1A DIODE LOW REVERSE CURRENT Search Results
1A DIODE LOW REVERSE CURRENT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
1A DIODE LOW REVERSE CURRENT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Ordering number : ENA1055B SBE807 Schottky Barrier Diode http://onsemi.com 30V, 1A, Low IR Applications • High frequency rectification switching regulators, converters, and choppers Features • Low switching noise • Low reverse current (VR=16V, IR max=15µA) |
Original |
ENA1055B SBE807 A1055-4/4 | |
Contextual Info: SDB1040 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low power rectified High reliability Low forward voltage: VF=0.5V Typ. @ IF=1A Low reverse current: IR=4 ㎂ Typ. @ VR=40V |
Original |
SDB1040 OD-123 KSD-D6B001-000 150onents | |
10DDA60Contextual Info: s DIODE 10DDA60 Type : OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.32g Rating |
Original |
10DDA60 10DDA60 | |
3031-002
Abstract: 1A40 KSD303 KSD-3031-002
|
Original |
SDB10A40 SDB10A40 OD-106 KSD-3031-002 3031-002 1A40 KSD303 KSD-3031-002 | |
10DDA10Contextual Info: s DIODE 10DDA10 Type : OUTLINE DRAWING 1A 100V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.32g Rating |
Original |
10DDA10 10DDA10 | |
10EDBContextual Info: s DIODE 10EDB60 Type : OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB60 10EDB60 10EDB | |
10EDA40Contextual Info: s DIODE 10EDA40 Type : OUTLINE DRAWING 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDA40 10EDA40 | |
Contextual Info: s DIODE 10EDB20 Type : OUTLINE DRAWING 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB20 10EDB20 | |
10EDB40Contextual Info: s DIODE 10EDB40 Type : OUTLINE DRAWING 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB40 10EDB40 | |
10EDB10Contextual Info: s DIODE 10EDB10 Type : OUTLINE DRAWING 1A 100V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB10 10EDB10 | |
10EDAContextual Info: s DIODE 10EDA 10EDA60 Type : OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDA 10EDA60 10EDA60 | |
Contextual Info: SDB1040 Semiconductor Schottky Barrier Diode Applications PIN Connection • Portable equipment battery applications • SMPS applications Features • • • • 2 Low power rectified High reliability Low forward voltage: VF=0.5V Typ. @ IF=1A Low reverse current: IR=4 ㎂ Typ. @ VR=40V |
Original |
SDB1040 OD-123 SDB1040 KSD-D6B001-001 | |
Contextual Info: BAT20J HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 23 V IR 25°C(max) @ 15V 12 µA Tj (max) 150 °C A FEATURES AND BENEFITS Low conduction losses Very low reverse current Negligible switching losses |
Original |
BAT20J OD-323 BAT20J OD-323 | |
in 4436
Abstract: 4436 SB10-015C
|
Original |
EN4436A SB10-015C SB10-015C-applied in 4436 4436 SB10-015C | |
|
|||
AN1471
Abstract: BYT01-400 BYT01-400RL
|
Original |
BYT01-400 DO-15 BYT01-400 DO-15) AN1471 BYT01-400RL | |
Contextual Info: SENSITRON SEMICONDUCTOR 1N6824-1 1N6824UR-1 TECHNICAL DATA DATASHEET: 320, REV. D ULTRA LOW REVERSE LEAKAGE SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 1A, 100 V Schottky Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode |
Original |
1N6824-1 1N6824UR-1 | |
ultra low forward voltage schottky diode
Abstract: ultra low forward drop schottky ultra low reverse current schottky ultra low drop forward voltage diode axial schottky diode 100V 1A
|
Original |
1N6824-1 1N6824UR-1 ultra low forward voltage schottky diode ultra low forward drop schottky ultra low reverse current schottky ultra low drop forward voltage diode axial schottky diode 100V 1A | |
SB10W05ZContextual Info: Ordering number : EN3876A Schottky Barrier Diode Twin Type • Cathode Common SB10W05Z 50V, 1A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). |
Original |
EN3876A SB10W05Z SB10W05Z | |
Contextual Info: Ordering number: EN4171A SB10W05V Schottky Barrier Diode Twin Type •Cathode Common 50V, 1A Rectifier Applications • High frequency rectification (switching regulators, converters and choppers). Features • Low forward voltage (Vy max = 0.55V). • Fast reverse recovery time (trr max = 10ns). |
OCR Scan |
EN4171A SB10W05V | |
IT00608
Abstract: IR300U
|
Original |
ENN6343 SBE002 SBE002] SBE002-applied IT00608 IR300U | |
SB10W05ZContextual Info: Ordering number : EN3876A Schottky Barrier Diode Twin Type • Cathode Common SB10W05Z 50V, 1A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). |
Original |
EN3876A SB10W05Z SB10W05Z | |
SBE002Contextual Info: Ordering number:ENN6343 Schottky Barrier Diode SBE002 50V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1295 [SBE002] 0.15 2.9 · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). |
Original |
ENN6343 SBE002 SBE002] SBE002-applied SBE002 | |
BAS3010A-03W
Abstract: marking AF BAR63-03W
|
Original |
BAS3010A. 010A-03W BAS3010A-03W OD323 50/60Hz, BAS3010A-03W marking AF BAR63-03W | |
Contextual Info: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ 1 F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1) |
Original |
BAS3010A. 010A-03W BAS3010A-03W OD323 50/60Hz, |