1A 300V MOSFET Search Results

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: Data Sheet 10V Drive Nch MOSFET RDD020N60  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

Contextual Info: SID10N30-600I 7.5A, 300V, RDS ON 600 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-251P DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and

Contextual Info: Single N-channel MOSFET ELM32434LA-S •General description ■Features ELM32434LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=2A • Rds(on) < 4.4Ω (Vgs=10V) ■Maximum absolute ratings

Contextual Info: Single N-channel MOSFET ELM32434LA-S •General description ■Features ELM32434LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=2A • Rds(on) < 4.4Ω (Vgs=10V) ■Maximum absolute ratings

Contextual Info: SDU/D02N60A Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES Low Crss typical 3pF . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 600V 2A 4.4 @ VGS=10V,ID=1A G Fast Switching. 100% Avalanche Rated. G D S STU SERIES

P0260AD

Contextual Info: シングル N チャンネル MOSFET ELM32434LA-S •概要 ■特長 ELM32434LA-S は低入力容量 低電圧駆動、 低 ・ Vds=600V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=2A ・ Rds on < 4.4Ω (Vgs=10V) ■絶対最大定格値

RT9593

Abstract: 100uF 300V capacitor GSD2004S photoflash charger 513 RT95
Contextual Info: RT9593 MOSFET Integrated Smart Photoflash Capacitor Charger with IGBT Driver General Description Features The RT9593 is a complete photoflash module solution in digital and film cameras. It is targeted for applications that use either two AA batteries or single lithium-ion battery.

K3050

Abstract: 2sk3050
Contextual Info: 2SK3050 Transistors 10V Drive Nch MOS FET 2SK3050 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

ELM32434LA

Contextual Info: 单 N 沟道 MOSFET ELM32434LA-S •概要 ■特点 ELM32434LA-S 是 N 沟道低输入电容，低工作电压， •Vds=600V 低导通电阻的大电流 MOSFET。 ·Id=2A ·Rds on < 4.4Ω (Vgs=10V) ■绝对最大额定值 项目 如没有特别注明时, Ta=25℃

Contextual Info: SDU/D01N60A Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS 600V Low Crss typical 2pF . R DS(ON) (m Ω) Max ID 1.1A Fast Switching. 100% Avalanche Rated. 9.3 @ VGS=10V,ID=0.55A G G D

SSR -100 DD

Abstract: MOSFET IRF VDs 600v SSR -25 DD POWER MOSFET Rise Time irf power mosfet
Contextual Info: SSR/U1N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ ^DS on = Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V

Contextual Info: Models with Standards Certification Nov. 2012 Consult your OMRON sales representative for specific models with standard approvals. CONNECTOR ●PCB CONNECTOR Model Standards Number of poles Standard No. Rating XG4AXG4C UL Approved Models Recognized 10 14、16、20 、26 、30 、34 、40 、50 、60 、64 E103202（UL1977）

Contextual Info: シングル N チャンネル MOSFET ELM3C1260A •概要 ■特長 ELM3C1260A は低入力容量 低電圧駆動、 低 ON ・ Vds=600V 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=12A ・ Rds on < 0.65Ω (Vgs=10V) ■絶対最大定格値

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

1N65

Abstract: RD300
Contextual Info: Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 1/8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN1N65I3 BVDSS : 700V @Tj=150℃ RDS ON : 9.5Ω ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

Contextual Info: SVD1N70M/SVD1N70T 1A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Contextual Info: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

diode TA 20-08

Contextual Info: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power

Contextual Info: RDD022N60 Nch 600V 2A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 6.7W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

U1N60

Abstract: as58
Contextual Info: PJU1N60 T O- 25 1 600V N-Channel Enhancement Mode MOSFET FEATURES TO -2 5 1 • 1A, 600V, RDS ON =11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS

MOSFET 600V 1A

Abstract: BALLAST CFL
Contextual Info: MPK02N6 N-Channel POWER MOSFET Features 600V, 1A, Typical Rds on = 7Ω Extremely High dv/dt Capability 100% Avalanche Tested New High Voltage Benchmark Gate Charge Minimized Application Low Power Battery Chargers Swith Mode Low Power Supplies Low Power, Ballast, CFL(Compact