1994C Search Results

nacho

Contextual Info: b q 2 0 1 1 BENCHMARQ Gas Gauge IC Features General Description >• Conservative and repeatable measurement of available charge in rechargeable batteries The bq2011 G els Gauge IC is intended far battery-pack installation to main­ tain an accurate record of a battery's

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

CLC111

Abstract: CLC111A8B CLC111AIB CLC111AJE CLC111AJP CLC111ALC CLC111AMC
Contextual Info: H Comlinear lU ^ S Ultra-High Slew Rate, Closed-Looped Buffer C O R P O R A T I O N CLC111 APPLICATIONS: FEATURES: • Video switch buffers • Test point drivers • Very wideband 800MHz • Ultra-high (3500V/|is) slew rate • Very low output impedance (1,4Q)

2VNL110A

Abstract: MQ 3 gas sensor
Contextual Info: bq2011 BENCHMARQ Gas Gauge IC Features General Description >• Conservative an d repeatable m easurem ent of available charge in rechargeable batteries The bq2011 Gas Gauge IC is intended for battery-pack installation to m ain ­ ta in an accurate record of a b attery’s

Contextual Info: b q 4 0 1 0 /b q 4 0 1 0 Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

bq4010Y-xxxN

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

bq4010

Abstract: bq4010-150 bq4010-85 bq4010Y bq4010Y-xxxN
Contextual Info: bq4010 /bq401 OY te il BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of pow er The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. T he integral control circuitry and lithium energy

MQ 6 gas sensor

Abstract: bq2011 S280 3dt1
Contextual Info: b q 2011 BENCHMARQ Gas Gauge IC Features General Description >• Conservative an d repeatable m easurem ent of available charge in rechargeable batteries The bq2011 Gas Gauge IC is intended for battery-pack installation to m ain­ ta in an accurate record of a b attery’s

equivalent transistor LM317T

Abstract: Philips 2322-640-63103 ba2003 U1 LM317 ln4148-type 78L05 cv
Contextual Info: BENCHMARQ_ Using the bq2003 to Control Fast Charge Introduction This application note describes the use and functions of the bq2003 gating a current source to fast charge NiCd or NiMH batteries. Examples describe th e ease with which the bq2003 is incorporated into applications.

NA66

Contextual Info: bq2011 BENCHMARQ Gas Gauge IC Features General Description ► Conservative and repeatable measurement of available charge in rechargeable batteries The bq2011 Gas Gauge IC is intended for battery-pack installation to main­ tain an accurate record of a battery’s

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,636-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: BENCHMARQ b q 2 1 Gas Gauge IC Features General Description >• Conservative and repeatable measurement of available charge in rechargeable batteries The bq2010 Gas Gauge IC is intended for battery-pack or in-sys­ tem installation to m aintain an accurate record of a b a tte ry ’s

Contextual Info: OAH, OAH3, OBH, OBH3 Series HCMOS/TTL Oscillator PART NUMBERING GUIDE C A L I B E R Lead-Free RoHS Compliant Electronics Inc. Environmental/Mechanical Specifications on page F5 OAH 100 48 A T - 30.000MHz Package OAH = OAH3 = OBH = OBH3 = Pin One Connection