17E PART MARKING Search Results

TDC 1013

Abstract: z80 sio d217e FL404 17e PART MARKING Z84C4X Z84C4X08 Z84C4X04
Contextual Info: ZILOG INC 17E D Zilog TJfl4D43 001Q54A h Product S pecification 'T - S Z - > _ 3 - 0 3 January 1989 Z8440/1/2/4, Z84C40/1/2/3/4 NMOS/ CMOS Z80 SIO Serial Input/Output Controller FEATURES \ ^ • Two independent full-duplex channels, with separate control and status lines for modems or other devices.

Contextual Info: Z I L OG INC 17E D • ^ “104043 0011*173 4 October 1988 Z80C 30 C M O S Z - B U S S C C / Z 85C 30 C M O S SCC Serial ' Communications Controller Features Low power CMOS. Pin compatible to NMOS versions. Two independent, 0 to 2.5M bit/second, full-duplex

E0823

Abstract: z603
Contextual Info: ZI LO G INC 17E D • G012004 1 U ^34043 Z8030 Z-BUS SCC/ Z8530 SCC Serial Communications Controller October 1987 Features ■ Two independent, 0 to 2M bit/second, fullduplex channels, each with a separate crystal oscillator, baud rate generator, and Digital

Z8671

Abstract: z8671 zilog Microprocessor z8671 Z8671 basic w5T marking R/S3C9004/P9004/C9014/Z8671
Contextual Info: 17E D ZILOG INC -V-T- '•& tâCC:^ *?£'&•&:« tV>>*W5t ^04043 000^413 □ »rodùct Specification' Z8671 Z8 MCU with BASIC/Debug Interpreter _ , -T - q o \ - i i - o 7 June 1987 • The Z8671 MCU is a complete microcomputer

5ts8

Abstract: IN SDLC PROTOCOL CRC-16 Z80C30 Z85C30
Contextual Info: ZILOG INC 17E 3> T=1640Li3 0011173 4 T - 7 5 '3 7 '¿ > 7 October 1988 Z80C 30 C M O S Z - B U S S C C / Z 85C 30 C M O S SCC Serial ' Communications Controller Features • Low power CMOS. ■ Pin compatible to NMOS versions. ■ T w o independent, 0 to 2.5M bit/second, fu ll-du p le x

Z8000

Abstract: z851
Contextual Info: Z I L O G I NC 17E D • =HfiMÜ43 G01 2 1 3 7 b ZS516/Z9516 DMA Transfer Controller DTC October 1988 FEATURES Optional automatic chaining of operations ■ Two independent multi-function channels ■ Transfer Modes: single, demand dedicated with bus hold, demand dedicated with bus release, demand

0082ZR14-3

Abstract: stetron relay 765NR 0056ZR14 47ZR 0068ZR07-1 ZR 720 relay stetron 0033ZR07-1 0039ZR05-0
Contextual Info: STETRON INTERN ATION AL INC 17E D • Metal Oxide Varistors fibSmSD DGD01?b Ü ■ Applications Applications of MNR Varistors As mentioned in the introduction, MNRs have many and varied applications, some of which are listed below for easy reference: •Telephone and PABX equipment.

bcm2835

Abstract: BROADCOM BCM2835
Contextual Info: 1 1 1 1 1 1 BCM2835 ARM Peripherals 2012 Broadcom Corporation. All rights reserved Broadcom Europe Ltd. 406 Science Park Milton Road Cambridge CB4 0WW Table of Contents 11 Introduction 1.11 Overview 1.21 Address map 1.2.11 Diagrammatic overview 1.2.21 ARM virtual addresses standard Linux kernel only

smd diode wv4

Abstract: SMD wv4 Diode BFT smd wv4 diode wv4 smd marking WV4 smd diode WV1 IRL540 IRL540S J-10
Contextual Info: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

marking WV4

Abstract: smd diode wv4 1RL540 SMD wv4 DIODE smd marking WV4 smd diode WV1 diode wv4 jb0 marking DIODE 28A Diode BFT smd
Contextual Info: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

RG2 DIODE

Abstract: t4vd
Contextual Info: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

VS-GA100TS120UPBF

Contextual Info: VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode

TRANSISTOR TC 100

Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

mosfet 4456

Abstract: p94a marking U6 SOD123 GRM55RR
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and

CT7343

Abstract: pa016 SC1302
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and

C3678

Abstract: PA016 2C16
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and

4456 mosfet

Abstract: mosfet 4456 SC4910 SC4910A SC4201 SC4910AITSTR SC4910B SC4910BITSTR c4910 SC4911
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and