19DEC2002 Search Results

M27W032

Contextual Info: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V

Contextual Info: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory PRELIMINARY DATA FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V

Contextual Info: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory PRELIMINARY DATA FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V

Contextual Info: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V

Contextual Info: REV. 05 DATE 10-03-99 17-12-01 DESCRI PT I ON Temperature range -55C inslead of -25C CONVERSION PDM - BEC 9.3573 K.N. NL BY C'K'D' W IR IN G FACE - ID < O _l t— EC LU — LU O CL or Q IU Q. 3 ID — CE 13 LJ CAT. NUMBER U T G 6 104SN UTG6125SN UTG6128SN

VFBGA60

Abstract: 7FF00
Contextual Info: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

Contextual Info: REV. DATE A I— — DESCRIPTION 17-12-01 BY CONVERSION PDM - BEC 9.357] C'K'D' NL U J< O _l CE LU LU O UTG6 104PN UTG6125PN CL 3 O CE 13 LU - — < Q CE U LU Q_ L J — UTG6128PN U TG6U12PN UTG61619PN U TG 61823PN UTG62028P UTG622 - z> cc - ce LU - O CD LU CE <

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC DIST AF 50 ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR DESCRIPTION N DWN DATE REVISED PER 0 G 3 A - 0 0 1 6 - 0 3 14FEB03 APVD JR GP D D C O N T IN U O U S 1 -.267-

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC DIST AF 50 ALL RIGHTS RESERVED. R EV IS IO N S LTR P1 1 D C O N T IN U O U S STANDARD '2' -.2 67- REVERSE 4 R E E LIN G O FF TO P OF R EEL W IR E B A R R E L UP

VFBGA60

Abstract: CR10 M58WR128EB M58WR128ET
Contextual Info: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)