1910 TM Search Results

Contextual Info: £ = 7 S G S -T H O M S O N TD A 1910 10W AUDIO AMPLIFIER WITH MUTING DESCRIPTION The TDA 1910 is a monolithic integrated circuit in MULTIWATT package, intended for use in Hi-Fi audio power applications, as high quality TV sets. The TDA 1910 meets the DIN 45500 d = 0.5%

FV1206

Abstract: HFCN-1910
Contextual Info: Ceramic HFCN-1910+ HFCN-1910 High Pass Filter 50Ω 2000 to 5200 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* 7W max. at 25°C * Passband rating, derate linearly to 3W at 100°C ambient.

00107

Contextual Info: WSD-00107 PCS Fullband Duplexer ◆ Features: • 40 dB Minimum Isolation • Very Low Insertion Loss - 0.55 dB Maximum • Low Profile, Compact Housing • Ideal for Microcell Requirements ◆ Specifications: Passbands: Receive Transmit 1850-1910 MHz 1930-1990 MHz

Contextual Info: WSD-00050 PCS Fullband Duplexer ◆ Features: • High Isolation - 95 dB Minimum • Low Insertion Loss - 0.6 dB typical • High Return Loss - 20 dB typical ◆ Specifications: Passbands: Receive 1850-1910 MHz Transmit 1930-1990 MHz Passband Insertion Loss:

Contextual Info: WSD-00010 PCS Fullband Duplexer ◆ Features: • 40 dB Minimum Isolation • Very Low Insertion Loss - 0.5 dB Maximum • Low Profile, Compact Housing • Ideal for Microcell Requirements * AVAILABLE FROM STOCK ◆ Specifications: Passbands: Receive 1850-1910 MHz

TMA CM

Abstract: Base Station TMA Tower Mounted Amplifiers DBD2102AAC TMA dual band Tower mounted Tower Mounted Amplifier tower mounting amplifier
Contextual Info: DBD2102AAC 1850-1990 MHz Dual Duplex Tower Mounted Amplifier RX 1850-1910 MHz TX 1930-1990 MHz Improves Base Station Sensitivity Reduces Co-Channel Interference • • • • Rugged Design For Reliability Built-in Lightning Protection Failsafe LNA Bypass 7/16 DIN Female

ZQL-1900MLN

Contextual Info: Coaxial ZQL-1900MLN+ ZQL-1900MLN Low Noise Amplifier 50Ω 1850 to 1910 MHz Features • very low noise, 1.5 dB max. • high IP3, +41 dBm typ. • rugged shielded case Connectors SMA Applications • PCS • UMTS • mobile satellite service CASE STYLE: CW686

HJK-19MH

Abstract: TTT167
Contextual Info: High IP3 HJK-19MH+ HJK-19MH Frequency Mixer Level 13 LO Power +13dBm 1850 to 1910 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C LO & RF Power • high IP3, 30 dBm typ. • compression, 3 dB higher than LO power

M121747

Abstract: ZQL-1900LN
Contextual Info: Coaxial Low Noise Amplifier 50Ω ZQL-1900LN+ 1850 to 1910 MHz Features • very low noise, 1.5 dB max. • high IP3, +37 dBm • rugged, shielded case Connectors SMA Applications CASE STYLE: CW686 Model Price Qty. ZQL-1900LN+ $249.00 ea. 1-9 + RoHS compliant in accordance

RS232 SIGNAL LEVEL

Abstract: MAX3313E nonpolarized MAX3311E MAX3311ECUB MAX3311EEUB MAX3313ECUB MAX3313EEUB MAX331 GPS receiver transmitter circuit
Contextual Info: 19-1910; Rev 0; 1/01 ±15kV ESD-Protected, 460kbps, 1µA, RS-232-Compatible Transceivers in µMAX The MAX3311E/MAX3313E are low-power, 5V EIA/TIA232-compatible transceivers. All transmitter outputs and receiver inputs are protected to ±15kV using the Human Body Model, making these devices ideal for

M121747

Abstract: MCA-19FLH
Contextual Info: High IP3 Frequency Mixer MCA-19FLH+ Level 10 LO Power+10 dBm 1850 to 1910 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C LO & RF Power 16 dBm Permanent damage may occur if any of these limits are exceeded.

