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170N2013
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Cooper Bussmann
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High Speed Fuse |
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NTR4170NT1G
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VBsemi Electronics Co Ltd
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N-Channel 30-V MOSFET with 0.030 ohm RDS(on) at 10 V VGS, 6.5 A continuous drain current, 4.5 nC typical gate charge, and SOT-23 package, suitable for DC/DC converters. |
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JMTP170N06A
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 10A N-channel enhancement mode Power MOSFET in SOP-8 package with RDS(on) less than 15.9 mΩ at VGS = 10V, featuring advanced trench technology, low gate charge, and suitability for load switch, PWM, and power management applications. |
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JMTC170N10A
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 59A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(on) less than 20 mΩ at VGS = 10V, suitable for power management and load switching applications. |
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JMTG170N06A
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 40A N-channel enhancement mode power MOSFET in PDFN5x6-8L package with RDS(on) less than 15mΩ at VGS=10V, featuring advanced trench technology for low gate charge and high efficiency. |
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JMTP170N06D
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-channel enhancement mode power MOSFET with 60V drain-source voltage, 9.2A continuous drain current, and low on-resistance of 20.4mΩ at VGS=10V in SOP-8 package. |
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JMTM170N04A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 8A N-channel Enhancement Mode Power MOSFET in SOT-23-6L package with RDS(ON) less than 22mΩ at VGS=10V and low gate charge, suitable for load switch, PWM, and power management applications. |
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JMTK170N10A
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 59A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(on) less than 20mΩ at VGS=10V, suitable for load switching, PWM, and power management applications. |
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NTR4170NT1G
