1A, GATE DRIVER Search Results

SNVS369

Abstract: LM5109
Contextual Info: LM5109 LM5109 100V / 1A Peak Half Bridge Gate Driver Literature Number: SNVS369 LM5109 100V / 1A Peak Half Bridge Gate Driver General Description The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel

SNVS477A

Contextual Info: LM5109B LM5109B High Voltage 1A Peak Half Bridge Gate Driver Literature Number: SNVS477A LM5109B High Voltage 1A Peak Half Bridge Gate Driver General Description The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel

mlp8 Package

Abstract: mlp8 land pattern MLP8 FOOTPRINT fairchild MLP8 FAN3111C
Contextual Info: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description • •     1.4A Peak Sink / Source at VDD = 12V The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications.

MLP8 FOOTPRINT

Abstract: boost converter sot23-5 "internal mos" AP015 FAN3111E FAN3111C
Contextual Info: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description • •     1.4A Peak Sink / Source at VDD = 12V The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications.

Contextual Info: LM5100A,LM5100B,LM5100C,LM5101A,LM5101B, LM5101C LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers Literature Number: SNOSAW2M August 20, 2011 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers General Description

MLP8 package

Abstract: MLP8 FOOTPRINT FAN3111C
Contextual Info: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description ƒ ƒ ƒ ƒ ƒ The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications. 1.4A Peak Sink / Source at VDD = 12V 1.1A Sink / 0.9A Source at VOUT = 6V

MLP8 FOOTPRINT

Abstract: soic8 footprint mlp8 land pattern mlp8 FAN3111ESX fan3111c 7A SOIC8 FAN3111 sot23-5 mosfet driver FAN3111CSX
Contextual Info: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description ƒ ƒ ƒ ƒ ƒ The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications. 1.4A Peak Sink / Source at VDD = 12V 1.1A Sink / 0.9A Source at VOUT = 6V

NTE7426

Abstract: NTE7432 NTE74LS32 NTE7438 NTE7441 NTE74C30 NTE7427 NTE7440 NTE74HC32 nte7437
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7425 14-Lead DIP, See Diag. 247 Dual 4—Input Positive NOR Gate w/Strobe NTE7426, 14-Lead DIP, See Diag. 247 NTE74LS26 Quad 2-Input High Voltage Interface NAND Gate 1A ^ V^ ~ 1B 3 B Q Vcc 1a g Q 4B

Contextual Info: OBSOLETE LM5109 www.ti.com SNVS369 – APRIL 2005 LM5109 100V / 1A Peak Half Bridge Gate Driver Check for Samples: LM5109 FEATURES 1 • 2 • • • • • • Drives both a high side and low side NChannel MOSFET 1A peak output current 1.0A sink / 1.0A

Contextual Info: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

IRFD110

Abstract: IRFD110 91 TA17441 TB334
Contextual Info: IRFD110 Data Sheet January 2002 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 1A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

an7254

Abstract: RFL1P10 RFL1P08
Contextual Info: RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

tc140g

Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
Contextual Info: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.

reverse bias diode characterstics

Abstract: rfl1n18 AN7254 AN7260 RFL1N20 TB334
Contextual Info: RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the

WSON8

Contextual Info: NRND LM5109 www.ti.com SNVS369 – APRIL 2005 LM5109 100V/1A Peak Half Bridge Gate Driver Check for Samples: LM5109 FEATURES PACKAGE • • • 1 2 • • • • • • • • • Drives Both a High Side and Low Side NChannel MOSFET 1A Peak Output Current 1.0A Sink / 1.0A

Contextual Info: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the

Contextual Info: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the

l5109

Abstract: L5109BMA 5109BSD BMA Electronics
Contextual Info: LM5109B www.ti.com SNVS477A – FEBRUARY 2007 – REVISED MARCH 2007 LM5109B High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109B FEATURES DESCRIPTION • The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the

Contextual Info: YD8316 YOUDA INTEGRATED CIRCUIT IGBT GATE DRIVER—YD8316 DESCRIPTION The YD8316 is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT FEATURES *Can directly control from a micro-controller, *Can directly drive the IGBT gate using a high current. Source current: -200mA max , sink current 1A(max),

IRFD110

Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
Contextual Info: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

RFL1N10L

Abstract: AN7254 AN7260
Contextual Info: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET August 1999 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special

RFL1N10L

Abstract: AN7254 AN7260
Contextual Info: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET September 1998 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special

AN7254

Abstract: 1N08 AN7260 RFL1N08 RFL1N10
Contextual Info: S RFL1N08, RFL1N10 S e m ico n d ucto r 7 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs September 1998 Features Description • 1A, 80V and 100V These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as