175 WIV HIGH SWITCHING Search Results

IN752 zener diode

Abstract: IN659 IN965 in4938 IN752 IN751 in755 zener in758 in753 zener in753 zener diode
Contextual Info: FAIRCHILD SEMICONDUCTOR ~ai deT| 3*4t i b 74 00271470 a J 3469674 FAIRCHILD SEMICONDUCTOR FAIRCHILD I A Schlumberger Company 84D 2 7 4 7 8 1N658/FDLL658 General Purpose Diodes T o i -Q°\ PACKAG ES 1N658 FDLL658 • B V . . . 120 V MIN @ 100 *iA • VF . 1 . 0 V ( M A X ) @ 1 00 mA

175 WIV High Switching

Abstract: FDH1000 FDLL1000
Contextual Info: 04 FAIRCHILD SEMICONDUCTOR DE | 3 4 b 1 b 7 4 00S733Ô 3 FDH1000/FDLL1000 FAIRCHILD High Conductance Switching Diodes A S c h lu m b e rg e r C o m p a n y T-o5-oq • V p . . . 1 V m a x @ 5 0 0 m A PACKAGES • Q s •. ■1 0 0 p C (m a x ) FDH1000 FDLL1000

Contextual Info: DIGITRON SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit WIV 50 V Average rectified current IO 100 mA Forward current steady state IF 300 mA Recurrent peak forward current if 400 mA if surge 1.0 4.0 A Power dissipation

DB050

Contextual Info: SEM IC O N DU C TO R 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes Absolute Maximum Ratings TSTG TJ WIV Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TC1N4148M Value Units 300 mW -65 to +150 °C +175

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 Features FAST SWITCHING LOW CAPACITANCE HIGH CURRENT CAPABILITY Description/Applications The 5082-1000 series of diodes feature planar silicon epitaxial construction to provide high conductance, low

DO35

Abstract: TC1N4148 TC1N4448 TC1N914B DB-036
Contextual Info: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

do213AC

Abstract: LL34 TCLL4148 ta65
Contextual Info: TAK CHEONG SEM IC O N DU C TO R 500 mW LL-34 Hermetically Sealed Glass Fast Switching Diodes SURFACE MOUNT LL34 Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range TJ Operating Junction Temperature

DO35

Abstract: 175 WIV High Switching
Contextual Info: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

1N4154

Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

Contextual Info: TAK CHEONG SEM IC O N DU C TO R 500 mW LL-34 Hermetically Sealed Glass Fast Switching Diodes SURFACE MOUNT LL34 Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range TJ Operating Junction Temperature

BV-1

Abstract: TC1N4148 TC1N4448 TC1N914B DO35
Contextual Info: SE M ICOND UC TOR 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD T STG TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range TJ Operating Junction Temperature

Contextual Info: TAK CHEONG TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

Contextual Info: TAK CHEONG SEM IC O N DU C TO R 500 mW LL-34 Hermetically Sealed Glass Fast Switching Diodes SURFACE MOUNT LL34 Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range TJ Operating Junction Temperature

FAIRCHILD DIODE

Contextual Info: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000

BV-1

Abstract: BV-1 150 JEDEC do-204
Contextual Info: SE M ICOND UC TOR 300 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO34 Absolute Maximum Ratings PD T STG Parameter Power Dissipation Storage Temperature Range TC1N4148M Value Units 300 mW -65 to +150 °C +150 °C L Symbol DEVICE MARKING DIAGRAM

Contextual Info: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature

1N4456

Contextual Info: H E W LE TT K 7 J I PACKARD High Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 1N4456 Features • F ast Switching • Low Capacitance • High Current Capability Description/ Applications The 5082-1000 series of diodes feature planar silicon epitaxial

1N4154

Abstract: FAIRCHILD DIODE
Contextual Info: 1N4154 High Conductance Fast Diode Features General Description • 500 milliwatt Power Dissipation package. • Fast Switching Speed. • Typical capacitance less than 1.0 picofarad. The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a

Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

CJ 4148

Abstract: MELF 4148 D IN 4148 diode 4148 diode IN 4148 melf switching diodes farnell 914B LS4148 LS4448
Contextual Info: LS4448.4148.914B Features: • • • • • • • • • Fast switching device TRR<4.0nS . Quadro mini-MELF package. Surface device type mounting. Hermetically sealed glass. Compression bonded construction. All external surfaces are corrosion resistant and leads are readily solderable.

F 9016 transistor

Abstract: 1N4448 1N914B
Contextual Info: 1621822 Features: • • • • • • • • • Fast switching device TRR<4.0nS . DO-35 package (JEDEC). Through-hole device type mounting. Hermetically sealed glass. Compression bonded construction. All external surface are corrosion resistant and leads

glass mini melf diode

Abstract: MELF DIODE color band BLUE mini melf diode LL914B
Contextual Info: 1621883 Features: • • • • • • • • • Fast switching device TRR< 4.0nS . LL-34 (Mini-MELF) package. Surface device type mounting. Hermetically sealed glass. Compression bonded construction. All external surfaces are corrosion resistant and terminals are readily solderable.

1S923

Abstract: IN5225 175 WIV High Switching
Contextual Info: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000

IN5225

Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.