176/DIODE ZENER C 47 PH Search Results

IN4960

Abstract: IN4964 1N4954-1N4996 1N4954 1N4955 1N4956 1N5968 1N5969 1N4989 JANTX 1N4968 JANTX
Contextual Info: POWER ZENERS 1N4954-1N4996 1N5968-1N5969 JAN, JANTX & JANTXV 5 Watt, Military FEATURES DESCRIPTION • 2 Times Greater Surge Rating than Conventional 10 Watt Zeners • Small Physical Size Fused-in-glass, metallurgically-bonded 5 watt zeners, qualified to MIL-S -19500/356.

U1ZB24

Abstract: diode code marking 220Y U1ZB330-Z U1ZB75 U1ZB200-Z 270z
Contextual Info: U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation : P = 1.0 W z Zener Voltage : VZ = 6.8 V ~ 390 V z Surface Mounting Plastic Mold Package ABSOLUTE MAXIMUM RATINGS Ta = 25°C

U1ZB10

Abstract: U1ZB11 U1ZB12 U1ZB13 U1ZB15 U1ZB16 U1ZB18 U1ZB20 U1ZB22 U1ZB390
Contextual Info: U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0 W Zener Voltage : VZ = 6.8 V ~ 390 V Surface Mounting Plastic Mold Package MAXIMUM RATINGS Ta = 25°C

1ZB36

Abstract: diode zener 441 DIODE 1zb36 IZB36 zener 1ZB20 zener Zener IT 243 1ZB36 zener 1zb43 IZB20 zener zener 1ZB220-y
Contextual Info: T O S H IB A 1 Z B 6 .8 -1 Z B 3 9 0 T O SHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION Unit in mm TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0W Peak Reverse Power Dissipation : P r s m —200W at tw = 200/^s

diode yz 140 zener

Abstract: AZ6 ZENER DIODE 1AZ11 1AZ15 1/a/diode yz 140 zener 1AZ6,8 1AZ10 1AZ12 1AZ13 1AZ16
Contextual Info: TOSHIBA 1A Z 6.8-1A Z330 T O SHIBA ZENER DIODE SILICON DIFFUSED TYPE 1AZ6.8-1AZ330 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS a Nl Average Power Dissipation : P = 1.0W Zener Voltage : Vz = 6.8—330V Withstand Hard Environment Plastic Mold Package

diode zener 441

Abstract: U1ZB10 U1ZB11 U1ZB12 U1ZB13 U1ZB15 U1ZB16 U1ZB330-X U1ZB390
Contextual Info: T O S H IB A U1ZB6.8~U1ZB390 TO SHIBA ZENER DIODE SILICON DIFFUSED TYPE U1 ZB6.8~U1 ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. TRANSIENT SUPPRESSORS. • • • Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8—390 V Surface Mounting Plastic Mold Package

1ZB220-Y

Abstract: 1ZB36 1ZB200-Y DIODE 1zb36 1ZB220Y 1ZB200Y Zener IT 243 1ZB20 zener diode zener 441 1ZB20
Contextual Info: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage : VZ = 6.8~390V

Contextual Info: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE II1 7 R K S ~ l l 1 7 R 3 q n Unit in mm CONSTANT VOLTAGE REGULATION. TRANSIENT SUPPRESSORS. • • • Average Power Dissipation : P=1.0W Zener Voltage : Vz = 6.8'-'390V Surface Mounting Plastic Mold Package

1ZB220-Y

Abstract: diode zener 441 DIODE 1zb36 1ZB220Y
Contextual Info: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1.0W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs l Zener Voltage : VZ = 6.8~390V

Zener IT 243

Abstract: U1ZB10 U1ZB11 U1ZB12 U1ZB13 U1ZB15 U1ZB16 U1ZB18 U1ZB20 U1ZB22
Contextual Info: U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0 W Zener Voltage : VZ = 6.8~390 V Surface Mounting Plastic Mold Package MAXIMUM RATINGS Ta = 25°C

U1ZB10

Abstract: U1ZB11 U1ZB12 U1ZB13 U1ZB15 U1ZB16 U1ZB18 U1ZB20 U1ZB22 U1ZB390
Contextual Info: U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1.0 W l Zener Voltage : VZ = 6.8~390 V l Surface Mounting Plastic Mold Package MAXIMUM RATINGS Ta = 25°C

z390

Abstract: 1ZB200-Y 1ZB220-Y 1ZB200Y 1ZB10 1ZB11 1ZB12 1ZB13 1ZB15 1ZB16
Contextual Info: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200 µs Zener Voltage : VZ = 6.8 V ~ 390 V

Contextual Info: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8-U1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. p3 TRANSIENT SUPPRESSORS. • • • + Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8~390 V Surface Mounting Plastic Mold Package

z390

Abstract: 1ZB220-Y DIODE 1zb36 1ZB200Y
Contextual Info: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation : P = 1.0W z Peak Reverse Power Dissipation : PRSM = 200W at tw = 200 µs z Zener Voltage : VZ = 6.8 V ~ 390 V

Zener IT 243

Abstract: 3Z47 zener toshiba 3z47 diode 3Z12-3Z390 toshiba zener
Contextual Info: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 371?~373Q fl Unit in mm VOLTAGE DETECTOR AND SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package P = 3W

DIODE RK 306

Abstract: 1ZB200 1ZB20 zener
Contextual Info: T O S H IB A 1 Z B 6 .8 -1 Z B 3 9 0 TO SHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8-1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package

DIODE RK 306

Abstract: DIODE 1zb36
Contextual Info: TOSHIBA 1ZB6.8-1ZB390 T O SHIBA ZENER DIODE SILICON DIFFUSED TYPE 17Rfi 8~17R 3Q f1 U nit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0W Peak Reverse Power Dissipation : P r SM~^ÛOW a t t\y = 20Ü//s Zençr Voltage

DL110

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Contextual Info: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

zener diode 7c3

Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Contextual Info: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

MRF255 equivalent

Abstract: electrolytic capacitor 470 mrf255
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

731 MOSFET

Abstract: 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L
Contextual Info: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

J360

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband