1A DIODE LOW REVERSE CURRENT Search Results

Contextual Info: Ordering number : ENA1055B SBE807 Schottky Barrier Diode http://onsemi.com 30V, 1A, Low IR Applications • High frequency rectification switching regulators, converters, and choppers Features • Low switching noise • Low reverse current (VR=16V, IR max=15µA)

Contextual Info: SDB1040 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low power rectified High reliability Low forward voltage: VF=0.5V Typ. @ IF=1A Low reverse current: IR=4 ㎂ Typ. @ VR=40V

SDB130B

Contextual Info: SDB130B Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low switching loss High reliability Very low reverse current: IR=0.15mA Max. @ VR=30V Low forward voltage: VF=0.49V Max. @ IF=1A

10DDA40

Contextual Info: ｓ DIODE 10DDA40 Type : OUTLINE DRAWING 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.32g Rating

10DDA20

Contextual Info: ｓ DIODE 10DDA20 Type : OUTLINE DRAWING 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.32g Rating

10DDA60

Contextual Info: ｓ DIODE 10DDA60 Type : OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.32g Rating

3031-002

Abstract: 1A40 KSD303 KSD-3031-002
Contextual Info: SDB10A40 Semiconductor Schottky Barrier Diode Features • Low reverse current : IR = Typ. 10 ㎂ @ VR=40V • Low forward voltage : VF= max 0.55V (@ IF=1A) • High speed switching application Ordering Information Type No. SDB10A40 Marking Package Code

10DDA10

Contextual Info: ｓ DIODE 10DDA10 Type : OUTLINE DRAWING 1A 100V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.32g Rating

10EDB

Contextual Info: ｓ DIODE 10EDB60 Type : OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

10EDB40

Contextual Info: ｓ DIODE Type : 10EDB40 OUTLINE DRAWING 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

10EDA40

Contextual Info: ｓ DIODE 10EDA40 Type : OUTLINE DRAWING 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

10JDA40

Contextual Info: ｓ DIODE Type : 10JDA40 OUTLINE DRAWING 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g

Contextual Info: ｓ DIODE 10EDB20 Type : OUTLINE DRAWING 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

10JDA60

Contextual Info: ｓ DIODE Type : 10JDA60 OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g

10EDB10

Contextual Info: ｓ DIODE 10EDB10 Type : OUTLINE DRAWING 1A 100V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

10EDB60

Contextual Info: ｓ DIODE Type : 10EDB60 OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

10EDA

Contextual Info: ｓ DIODE 10EDA 10EDA60 Type : OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

Contextual Info: SDB1040 Semiconductor Schottky Barrier Diode Applications PIN Connection • Portable equipment battery applications • SMPS applications Features • • • • 2 Low power rectified High reliability Low forward voltage: VF=0.5V Typ. @ IF=1A Low reverse current: IR=4 ㎂ Typ. @ VR=40V

BAS3010A-03W

Contextual Info: BAS3010A. Low VF Schottky Diode Preliminary data • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ I F = 1A • For high efficiency DC / DC conversion, fast switching, protection and clamping applications BAS3010A-03W

R2M diode

Abstract: Diode R2M std 202e 202E
Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LTD. R2M OVER VOLTAGE PROTACTION DIODE TECHNICAL SPECIFICATION BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A FEATURES DO - 15 • Excellent clamping capability • Low incremental surge resistance • High temperature soldering guaranteed:

Contextual Info: BAT20J HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 23 V IR 25°C(max) @ 15V 12 µA Tj (max) 150 °C A FEATURES AND BENEFITS Low conduction losses Very low reverse current Negligible switching losses

BAT20JFILM

Abstract: BAT20J ST Low Forward Voltage Schottky Diode sod 323 STMicroelectronics 022 marking
Contextual Info: BAT20J HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 23 V IR 25°C(max) @ 15V 12 µA Tj (max) 150 °C A FEATURES AND BENEFITS Low conduction losses Very low reverse current Negligible switching losses

marking DIODE 2U 04

Abstract: DTDG23YP T100 marking 2U diode II1001 Diode marking CODE 5M
Contextual Info: DTDG23YP Transistors Digital transistor built-in resistors and zener diode , driver (60V, 1A) DTDG23YP zFeatures 1) High DC current gain. (Min. 300 at VO/IO=2V/0.5A) 2) Low output voltage. (Typ. 0.4V at IO/II=500/50mA) 3) Built-in zener diode gives strong protection against reverse.

BAS3010A-03W

Contextual Info: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ IF = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications BAS3010A-03W 1