55ć to 150ć

sot 23 marking code 1AM

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features x Halogen free available upon request by adding suffix "-HF" • Capable of 350mWatts of Power Dissipation and 200mA Ic.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904 TRANSISTOR NPN FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR