1AM 4 Search Results

1AM MMBT3904

Abstract: transistors 1am transistor 1am
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ

LMBT3904LT1G

Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

1AM marking transistor

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

smd 1AM

Abstract: smd transistor 1AM 1am smd modbus* M-BUS microstrip antenna MD868N25-1AM Prepaid Gas Meter RTLS msp430 MBUS M-BUS to USB
Contextual Info: www.witechradio.com Wireless Technologies RF Integrated Module WITECH MD868N25-1AM 868 MHz - Narrow Band - 25 mW Core 1 - Footprint A - Microstrip Antenna Preliminary Rev 0.2 12/09 Witech MD868N25-1AM is a 868 MHz, narrow band 25 mW fully integrated hardware/firmware RF module

smd transistor 1AM

Abstract: microstrip antenna smd 1AM 1am smd 1AM 6 SMD 1am Transistor solar panel MSP430 solaR antenna 868
Contextual Info: www.witechradio.com Wireless Technologies RF Integrated Module WITECH MD868W25-1AM 868 MHz - Wide Band - 25 mW Core 1 - Footprint A - Microstrip Antenna Preliminary Rev 0.2 12/09 Witech MD868W25-1AM is a 868 MHz, wide band 25 mW fully integrated hardware/firmware RF module

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

Contextual Info: \ î— . R 6 -2 1 O C R E V .0 4 -9 7 3 . 1AM-Û7 8 1 1 . C A . CO / K / mJ a . . _ . . . 7 / a W a i k m *! .- , i J

1AM marking transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

Scans-0017333

Contextual Info: IAD5 SHARP-CUTOFF PEN T O D E S U B M IN IA TU R E TYPE GENERAL DATA Electrical: F i 1am ent, C o a te d : V o l t a g e . 1 .2 5 . C u r r e n t .0 .0 4 .

sot23 marking 1AM

Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
Contextual Info: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — As complementary type the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

CM96ABC

Abstract: T25 press-fit apfel HCF32ACT HCF48ABC-T HCF48ABCT HCF48 CS12 550VRMS T-2.5
Contextual Info: T O 1 1 1AM GQDGIRT 1QO flPF€L DIN 41612 EUROCARD FEMALE TYPE: HALF C % NUMBER OF CONTACTS: 48/32/24/16 * OPTION: CONNECTOR WITH PRE-INSTALLED SNAP-IN MOUNTING CLIPS. VARIATIONS. * PLEASE REFER TO PAGE 3 FOR COMPLETE PART NUMBER CODING. OTHER VARIATIONS, PLEASE CONSULT FACTORY.

M0501

Contextual Info: _a_ File No. I 529 zn: SHEET ILL SPECFICATION Current Rating: 1Am ps/C ontact Max Contact Resistance:4Milliohm s Max/Contact Insulation Resistance: 1000M egohm s Min At 500V Dielectric Withstanding Voltage: 1000V AC Min Operating Voltage:60V AC/DC Operating Temperatures:Gold Plated:—5 5 ‘C ~ + 1 2 5 ‘C

C77E

Abstract: C77E-MINI
Contextual Info: 1 I I I 6 File No. C77E—MINI DIN-6SMA1BK I SHEET 1 / SPECIFICATIONS: Contact Current Rating: 1Am peres Dielectric Withstanding Voltage:AC 500V Insulation Resistance:500 M egohm s Min. At DC 500V Contact Resistance:30 Milliohms Max. Opterating Temperature

transistor marking 1am

Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

k4070

Abstract: MMBT3904
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1AM B E SOT-23

1AM 6

Abstract: 1AM c access point cisco 2691 1am analog Cisco 3725 CISCO 1700 NM-2E2W Cisco Cables 1am f NM-16A
Contextual Info: DATA SHEET Cisco 1700, 2600, 3600, and 3700 Integrated V.90 Modem WAN Interface Cards One- and two-port analog modem WAN Interface Cards Part numbers WIC-1AM and WIC-2AM are now available for the award-winning Cisco 1700, 2600, 3600, and 3700 Series modular router

Contextual Info: 1 _a_ I File No. 1.27 oooooooo oooooooooo zn: SHEET ILL Current Rating:1Am ps/Contact Max. Contact Resistance:4Milliohm s/Contact Max Insulation Resistance: lOOOMegohm Min At 5 0 0 V Dielectric Withstanding Voltage: 1000V AC Min Operaing Voltage:60VAC/DC Operaing Temperatures:Gold Plated:—5 5 ’C ~ + 1 2 5 'C

Contextual Info: 1 I IE I File No. I I 100 , I ISHEET Q 1/1 SPECIFICATIONS C ontact Rating: 1Am p C ontact Resistance: 3 0 M egohm s Max. Insulation Resistance: 1000 M egohm s At 5 0 0 DC Dielectric Strength: 1000V AC RM S Capacitance: 1 PF Max. Vibration: MIL— STD— 13 4 4 A

BF 194 transistor

Abstract: BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 1 A inTO -39 ( - T O - 5 ) metal case Type Maximum ratings C haracteristics at Tamb f'Ù (ñ ) T , = 1am b 25 °C T = ÍÍ5 °C c a se (Tcase = 100 °C) T ,°C 200 200 200 200 200 200

MDJ06F

Contextual Info: 31 File No. I 099 zn: SH E E T _L_ZL SPECIFICATION A C ontact Current Rating: 1Am p Dielectric Withstanding: 1000V AC Min. Per Minute Insulation Resistance:500 M egaoh m s Min. C ontact R esistance:30 Milliohms Max. Operation Temperature:— 55‘C ~ + 1 0 5 ‘C

MI-7441

Abstract: 156C MI-19461
Contextual Info: POWER TRIODE WATER 4 F O R C ED -A IR COOLED GEN E RA L DATA E le ctr i c a l : F i 1am en t, T u n g s t e n : V o l t a g e . 1 2 . 6 .a c o r d c v o l t s C u r r e n t . 320 . amp

ses sc160m-03b

Abstract: CD40103B HCC40103B TC40103BP 40103B
Contextual Info: — 116 — 401 03B 8 Stage P re s e ttab le Synchronous Down C ounter 8 B it Binary / U 7 / * 71 T V m im 4M nm m ?u~/9 j 5PÊ m 8 t 'y b î 9')7 ÂPË T U - fe ’/ h 3 X t -V lanw c ïTcë L L m C LR .1AM JO 1 I 1 I 1 J7 1 8 -S T A G E OOWN COUNTER C O /Z D

OPA 279

Contextual Info: - 1 1 6 - • B.B. ft Id fë ié ip fi + 20 ie ^ V ¡1] V c c V ( p - •/ O PA 10 1AM, O PA 102AM Vcc ft ( T a - = 25°C) fë k m it <X , Ao Æ £ ft R 'J ' m 7-f K • K FET) DC?f — ~7’> —~f 94 V o = ± 10V, i?L = l k Vid + 5~ ±20 V + 20 V Vo + 20