19FEB2010 Search Results

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

Contextual Info: bq20z40-R1 SLUS993A – DECEMBER 2009 – REVISED MARCH 2011 www.ti.com SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 Check for Samples: bq20z40-R1 FEATURES APPLICATIONS • • • • 1 2 • • • •

zigbee based remote control

Abstract: sony led tv service manual SERVICE MANUAL tv sony ENC-MIC-32 STM32W108 zigbee user manual STM32W108 IAR CODES sony factory codes MB851 remote control with 4 channels RF remote control
Contextual Info: UM0909 User manual STM32W108xx ZigBee RF4CE library Introduction This document describes the ST RF4CE library and how to use it to develop RF4CE compliant applications on an STM32W device. The document describes initially the RF4CE protocol as defined by the ZigBee alliance and

VND5E025BK-E

Abstract: VND5E025BK CDM-AEC-Q100-011 7637-2 12V
Contextual Info: VND5E025BK-E Double channel high-side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch. RON 25 mΩ Current limitation (typ)

MEC 1300

Abstract: STAC4932 STAC4932B 1000WF
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European

Contextual Info: 70 MHz SAW Bandpass Filter 26 MHz bandwidth Part Number SF0070CF51851T TYPICAL PERFORMANCE Horizontal: 10 MHz/div Vertical from top : Magnitude Magnitude Phase Linearity Group Delay Deviation 10 1 8 30 dB/div dB/div deg/div ns/div SPECIFICATION Parameter

STB18NF25

Abstract: STD18NF25 18NF25
Contextual Info: STB18NF25, STD18NF25 N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET II Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features Type VDSS RDS on max ID PTOT STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω

MEC 1300

Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European

GR-1089

Abstract: tm 1621 ETP282
Contextual Info: ETP01-xx21 Protection for Ethernet lines Features • Differential and common mode protection ■ Telcordia GR1089 Intrabuilding: 150 A, 2/10 µs ■ ITU-T K20/21: 40 A, 5/310 µs ■ Low capacitance: 13 pF max at 0 V ■ UL94 V0 approved resin ■ SO-8 package is JEDEC registered

Contextual Info: THIS DRAWING IS UNPUBLISHED. GP COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 3 2 - ALL INTERNATIONAL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S P ELECTRICAL PROPERTIES CURRENT RATING 1 AMP INSULATION RESISTANCE > 5 x 1 0 9 OHMS @ 500 VDC

RM0017

Abstract: SPC560B40L3 SPC560B e6384 FlexCAN SPC560B40L3 NEXUS FLASH ERASE FB50X22X spc560b4x
Contextual Info: SPC560B4x/50 - SPC560C4x/50 Errata sheet 32-bit MCU family built on the Power Architecture embedded category for automotive body electronics applications Introduction This errata sheet describes all the known functional and electrical limitations of the

AN2348

Abstract: emif07 lcd02f3 EMIF07-LCD02F3 Marking STMicroelectronics year digit Z AN1751
Contextual Info: EMIF07-LCD02F3 7-line IPAD , EMI filter and ESD protection for LCD and cameras Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.94 mm x 1.54 mm Flip Chip (18 bumps)

Contextual Info: THIS DRAWING IS UNPUBLISHED. G V COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL INTERNATIONAL RIGHTS RESERVED. REVISIONS DIST GP 00 P ELECTRICAL PROPERTIES CURRENT RATING 1 AMP INSULATION RESISTANCE > 5 x 1 0 9 OHMS @ 500 VDC

BQ20Z40-R1

Contextual Info: bq20z40-R1 SLUS993A – DECEMBER 2009 – REVISED MARCH 2011 www.ti.com SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 Check for Samples: bq20z40-R1 FEATURES APPLICATIONS • • • • 1 2 • • • •

Contextual Info: LY330ALH MEMS motion sensor: high performance ±300 dps analog yaw-rate gyroscope The device includes a sensing element composed of a single driving mass, kept in continuous oscillation and capable of reacting, based on the Coriolis principle, when an angular rate is applied.

STAC4932

Abstract: STAC4932B 1715-3
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European

Contextual Info: EMIF07-LCD02F3 7-line IPAD , EMI filter and ESD protection for LCD and cameras Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.94 mm x 1.54 mm Flip Chip (18 bumps)

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

JN-AN-1038

Abstract: ST M25P10
Contextual Info: JN51xx Flash Programmer User Guide JN-UG-3007 Revision 2.2 11-Dec-2012 JN51xx Flash Programmer User Guide 2 NXP Laboratories UK 2012 JN-UG-3007 v2.2 JN51xx Flash Programmer User Guide Contents About this Manual 5 1 Introduction 7 2 Using the Flash Programmer GUI

ST 024

Abstract: tm 1621 diode Marking code A2 ETP01-xx21 ETP162 gigabit pulse transformer MARKING CODE SO-8 MIL grade RJ45 connectors GR-1089 marking 68
Contextual Info: ETP01-xx21 Protection for Ethernet lines Features • Differential and common mode protection ■ Telcordia GR1089 Intrabuilding: 150 A, 2/10 µs ■ ITU-T K20/21: 40 A, 5/310 µs ■ Low capacitance: 13 pF max at 0 V ■ UL94 V0 approved resin ■ SO-8 package is JEDEC registered

18NF25

Abstract: STB18NF25 STD18NF25
Contextual Info: STB18NF25 STD18NF25 N-channel 250 V, 0.14 Ω, 17 A DPAK, D2PAK low gate charge STripFET II Power MOSFET Features Type VDSS RDS on max ID PTOT STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω 17 A 110 W 3 • Low gate charge ■ 100% avalanche tested

Contextual Info: TPA2005D1-Q1 www.ti.com SLOS474C – AUGUST 2005 – REVISED MARCH 2010 1.4-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER Check for Samples: TPA2005D1-Q1 FEATURES 1 • • • • Qualified for Automotive Applications 1.4 W Into 8 Ω From a 5-V Supply at

Contextual Info: ETP01-xx21 Protection for Ethernet lines Features • Differential and common mode protection ■ Telcordia GR1089 Intrabuilding: 150 A, 2/10 µs ■ ITU-T K20/21: 40 A, 5/310 µs ■ Low capacitance: 13 pF max at 0 V ■ UL94 V0 approved resin ■ SO-8 package is JEDEC registered

STAC4932

Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European