1N3879 Search Results

LV 1084

Abstract: 1N3863 1N3660 R00601DF R006AADF S00601DF S00602DF S00603DF S00604DF S006AADF
Contextual Info: A2 D E lE 4 3 D D D h □□□□□at, I I 1 2430006 C00RS COMPONENTS INC Silicon Rectiflers/Fast Recovery Series 006 1N3879-1N3883 C A M P A v g ; VnRM up to 400 Volts - . _ 820 00086 D T ' û j - / 7 • 6 Amperes Average, Tc = 100°C ■ 300 Nanoseconds Recovery Time at 20 Amperes

1N3879

Abstract: 1N3880 1N3881 1N3882 1N3883
Contextual Info: PRELIMINARY r SOLID STATE DEVICES, INC % 1N3879 thru 1N3883 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 77^ 6 AMPS 50-400 VOLTS 120 nsec FAST RECOVERY RECTIFIER Designer’s Data Sheet FEATURES: • ■

MIL-S-19500

Abstract: 1N93A 2N78A 1N4148 JANTX 1N1206A JANTX 1N3713 1N4532 1N4148 JAN IN1614 1N1184
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 5 TO 12 AM PERES 1N1612-16 1N1341A-48A 1N3987-90 JEDEC — GE T Y P E S — 1N3879-83 — 1N1199A-1206A 1M3670A-73A 1N3889-93 1N5331 1N4510-11 A28F-D A129E-PB 12 12 12 12 100 135 65 135 — — E LE C T R IC A L S P E C IFIC A T IO N S

1N3882

Abstract: D1N3879 1N3879 1N3880 1N3881 1N3883 11714-B
Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 00117CH 2 1N3879 to 1N3883 ^ T - û 3 - l 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a D O —4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristor inverters and multi-phase power rectifier applications.

1N3881

Abstract: 1N3883 1N3879 1N3880 1N3882
Contextual Info: bbS3T31 DL.E D N AMER P H I L I P S / D I S C R E T E 00117CH E 1N3879 to 1N3883 . T - Û 3 - I 9 FA ST S O F T -R E C O V E R Y RECTIFIER DIO D ES Silicon diodes, each in a D O - 4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

msc stud diode

Abstract: 1n3883 1n3881
Contextual Info: 1N3879 R – 1N3883(R) Available on commercial versions FAST RECOVERY RECTIFIERS DESCRIPTION This 1N3879 – 1N3883 rectifier device is suitable for applications in DC power supplies, inverters, converters, choppers and ultrasonic systems as well as other applications. It can

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

Contextual Info: [ZT SGS-THOMSON ^ 7 # . ra«mi@TO » g® 1N 3879 -» 1N 3883 FAST RECOVERY RECTIFIER DIODES • FAST RECOVERY TIME ■ LOW FORWARD RECOVERY TIME APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS ■ HIGH FREQUENCY RECTIFIERS

1N3880 "on semiconductor"

Abstract: DO4-S16-1000-50 1n3903 diode s16 transistor DO5-S20-300-200 1N3990
Contextual Info: POWER RECTIFIERS 6 AMP TO 70 AMP STANDARD, FAST, ULTRA-FAST RECOVERY SUSSEX SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 DO-4 DO-5 GLASS PASSIVATED DO-4 AND DO-5 RECTIFIERS TOP 100-1000 VOLTS

1N3812

Abstract: 1N3685 1N3702 1N3707 1N3678 1N3679 1N3680 1N3681 1N3682 1N3683
Contextual Info: Zener Type No. Max. Zener Impedance @ Ut Ohms Zener Voltage Tolerance No Suffix = 2 0 % Suffix A =i 1 0 % Suffix B = 5 % /, „ 9.1 10.0 11.0 14.0 12.5 11.5 7.5 8.5 9.5 12.0 13.0 15.0 10.5 9.5 8.5 11.5 13.0 16.0 16.0 18.0 20.0 7.8 7.0 6.2 1N3087 1N3688 1N3689

Contextual Info: NICROSEMI CORP STE D • bllSfltiS 0 0 0 n 7 t i 1 N 3 07b ■ 8 NSC 7 9 thru Microsemi Corp. 1 N S A M A . t V. -l. CA 3 8 8 3 SC ' O H SHALL. A Z For more information call: 602 941-6300 FEATURES 6 AMP SILICON FAST RECOVERY RECTIFIER • < 0 .3 /uSEC R E C O V E R Y T I M E

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

2SA1046

Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275

do213ab

Abstract: do215 MS10411 SCR 30A 100V microsemi cross index X3420 Bridge Rectifier, 35A, 600V DO215AA 1N5823 scr 1a 1200V
Contextual Info: POWER CONDITIONING PRODUCT SELECTION GUIDE Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules 9-10 Hermetic Power Packages

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

K40UF

Abstract: SV0200-2 300F2 ER3001 300L2 1NS417 ER3004 SV0200
Contextual Info: HIGH•SPEED DIODES Item Number Part Number 10 Max A VAAM (V) trr Max (s) VF IF Max @ Test (V) (A) Package Style High-Speed Diodes, General-Purpose (Cont'd) BY29S 2.0 100 1.3 3.0 00-27 . 1S0 SOOn SV01S0-2 2.0 1.1 2Sn 2.0 00-41 S 10 SV0200-2 2PFF2 1N4942 BY297

2N6277

Abstract: 2N6274 2N6275 2N6277 applications transistor 2N6274 1N3879 2N6377 MOTOROLA 2N6277
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274