1A 200V DIODE Search Results

reverse bias diode characterstics

Abstract: rfl1n18 AN7254 AN7260 RFL1N20 TB334
Contextual Info: RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: W vys S RFL1N18, RFL1N20 S e m ico n d ucto r 7 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 180V and 200V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFL1N18, RFL1N20 S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

PNP 200V 2A SOT89

Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
Contextual Info: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

TS16949

Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

ERB35

Contextual Info: ERB35 1A ( 200V / 1A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications Lot No. High speed switching 種 機 Maximum ratings and characteristics

10MSA

Contextual Info: ERB35 1A ( 200V / 1A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications Lot No. High speed switching 70 B35 -02 •·· Abridged type name

Contextual Info: ERB35 1A ( 200V / 1A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications Lot No. High speed switching e d 定 予 new Absolute maximum ratings

ERB35

Abstract: marking code b35 10MSA
Contextual Info: ERB35 1A ( 200V / 1A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 25 MIN. 25 MIN. Marking Features Soft recovery, low noise Color code : Orange High reliability Voltage class Applications Lot No. High speed switching 70 B35 -02 •·· Abridged type name

ZXTN4006ZTA

Abstract: ZXTN4006Z
Contextual Info: A Product Line of Diodes Incorporated ZXTN4006Z 200V NPN LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > 200V Max continuous current IC = 1A hFE > 100 @ IC = 150mA, VCE = 320mV Lead Free, RoHS Compliant Note 1

Contextual Info: A Product Line of Diodes Incorporated ZXTN4006Z 200V NPN LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > 200V Max continuous current IC = 1A hFE > 100 @ IC = 150mA, VCE = 320mV Lead Free, RoHS Compliant Note 1

DIODE D1F20

Abstract: D1F20
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS D1F20 Case : 1F Unit : mm 200V 1A FEATURES High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

ROD20

Contextual Info: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications

BA201

Abstract: 10MSA
Contextual Info: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications

Contextual Info: SHINDENGEN Bridge Diode Single In-line Package OUTLINE DIMENSIONS S1VBA20 Case : 1V Unit : mm 200V 1A FEATURES ●Small Single In-Line :SIL Package ●High IFSM ●Applicable to Automatic Insertion APPLICATION ●Switching power supply ●Home Appliances, Office Equipment

P008B DIODE

Abstract: STN1N20
Contextual Info: STN1N20 N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223 POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STN1N20 • ■ ■ ■ ■ ■ V DSS R DS on I D CONT 200 V < 1.5 Ω 1A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED

Contextual Info: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications

10EDB20

Contextual Info: ｓ DIODE Type : 10EDB20 OUTLINE DRAWING 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

10JDA20

Contextual Info: ｓ DIODE 10JDA20 Type : OUTLINE DRAWING 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g

10EDA20

Contextual Info: ｓ DIODE 10EDA20 Type : OUTLINE DRAWING 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g

DIODE N20

Contextual Info: RFL1N18, RFL1N20 HARRIS S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS D1N20 Unit : mm 200V 1A FEATURES High voltage High reliability with superior moisture resistance 5 mm pitch mounting applicable APPLICATION Conventional Rectification Power source(Power Supply)