1V4260 Search Results

*v4260

Contextual Info: O K I Semiconductor MSM5 1V4260 /SL_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 1V4260/SL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the M SM 1V4260/SL is OKI's CMOS silicon gate process

Contextual Info: O K I Semiconductor MSM5 1V4260/SL_ 262,144-Word x 16-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The M SM 1V4260/SL is a 262,144-w ord X 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The M SM 1V4260/SL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The M SM 1V4260/SL is

Contextual Info: O K I Semiconductor MSM5 1V4260 /SL_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D E S C R IP T IO N The 1V4260/SL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the 1V4260/SL is OKI's CMOS silicon gate process

Contextual Info: 1V4260B Series HYUNDAI 256Kx 16-bit CMOS DRAM with 2CAS DESCRIPTION The 1V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve

4680M

Abstract: AAU2 AAU27
Contextual Info: 1V4260B Seríes “H Y U N D A I 256K X 16-bit CMOS DRAM with 2CAS DESCRIPTION The 1V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve