1902 TRANSISTOR Search Results

2N6794

Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Contextual Info: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds

sd 1476-1

Abstract: 1902 transistor SD1907 sd1912
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS [M lg fô O iU G IO T O iO Ê S RF & MICROWAVE TRANSISTORS 55 . 108 MHz Package Type SD SD SD SD 1476* 1 1457 1460 1483 (1) .2 X .450 SQ 4LFL .£00 4LFL .500 4LFL .2 X .450 SQ 4LFL Coinflg. CE CE CE CE Vcc pout

BF410C

Abstract: a5175
Contextual Info: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect

bf 671

Abstract: BF116 BFW93 667 2N BFW 72 NPN/bf 671 699 NPN 2N3571 ESM 182 BF183
Contextual Info: TO 18 CB 6 CB 146 f 139 B (CB 76) Silicon NPN transistors, VH F - UH F amplification and oscillation T8mb = 25 0C Transistors N P N silisium, amplification e i oscillation U H F et V H F Case T yp « Boitier ptot (mW) VCEO (V) f GP (dB) h 21 E min max >C

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

gd 361 transistor

Abstract: MOTOROLA 2N3902 2N3902
Contextual Info: MOTOROLA SC X S T R S /R F 15E D | b3b?2S4 QOñ45Q5 b | T - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3902 3.5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for use in high-voltage inverters, converters, switching

2sa925

Abstract: 2SC1901 2SA905 138B 309B
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2N6823

Abstract: transistor 3s4 2n6823 transistor AN569 motorola mosfet
Contextual Info: MOTOROLA SC X S T R S /R 1HE D I F b3fc>?254 G O f l i b m T 3 | S MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6823 Designer's Data Sheet Pow er Field Effect Transistor N -C h an n el Enh an cem en t-M ode S ilic o n G ate T M O S TMOS POWER FETs 3 AMPERES ros on = 2 8 OHMS

MRF6401

Contextual Info: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er am plifiers in the 1 .0 - 2 .0 GHz frequency range. It has been sp e cifica lly

mmbth10lt1

Contextual Info: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 M o t o r o la P r e f e r r e d D e v ic e 2 EMITTER CASE 318-08, STY LE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage

Contextual Info: MOTOROLA Order this document by BC161-16/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC161-16 COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit v CEO -6 0 Vdc Collector-Base Voltage v CBO -6 0

T2907A

Contextual Info: M O TO R O LA Order this document by MMBT2907LT1/D SEMICONDUCTOR TECHNICAL DATA M M B T 2907L T 1 M M B T2907A LT1* General Purpose Transistors PNP Silicon C0LLECT0R * Motorola Preferred Device % 2 EMITTER MAXIMUM RATINGS Rating Symbol 2907 2907A Unit Collector-Emitter Voltage

Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2749T NOISE FIGURE AND GAIN v *. FREQUENCY Vcc = 3.0 V FEATURES 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V LOW POWER CONSUMPTION: 18 mW TYP SUPER SMALL PACKAGE CD •o TAPE AND REEL PACKAGING OPTION AVAILABLE

UPC2749T

Abstract: UPC2749T-E3
Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2749T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V FEATURES • 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz • LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V 18 4.5 16 4.0 • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: APTC90TAM60TPG Triple phase leg Super Junction MOSFET Power Module VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features

strelaclock

Abstract: widerstandsnetzwerke service-mitteilungen robotron VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" servicemitteilungen RFT lautsprecher Mitteilung VEB RFT rft servicemitteilung
Contextual Info: Bellage zur SM 17-19/90_ ET-Eatalog 6, S elte 9 870 1997 875 1998 871 1999 22,0 33,0 100,0 Kohm N n 5 % 5 % 5 % S2-23-I S2-23-I S2-23-I Widerstandsnetzwerke 877 873 878 870 874 875 871 872 873 874 1903 1904 1905 1907 1906 1908 1909 1910

UPC2762T

Abstract: UPC2762T-E3 UPC2763T UPC2763T-E3 63T marking
Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB) • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)

UPC2762T

Abstract: UPC2762T-E3 UPC2763T UPC2763T-E3
Contextual Info: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB) • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)

Contextual Info: m • i E 0Ö1MSV7 nbbgo* 0DD07EÖ bfiZ AWT1902X TX POWER MMIC Advanced Product Information Your GaAs IC Source Rev 3 DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902X is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785

APT0502

Abstract: APTC80TDU15PG
Contextual Info: APTC80TDU15PG Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 G1 S1 /S2 D2 S1 D5 G3 S3/S4

DIODE S4 72A

Abstract: APT0502 APTC60TDUM35P APTC60TDUM35PG diode S6 72A
Contextual Info: APTC60TDUM35PG Triple dual Common Source VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Super Junction MOSFET Power Module G3 S1 S3 G5 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 G1 S1/S2 D2 S1 D5 G3

diode S6 72A

Abstract: DIODE S4 72A
Contextual Info: APTC60TDUM35PG Triple dual Common Source VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Super Junction MOSFET Power Module D1 D3 G1 G3 S1 S3 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies

DIODE S4 72A

Abstract: APTC60TAM35P APTC60TAM35PG
Contextual Info: APTC60TAM35PG Triple phase leg Super Junction MOSFET Power Module VBUS1 VBUS2 VBUS3 G1 G3 G5 S5 V W G2 G4 G6 S2 S4 S6 0/VBUS2 0/VBUS3 0/VBUS1 Features • • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated

SOT-363* marking c1z

Contextual Info: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER UPC2763TB GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA FEATURES • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB UPC2762T 20 UPC2763T Gain, GS (dB)