18A MARKING Search Results

20nf20

Abstract: 20NF2 STD20NF20
Contextual Info: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω

20nf20

Abstract: 20NF2 200v mosfet STD20NF20 st 20nf20
Contextual Info: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω

20NF2

Abstract: 20nf20 ct 1061 STF20NF20 L6PR STP20NF20 JESD97 STD20NF20
Contextual Info: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω

IRF640

Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Contextual Info: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Contextual Info: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

20NF2

Abstract: 20nf20
Contextual Info: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω

20NF2

Abstract: 20NF20 STD20NF20 STF20NF20 STP20NF20 JESD97
Contextual Info: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω • Exceptional dv/dt capability

18a marking sot23

Abstract: 18a sot23 marking 18A MMBZ5221B 18a marking marking 18a sot23
Contextual Info: SEMICONDUCTOR MMBZ5221B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 18A No. 1 Item Marking Device Mark 18A MMBZ5221B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Contextual Info: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/11716403/3000 mm 84013035 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance

Contextual Info: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/11N468/1500 mm 84013029 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance

Contextual Info: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/11N468/3000 mm 84013031 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance

Santoprene

Abstract: suco
Contextual Info: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/21N409/1500 mm 84013030 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance

Contextual Info: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/21716403/3000 mm 84013036 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance

Contextual Info: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/21716403/1500 mm 84013034 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance

STGF12NB60KD

Abstract: JESD97 STGB12NB60KD STGP12NB60KD
Contextual Info: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V

st 393

Abstract: JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS
Contextual Info: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V

DH2x60-18A

Abstract: DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6
Contextual Info: DH2x60-18A tentative V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A tbd ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package:

Contextual Info: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDS8870 N-Channel PowerTrench MOSFET tm 30V, 18A, 4.2mΩ Features General Description ̈ rDS on = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDS8870

Contextual Info: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: DH2x60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A 230 ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DH2x61-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs 1800 V 60 A 230 ns Part number DH2x61-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: FDS8672S N-Channel tm PowerTrench SyncFET 30V, 18A, 4.8mΩ Features General Description ̈ Max rDS on = 4.8mΩ at VGS = 10V, ID = 18A The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V

FDS8870

Contextual Info: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM