1AM 4 Search Results

1AM MMBT3904

Abstract: transistors 1am transistor 1am
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ

smd 1AM

Abstract: smd transistor 1AM 1am smd modbus* M-BUS microstrip antenna MD868N25-1AM Prepaid Gas Meter RTLS msp430 MBUS M-BUS to USB
Contextual Info: www.witechradio.com Wireless Technologies RF Integrated Module WITECH MD868N25-1AM 868 MHz - Narrow Band - 25 mW Core 1 - Footprint A - Microstrip Antenna Preliminary Rev 0.2 12/09 Witech MD868N25-1AM is a 868 MHz, narrow band 25 mW fully integrated hardware/firmware RF module

smd transistor 1AM

Abstract: microstrip antenna smd 1AM 1am smd 1AM 6 SMD 1am Transistor solar panel MSP430 solaR antenna 868
Contextual Info: www.witechradio.com Wireless Technologies RF Integrated Module WITECH MD868W25-1AM 868 MHz - Wide Band - 25 mW Core 1 - Footprint A - Microstrip Antenna Preliminary Rev 0.2 12/09 Witech MD868W25-1AM is a 868 MHz, wide band 25 mW fully integrated hardware/firmware RF module

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

1AM marking transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

Scans-0017333

Contextual Info: IAD5 SHARP-CUTOFF PEN T O D E S U B M IN IA TU R E TYPE GENERAL DATA Electrical: F i 1am ent, C o a te d : V o l t a g e . 1 .2 5 . C u r r e n t .0 .0 4 .

transistor marking 1am

Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BF 194 transistor

Abstract: BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 1 A inTO -39 ( - T O - 5 ) metal case Type Maximum ratings C haracteristics at Tamb f'Ù (ñ ) T , = 1am b 25 °C T = ÍÍ5 °C c a se (Tcase = 100 °C) T ,°C 200 200 200 200 200 200

MI-7441

Abstract: 156C MI-19461
Contextual Info: POWER TRIODE WATER 4 F O R C ED -A IR COOLED GEN E RA L DATA E le ctr i c a l : F i 1am en t, T u n g s t e n : V o l t a g e . 1 2 . 6 .a c o r d c v o l t s C u r r e n t . 320 . amp

ses sc160m-03b

Abstract: CD40103B HCC40103B TC40103BP 40103B
Contextual Info: — 116 — 401 03B 8 Stage P re s e ttab le Synchronous Down C ounter 8 B it Binary / U 7 / * 71 T V m im 4M nm m ?u~/9 j 5PÊ m 8 t 'y b î 9')7 ÂPË T U - fe ’/ h 3 X t -V lanw c ïTcë L L m C LR .1AM JO 1 I 1 I 1 J7 1 8 -S T A G E OOWN COUNTER C O /Z D

OPA 279

Contextual Info: - 1 1 6 - • B.B. ft Id fë ié ip fi + 20 ie ^ V ¡1] V c c V ( p - •/ O PA 10 1AM, O PA 102AM Vcc ft ( T a - = 25°C) fë k m it <X , Ao Æ £ ft R 'J ' m 7-f K • K FET) DC?f — ~7’> —~f 94 V o = ± 10V, i?L = l k Vid + 5~ ±20 V + 20 V Vo + 20

RCA-203T2

Abstract: Oscillator 8600 RCA203
Contextual Info: 5786 PO W ER TR IO D E F O R C E D - A I R C OO LED G£N£RAL DATA E le ctr ic a l: Fi 1am ent, Th o ri a te d -T u n g s te n : 11 ± 0 .6 . . . . ac ojr de v o lt s V o lta g e . amp C u r r e n t .1 2 .5 .

CD40103B

Abstract: HCC40103B TC40103BP 40103B
Contextual Info: — 116 — 401 03B 8 Stage P re s e ttab le Synchronous Down C ounter 8 B it Binary / U 7 / * m im 4M nm m ?u~/9 71T V j 5PÊ m 8 t'y b î 9')7 TU-fe’/ h 3 X t -V lanw ÂPË c ïTcë L L m C LR .1AM JO 1 I 1 I 1 J7 1 8 -S T A G E OOWN COUNTER C O /Z D

816 rectifier

Abstract: ST12
Contextual Info: 816 HALF-WAVE MERCURY-VAPOR RECTIFIER G E N E R A L DATA Electrical: F 1 1am ent, C o a t e d : ^ lTt‘ Av. Max. V o l t a g e . C u r r e n t a t 2 .5 v o l t s . . . . H e a t i ng t¡m e a t r a t e d v o l t a g e .

bcr1am-10

Abstract: BCR1AM-12 H-17 H-18 H-19 bj 94 131- 6 BCR1AM-12A equivalent BCR1AM-12(A) equivalent MCP4261-103-E/BCR1AM-12(A) equivalent
Contextual Info: - 1 7 5 = B C R 1AM • « • » IS * - * 3 > • 0 f í7 y b ÍÜffl o H iB 1 t iO f» J!S i- ;u K Ìft ià T O -9 2 S'J ■ * * £ » K ^ b l.5 m m ^ i- U - T 2 ^ i.h r - iü iia ) I drm V tm BCR1AM -4 BCR1AM -6 B C R 1 A M '8 B C R lA M - 1 0 BCR1AM -12

Contextual Info: 1AM • Chip Trimmer Potentiometers RV Dimensions • 4$ M Features ic m ttu t-T o ttz, U 7 P - ^ E B # ^ T 7 " ' J > K * i r l Z U # l t n I f i g T " r o !IS £ L ^ f l ' v - f j - * £ 7 ° ^ X i L t o U ltra sm all o p e n -fra m e trim m er w hich otters highly re lia b le thick film as e le m e n t. Its ultra sm all size and high accu racy

rca 807

Abstract: rca 1619 transmitting tube 807 1624 tube rca 036 rca tube 80 1624 1619 tube Scans-0017304 RCA Tube 807
Contextual Info: 1624 TRANSMITTING BEAM POWER AMPLIFIER F i 1am ent C o a t ed V o ltag e 2 .5 Cu r r e n t 2. o Transconductance fo r p l a t e c u r r e n t o f 50 ma . «000 a p p r o x . D ir e c t I n t e r e l e c t rode C a p a c it a n c e s ; G rid to P l a t e 0 .2 5 m ax.

Contextual Info: 10 >±IE NOTES 1. K A 7 g ¥ : 5I067 V U - O C MATE WITH : 5 I06T SERIES 3 =5 ' tw? 2. # « NON-ACCUM. (PITCH) MATERIAL D I 7 \ - : P B T P (7JETT1 5 % A C 0 , U L 9 4 V - 0 WAFER : PBTP (G.F I5X), UL94V-0 Dw PIN : J tlis D'VT7)ETi± s l A ' V A ( t =0.254)

Contextual Info: 10 SIB NOTES 1. S E T I + I 5I067 i / ' J - X MATE WITH : 5 I06T SERIES 2. Wm MATERIAL E r I / \ - ; P B T P JUOTT1 5 % A U . U L 9 4 V - 0 WAFER : PBTP (G.F I5X), UL94V-0 EW PIN : A ' v Tt ) L T i± i iM 'v A ( t = o .2 5 4 ) : BRASS TIN OVER NICKEL PLATING <+=0.254)

LMBT3908LT1G

Abstract: 1AM 6 1AM c
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a • Pb−Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

1AM c

Abstract: 1AM marking transistor
Contextual Info: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

marking code 1AM

Abstract: 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am
Contextual Info: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)