1A, GATE DRIVER Search Results

SNVS369

Abstract: LM5109
Contextual Info: LM5109 LM5109 100V / 1A Peak Half Bridge Gate Driver Literature Number: SNVS369 LM5109 100V / 1A Peak Half Bridge Gate Driver General Description The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel

SNVS477A

Contextual Info: LM5109B LM5109B High Voltage 1A Peak Half Bridge Gate Driver Literature Number: SNVS477A LM5109B High Voltage 1A Peak Half Bridge Gate Driver General Description The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel

mlp8 Package

Abstract: mlp8 land pattern MLP8 FOOTPRINT fairchild MLP8 FAN3111C
Contextual Info: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description • •     1.4A Peak Sink / Source at VDD = 12V The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications.

Contextual Info: LM5100A,LM5100B,LM5100C,LM5101A,LM5101B, LM5101C LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers Literature Number: SNOSAW2M August 20, 2011 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers General Description

MLP8 package

Abstract: MLP8 FOOTPRINT FAN3111C
Contextual Info: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description ƒ ƒ ƒ ƒ ƒ The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications. 1.4A Peak Sink / Source at VDD = 12V 1.1A Sink / 0.9A Source at VOUT = 6V

NTE7426

Abstract: NTE7432 NTE74LS32 NTE7438 NTE7441 NTE74C30 NTE7427 NTE7440 NTE74HC32 nte7437
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7425 14-Lead DIP, See Diag. 247 Dual 4—Input Positive NOR Gate w/Strobe NTE7426, 14-Lead DIP, See Diag. 247 NTE74LS26 Quad 2-Input High Voltage Interface NAND Gate 1A ^ V^ ~ 1B 3 B Q Vcc 1a g Q 4B

IRFD110

Abstract: IRFD110 91 TA17441 TB334
Contextual Info: IRFD110 Data Sheet January 2002 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 1A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

tc140g

Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
Contextual Info: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.

lm5109

Contextual Info: NRND LM5109 www.ti.com SNVS369 – APRIL 2005 LM5109 100V/1A Peak Half Bridge Gate Driver Check for Samples: LM5109 FEATURES PACKAGE • • • 1 2 • • • • • • • • • Drives Both a High Side and Low Side NChannel MOSFET 1A Peak Output Current 1.0A Sink / 1.0A

Contextual Info: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the

WSON8

Contextual Info: NRND LM5109 www.ti.com SNVS369 – APRIL 2005 LM5109 100V/1A Peak Half Bridge Gate Driver Check for Samples: LM5109 FEATURES PACKAGE • • • 1 2 • • • • • • • • • Drives Both a High Side and Low Side NChannel MOSFET 1A Peak Output Current 1.0A Sink / 1.0A

Contextual Info: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the

Contextual Info: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the

l5109

Abstract: L5109BMA 5109BSD BMA Electronics
Contextual Info: LM5109B www.ti.com SNVS477A – FEBRUARY 2007 – REVISED MARCH 2007 LM5109B High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109B FEATURES DESCRIPTION • The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the

RFL1N10L

Abstract: AN7254 AN7260
Contextual Info: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET August 1999 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special

LM2510

Abstract: PSOP-81
Contextual Info: LM25101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers General Description The LM25101A/B/C High Voltage Gate Drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration.

SDC08A

Abstract: motor driver full bridge mosfet 10A 100V NMOSFET 50.0V motor driver full bridge 10A 100V AN-1187 ISL6700 LM5109 half bridge MOSFET driver IC LM5109MAX LM5109SD
Contextual Info: LM5109 100V / 1A Peak Half Bridge Gate Driver General Description The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with

Contextual Info: • M3DE571 005 471b 5T1 HAS RFL1N18L RFL1N20L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features TO-2Û5AF • 1A, 180V and 200V BOTTOM VIEW • rDS(ON) = 3.65H • Design Optimized for 5V Gate Drives GATE SOURCE

C2656

Abstract: 3A, 50V BRIDGE rectifier LM5100A LM5100B LM5100C LM5101A
Contextual Info: LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers General Description Features The LM5100A/B/C and LM5101A/B/C High Voltage Gate Drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a

llp-8

Abstract: lm5109b AN-1187 ISL6700 LM5109BMA LM5109BMAX LM5109BSD LM5109BSDX M08A
Contextual Info: LM5109B High Voltage 1A Peak Half Bridge Gate Driver General Description The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with

RFL1N10

Contextual Info: Hormis S RFL1N08L, RFL1N10L S e m ico n d ucto r 7 1A, 80V and 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 80V and 100V RFL1N08L TO -205AF RFL1N08L These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use

Contextual Info: March 28, 2012 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers General Description The LM5100A/B/C and LM5101A/B/C High Voltage Gate Drivers are designed to drive both the high-side and the lowside N-Channel MOSFETs in a synchronous buck or a halfbridge configuration. The floating high-side driver is capable

Contextual Info: W vys S RFL1N12L, RFL 1N15L S e m ico n d ucto r 7 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 120V and 150V RFL1N12L TO -205AF RFL1N12L These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use

Contextual Info: May 31, 2012 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers General Description The LM5100A/B/C and LM5101A/B/C High Voltage Gate Drivers are designed to drive both the high-side and the lowside N-Channel MOSFETs in a synchronous buck or a halfbridge configuration. The floating high-side driver is capable