19SEP2005 Search Results

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

ESDA14V2-4BF3

Contextual Info: ESDA14V2-4BF3 ASD Application Specific Devices Quad bidirectional TRANSIL array for ESD protection Application Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers ■ Printers ■ Communication systems and cellular phones

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet High performance SMD LED with Reflector 96-22SURC/S530-XX Features White package. Dual-chip, wide-angle, low-profile LEDs . Excellent chip to chip consistency Super Intensity Highperformance Pb-free. The product itself will remain within RoHS

Contextual Info: SN74ALS233B 16 x 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SCAS253B – MARCH 1990 – REVISED APRIL 1998 D D D D D D Independent Asychronous Inputs and Outputs 16 Words by 5 Bits Data Rates From up to 40 MHz Fall-Through Time 14 ns Typ 3-State Outputs Package Options Include Plastic

Contextual Info: bq27000, bq27200 www.ti.com SLUS556C – SEPTEMBER 2004 – REVISED JUNE 2005 SINGLE CELL Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS bqJUNIOR FEATURES • • • • • • • • • • • • • – Data Retention: < 20 nA 2

Contextual Info: TLC2932 HIGH-PERFORMANCE PHASE-LOCKED LOOP SLAS097E – SEPTEMBER 1994 – REVISED MAY 1997 D D D D D D D D Voltage-Controlled Oscillator VCO Section: – Complete Oscillator Using Only One External Bias Resistor (RBIAS) – Lock Frequency: 22 MHz to 50 MHz (VDD = 5 V ±5%,

Contextual Info: OPA227 OPA2227 OPA4227 OPA 4 227 OPA 227 OPA 2 227 OPA 42 OPA2 27 OPA228 27 OPA2 227 OPA2228 OPA4228 SBOS110A – MAY 1998 – REVISED JANUARY 2005 High Precision, Low Noise OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION ● LOW NOISE: 3nV/√Hz ● WIDE BANDWIDTH:

Contextual Info: TLC227x, TLC227xA Advanced LinCMOS RAILĆTOĆRAIL OPERATIONAL AMPLIFIERS ąą SLOS190G − FEBRUARY 1997 − REVISED MAY 2004 D D D D D D D Output Swing Includes Both Supply Rails Low Noise . . . 9 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ

Contextual Info: TMS320VC5510/5510A Fixed-Point Digital Signal Processors Data Manual Literature Number: SPRS076L June 2000 − Revised September 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments

12 sot23-3

Abstract: TRANSISTOR Outlines 12 sot23 marking code 10 sot23 STM1001SBWX6F STM1001 N1418 13 SOT23-3
Contextual Info: STM1001 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Open drain RST output ■ 30 ms or 140 ms reset pulse width min ■ Low supply current - 6 µA (typ) ■ Guaranteed RST assertion down to VCC= 1.0 V ■ Operating temperature:

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT K 1603 24v
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Features • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks

Contextual Info: SN74ALS233B 16 x 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SCAS253B – MARCH 1990 – REVISED APRIL 1998 D D D D D D Independent Asychronous Inputs and Outputs 16 Words by 5 Bits Data Rates From up to 40 MHz Fall-Through Time 14 ns Typ 3-State Outputs Package Options Include Plastic

Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5V±10% supply voltage for program, erase and read operations ■ Access time: 45ns ■ Programming time – 8µs per Byte/Word typical ■

M29F200BB

Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Features • Single 5V±10% supply voltage for Program, Erase and Read operations ■ Access time: 45, 50, 70, 90ns ■ Programming time – 8µs per Byte/Word typical

C101

Abstract: SN74LVC2G00WDCTREP SN74LVC2G00W-EP
Contextual Info: SN74LVC2G00W-EP DUAL 2-INPUT POSITIVE-NAND GATE www.ti.com SCES645 – SEPTEMBER 2005 FEATURES • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 115°C

IC51-1324-828

Abstract: SN74ACT3638 SN74ACT3638-15PCB SN74ACT3638-15PQ
Contextual Info: SN74ACT3638 512 x 32 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCAS228D – JUNE 1992 – REVISED APRIL 1998 D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 512 × 32 Clocked FIFOs Buffering Data in Opposite Directions

DAC5675

Abstract: DAC5675A DAC5675-EP DAC5675MPHPREP IS-136
Contextual Info: DAC5675-EP www.ti.com SGLS285 – AUGUST 2005 14-Bit, 400 MSPS Digital-to-Analog Converter FEATURES • • • • • • • • 400-MSPS Update Rate Controlled Baseline – One Assembly – One Test Site – One Fabrication Site Extended Temperature Performance of -55°C

SN74LVC2G00W-EP

Contextual Info: SN74LVC2G00W-EP DUAL 2-INPUT POSITIVE-NAND GATE www.ti.com SCES645 – SEPTEMBER 2005 FEATURES • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 115°C

SN74LVC2G00W-EP

Contextual Info: SN74LVC2G00W-EP DUAL 2-INPUT POSITIVE-NAND GATE www.ti.com SCES645 – SEPTEMBER 2005 FEATURES • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 115°C

Contextual Info: ESDA6V1M6, ESDA6V1-5M6 4- and 5-line Transil arrays for ESD protection Features • High ESD protection level ■ High integration ■ Suitable for high density boards ■ 4 unidirectional Transil diodes ESDA6V1M6 ■ 5 unidirectional Transil diodes (ESDA6V1-5M6)

ST555

Abstract: M29W200BB
Contextual Info: M29W200BT M29W200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■

IEC-6100-4-2

Abstract: ESDA 35V IEC6100-4-2 JESD97 marking fm st 10 lead qfn package marking fm
Contextual Info: ESDA6V1xxM6 TRANSIL array for ESD protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: • Computers ■ Printers ■ Communication systems ■ Cellular phone handsets and accessories ■ Video equipment

Transil diodes

Abstract: IEC6100-4-2 JESD97 transil diode Mark 024 marking transil Marking STMicroelectronics QFN marking fm st 10 lead qfn package marking fm tape and reel part rotation qfn
Contextual Info: ESDALC6V1xxM6 4 and 5 line low capacitance TRANSIL array for ESD protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: • Computers ■ Printers ■ Communication systems ■ Cellular phone handsets and accessories

M29F002BB

Abstract: M29F002BNT M29F002BT PLCC32 TSOP32 CP 2AA
Contextual Info: M29F002BT, M29F002BNT M29F002BB, M29F002BNB 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45 ns ■ PROGRAMMING TIME – 8 µs by Byte typical ■ 7 MEMORY BLOCKS