17DEC01 Search Results

DG2003

Abstract: DG2005 DG2003DQ DG2004 DG2004DQ DG2005DQ HP4192A
Contextual Info: DG2003/2004/2005 New Product Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D Low Voltage Operation 1.8 V to 5.5 V Low On-Resistance - rDS(on): 1.2 W Fast Switching - 14 ns Low Charge Injection - QINJ: 1 pC

DG2003

Abstract: DG2005 DG2003DQ DG2004 DG2004DQ DG2005DQ HP4192A
Contextual Info: DG2003/2004/2005 New Product Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D Low Voltage Operation 1.8 V to 5.5 V Low On-Resistance - rDS(on): 1.2 W Fast Switching - 14 ns Low Charge Injection - QINJ: 1 pC

ntc 33

Abstract: ic t2117 triac 1.7 kw BC237 tic triac tic 236n ATMEL t2117 T2117 BYT41M T2117-3AS t2117 equivalent
Contextual Info: T2117 Zero-Voltage Switch with Adjustable Ramp Description The integrated circuit, T2117, is designed as a zerovoltage switch in bipolar technology. It is used to control resistive loads at mains by a triac in zero-crossing mode. A ramp generator allows power control function by

Si6880EDQ

Contextual Info: Si6880EDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.5 0.022 @ VGS = 2.5 V

M48Z35AV

Abstract: M48Z35AY M4Z28-BR00SH1 SOH28
Contextual Info: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ BATTERY LOW FLAG (BOK) ■ AUTOMATIC POWER-FAIL CHIP DESELECT

74572

Abstract: GFU25N03 nc900
Contextual Info: GFU25N03 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET H C N E ET R T F N TO-251 IPAK E D VDS 30V RDS(ON) 16.5mΩ ID 38A TM G 0.265 (6.73) 0.255 (6.48) 0.214 (5.43) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) D 0.050 (1.27) 0.035 (0.89)

Si4860DY

Abstract: 250MA160
Contextual Info: Si4860DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.008 @ VGS = 10 V 16 0.011 @ VGS = 4.5 V 15 APPLICATIONS

Contextual Info: DRAWING THIS MADE DRAWING IN 15 4 THIRD ANGLE UNPUBLISHED C O P Y R IG H T 19 3 PROJECTION RELEASED BY AN P FOR PUBLICATION IN C O R P O R A T E D . ALL 2 <3> IN T E R N A T IO N A L R IG H T S DI ST LOC 19 R E V I 5 I ON! DO DF RESERVED. LTR ZONE D E S C R IR T IO N

C2800

Contextual Info: 4 DRAWING THIS MA D E IN THIRD DRAWING C ANGLE 15 5 PROJECTION UNPUBLISHED. COPYRIGHT 19 RELEASED BY ANP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL , 19 RIGHTS RESERVED. D C 1.57 REF SECTION GOLD FLASH OVER CONTACT AREA. 00127 [ . 0 0 0 0 5 0 ] / . 0 0 0 7 6 [.000030]

atmel bootloader C51

Abstract: xaf hsb Programming Bootloader F000H rs232 parallel flash programmer F800H ATMEL PROTOCOL rs232 protocol CAN protocol program eeprom programmer
Contextual Info: Programming T89C51xx with Device Programmers Overview Most of the new T89C51xx from Atmel have one, two, or three memory areas and configuration bytes while device programmers usually provide a single programming buffer. This application note explains how to program Atmel T89C51xx microcontrollers with

DG9232

Abstract: DG9232DQ DG9232DY DG9233 DG9233DQ DG9233DY HP4192A
Contextual Info: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC

SUD25N15-52

Contextual Info: SUD25N15-52 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 0.060 @ VGS = 6 V 23 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS

GFU50N03

Abstract: 74575 15A-31
Contextual Info: GFU50N03 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET H C N E ET R T F N TO-251 IPAK E D VDS 30V RDS(ON) 9mΩ ID 65A TM G 0.265 (6.73) 0.255 (6.48) 0.214 (5.43) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) D 0.050 (1.27) 0.035 (0.89) S Features

74573

Abstract: 74573 datasheet datasheet 74573 GFU30N03
Contextual Info: GFU30N03 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET H C N E ET R T F N TO-251 IPAK E D VDS 30V RDS(ON) 15mΩ ID 43A TM G 0.265 (6.73) 0.255 (6.48) 0.214 (5.43) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) D 0.050 (1.27) 0.035 (0.89) S

M48Z02/12

Abstract: DS1220 M48Z02 M48Z12
Contextual Info: M48Z02 M48Z12 5V, 16 Kbit 2Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM and POWER-FAIL CONTROL CIRCUIT UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

DS1220

Abstract: M48Z02 M48Z12
Contextual Info: M48Z02 M48Z12 5V, 16 Kbit 2Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM and POWER-FAIL CONTROL CIRCUIT ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

TTC 103

Abstract: PLCC44 T89C51CC01 TQFP44 80C51 12MHz osc
Contextual Info: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM

100-W

Abstract: Si91845 Si91845DT-18-T1 Si91845DT-20-T1 Si91845DT-22-T1 Si91845DT-25-T1 Si91845DT-26-T1 Si91846 MARKING BW* SOT23-6 Si91845DT-27-T1
Contextual Info: Si91845/6 New Product Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Error Flag and Discharge Option FEATURES D Si91845: Output, Auto-Discharge in Shutdown Mode D Si91846: Output, No-Discharge in Shutdown Mode D Fixed 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3,

1745S

Abstract: AT91M55800A BGA-176 weight AT91M55800
Contextual Info: Features • Utilizes the ARM7TDMI ARM Thumb Processor Core • • • • • • • • • • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt

Contextual Info: Si6880EDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.5 0.022 @ VGS = 2.5 V

Si4812DY

Contextual Info: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 0.9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A

9233

Abstract: DG9232 DG9232DQ DG9232DY DG9233 DG9233DQ DG9233DY HP4192A
Contextual Info: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC

DG9262

Abstract: DG9262DQ DG9262DY DG9263 DG9263DQ DG9263DY HP4192A 05298
Contextual Info: DG9262/9263 New Product Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 40 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC

Contextual Info: M48Z02 M48Z12 5V, 16 Kbit 2Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM and POWER-FAIL CONTROL CIRCUIT ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION