180V REGULATOR Search Results

Contextual Info: LM2483 LM2483 180V Triple Bias Clamp Literature Number: SNOSA33B October 25, 2011 LM2483 180V Triple Bias Clamp General Description Features The LM2483 driver is an Integrated 180V triple bias clamp circuit for DC recovery of each of the AC coupled outputs of

reverse bias diode characterstics

Abstract: rfl1n18 AN7254 AN7260 RFL1N20 TB334
Contextual Info: RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFK25N18, RFK25N20 Semiconductor Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs File Number 1500.3 Features • 25A, 180V and 200V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

Contextual Info: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: OBSOLETE LM2483 www.ti.com SNOSA33C – NOVEMBER 2002 – REVISED APRIL 2013 LM2483 180V Triple Bias Clamp Check for Samples: LM2483 FEATURES DESCRIPTION • • • The LM2483 driver is an Integrated 180V triple bias clamp circuit for DC recovery of each of the AC

Contextual Info: W vys S RFL1N18, RFL1N20 S e m ico n d ucto r 7 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 180V and 200V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFL1N18, RFL1N20 S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: DXT696BK 180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252 Features Mechanical Data •   BVCEO > 180V IC = 0.5A high Continuous Collector Current ICM = 1A Peak Pulse Current    High gain device > 500 at IC =100mA      Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

DIODE N20

Contextual Info: RFL1N18, RFL1N20 HARRIS S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

n925

Contextual Info: Ordering number : EN2583A smyo i i No.2583A _ S B 8 - 1 8 Schottky Barrier Diode Twin Type • Cathode Common 180V, 8A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers)

SB100-18

Abstract: EN2580B
Contextual Info: SB100-18 Ordering number : EN2580B SANYO Semiconductors DATA SHEET SB100-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • •

Contextual Info: LM 2483 LM2483 180V Triple Bias Clamp Te x a s In s t r u m e n t s Literature Number: SNOSA33B * O cto b e r 25, 2011 e x a s LM2483 In s t r u m e n t s 180V Triple Bias Clamp General Description Features T he L M 2483 d riv e r is an Integrated 18 0 V triple b ia s clam p

SB05-18V

Contextual Info: Ordering number:EN5683 SB05-18V Schottky Barrier Diode 180V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1289 [SB05-18V] Features · Low forward voltage (VF max=0.85V).

SB05-18M

Contextual Info: Ordering number:EN2655A SB05-18M Schottky Barrier Diode 180V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1158 [SB05-18M] Features · Low forward voltage (VF max=0.85V).

sy 360 diode

Abstract: SB50-18
Contextual Info: SB50-18 Ordering number : EN2579C SANYO Semiconductors DATA SHEET SB50-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 50A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • •

EN2580

Abstract: SB100-18
Contextual Info: SB100-18 Ordering number : EN2580B SANYO Semiconductors DATA SHEET SB100-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • •

Contextual Info: Ordering number:EN4709 SBA120-18J Schottky Barrier Diode Twin Type • Cathode Common 180V, 12A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1178A [SBA120-18J] Features · Low forward voltage (VF max=0.85V).

Contextual Info: O rd e rin g n u m b e r : EN2582A N0.2582A _ S B 1 2 - 1 8 Schottky B arrier Diode Twin Type • Cathode Common 180V, 12A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers)

RFK25N20

Abstract: AN7254 AN7260 RFK25N18
Contextual Info: RFK25N18, RFK25N20 Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: Ordering number : EN2584A N0.2584A _ S B 3 0 - 1 8 Schottky Barrier Diode Twin Type • Cathode Common 180V, 3A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers) Features • Low forward voltage (Vp max = 0.85V)

Contextual Info: Ordering number:EN2583B SB80-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 8A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1160 [SB80-18] Features · Low forward voltage (VF max=0.85V).

Contextual Info: Ordering number:EN4709 SBA120-18J Schottky Barrier Diode Twin Type • Cathode Common 180V, 12A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1178A [SBA120-18J] Features · Low forward voltage (VF max=0.85V).

sb50

Contextual Info: Ordering number:EN2684B SB50-18K Schottky Barrier Diode Twin Type • Cathode Common 180V, 5A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1199B [SB50-18K] Features · Low forward voltage (VF max=0.85V).

SB30-18

Abstract: EN2584B
Contextual Info: Ordering number:EN2584B SB30-18 Schottky Barrier Diode Twin Type • Cathod Common 180V, 3A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1159B [SB30-18] Features · Low forward voltage (VF max=0.85V).