MCA-19FH

Contextual Info: High IP3 MCA-19FH+ MCA-19FH Frequency Mixer Level 17 LO Power+17 dBm 1850 to 1910 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C LO & RF Power 20 dBm Permanent damage may occur if any of these limits are exceeded.

MCA-19FH

Contextual Info: High IP3 MCA-19FH+ MCA-19FH Frequency Mixer Level 17 LO Power+17 dBm 1850 to 1910 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C LO & RF Power 20 dBm Permanent damage may occur if any of these limits are exceeded.

HJK-21

Abstract: TTT167
Contextual Info: High IP3 HJK-21+ HJK-21 Frequency Mixer Level 7 LO Power +7 dBm 1850 to 1910 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C LO & RF Power +16 dBm • high IP3, 22 dBm typ. • compression, 3 dB higher than LO

HJK-21H

Abstract: TTT167
Contextual Info: High IP3 HJK-21H+ HJK-21H Frequency Mixer Level 17 LO Power +17 dBm 1850 to 1910 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C LO & RF Power • high IP3, 36 dBm typ. • compression, 3 dB higher than LO power

HJK-21MH

Abstract: TTT167
Contextual Info: High IP3 HJK-21MH+ HJK-21MH Frequency Mixer Level 13 LO Power +13 dBm 1850 to 1910 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C LO & RF Power • high IP3, 29 dBm typ. • compression, 3 dB higher than LO power

HJK-21LH

Abstract: TTT167
Contextual Info: High IP3 HJK-21LH+ HJK-21LH Frequency Mixer Level 10 LO Power +10 dBm 1850 to 1910 MHz Maximum Ratings Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C LO & RF Power Features • high IP3, 25 dBm typ. • compression, 3 dB higher than LO power

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

Contextual Info: 19-1910; Rev 0; 1/01 ±1 5 k V ESD-Prot e c t e d, 4 6 0 k bps, 1 µA, RS-2 3 2 -Com pa t ible Tra nsc e ive rs in µM AX The MAX3311E/MAX3313E are low-power, 5V EIA/TIA232-compatible transceivers. All transmitter outputs and receiver inputs are protected to ±15kV using the

Contextual Info: 光耦技术 已过时了 真空管 1910–1958 转轮式拨号电话 1920s–1980s 录像带 1970s–1990s 软盘 1980s–1990s 光耦 1960s–2009 来自Silicon Labs的ISOpro 系列—21世纪的隔离技术 TM 嗨，向光耦技术的种种局限带来的烦恼道别吧！现在您有了来自Silicon Labs的ISOpro。利用光耦合

Contextual Info: SAW Filters TMX S018 SAW Bandpass Filter - BASE STATION WCDMA - Tx IF Preliminary Specification Rev-4 Technical overview .P01 Matching Network Configuration .P01

gsm 1900

Contextual Info: SAW Filters TMX AF32 SAW Bandpass Filter – GSM 1900 Base Station – RF Preliminary Specification Rev. - Package Drawing & Pinout .P01

6602R

Abstract: DG09 MPR 55 AWU6601 AWU6602 AWU6602RM45P9 AWU6602RM45Q7
Contextual Info: AWU6602 HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes

WJ 5252 F

Abstract: AH110-89G AH110 AH110-89PCB1900 AH110-89PCB900 AH110G JESD22-A114 WJ 176
Contextual Info: AH110 The Communications Edge TM 0.2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 50 – 2000 MHz • +23 dBm P1dB • +39 dBm Output IP3 • 20.5 dB Gain @ 900 MHz • 17.6 dB Gain @ 1900 MHz • Single Positive Supply +8V