1A 700V MOSFET Search Results

Contextual Info: HY2N70T / HY2N70FT 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS ON =6.5W@VGS=10V, ID=1A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A

2N70M

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A

Contextual Info: SVD1N70M/SVD1N70T 1A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Contextual Info: AP01L60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated D ▼ Fast Switching Speed ▼ Simple Drive Requirement BVDSS 700V RDS ON 12Ω ID G 1A S Description The TO-252 package is universally preferred for all commercial-industrial

B11 marking code

Abstract: 1A 700V MOSFET mosfet 700V 2A
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

1A 700V MOSFET

Contextual Info: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power

POWER MOSFET 4600

Abstract: 1A 700V MOSFET
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Mosfet

Abstract: SSF11NS70UF
Contextual Info: SSF11NS70UF 700V N-Channel MOSFET Main Product Characteristics VDSS 700V RDS on 0.45Ω (typ.) ID 11A Marking and Pin TO220F Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 1.3 LU U LU qwe 0 ' q w e r q O- ' V dss . . 700V . 9.75Í1

FS2VS-14A mosfet

Abstract: FS2VS-14A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING L q Dimensions in mm J w e •V o +i CD O w r ' V dss . . 700V ' rDS ON (MAX) .9.75Q ' I d . .2A oi q w e

1A 700V MOSFET

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A • Voss OUTLINE DRAWING . Dimensions in mm 700V • rDS ON (MAX) . 9 .7 5 Q

Contextual Info: MITSUBISHI Neh POWER MOSFET I j FS2UM-14A ! HIGH-SPEED SWITCHING USE FS2UM-14A • VDSS . -700V • rDS ON (MAX) . 9.75Í2 • I D . 2A

Contextual Info: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power

65w 20v smps

Abstract: FS2UM-14A 1A 700V MOSFET
Contextual Info: MITSUBISHI Nch POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

700v 5A mosfet

Contextual Info: SSFP2N70 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 700V Simple Drive Requirement ID25 = 2.1A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

700v 5A mosfet

Contextual Info: MP020-5 Offline, Primary-Side Regulator with CC/CV Control and a 700V FET The Future of Analog IC Technology DESCRIPTION FEATURES The MP020-5 is an offline, primary-side regulator that provides accurate constant voltage and constant current regulation without

FS2KM-14A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 700V

FS2AS-14A

Abstract: 1A 700V MOSFET
Contextual Info: MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE FS2AS-14A OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 4 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 0.5 ± 0.2 2.3 0.8 1 2 3 wr q w e r q ¡VDSS . 700V

Contextual Info: MP020-5 Offline, Primary-Side Regulator with CC/CV Control and a 700V FET The Future of Analog IC Technology DESCRIPTION FEATURES The MP020-5 is an offline, primary-side regulator that provides accurate constant voltage and constant current regulation without

samsung roadmap

Abstract: MP6930 MP4050 MP44011 MP6923 HFC0500
Contextual Info: Monolithic Power Systems New Product for ACDC and Lighting Field Date: May 22, 2013 Confidential –Not approved for copy or Distribution The Future of Analog IC Technology ® Agenda: LED Lighting • Product Update of MPS Indoor Lighting – Non-dimming, Non-PFC

1N65

Abstract: RD300
Contextual Info: Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 1/8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN1N65I3 BVDSS : 700V @Tj=150℃ RDS ON : 9.5Ω ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

transistor 1000V

Abstract: RURP1580
Contextual Info: m h a rp u s c ti RURP1570, RURP1580 RURP1590, RURP15100 15A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features • Ultrafast with Soft Recovery Characteristic tRR< 100ns JEDEC T0-220AC TOP VIEW • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V

Contextual Info: ÍS1HARRIS 8' RURG1570CC, RURG1580CC, RURG1590CC, RURG15100CC Aprii 1995 1 5A, 700V - 1 0OOV Ultrafast Dual Diodes Package Features JEDEC STYLE TO-247 • Ultrafast with Soft R ecovery. <100ns ANO DE 1 • Operating T em p eratu