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    16N50 Search Results

    16N50 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    16_N-50-3-27/133_NE
    HUBER+SUHNER 16_N-50-3-27/133_NE Original PDF 774.77KB
    16_N-50-7-77/133_NE
    HUBER+SUHNER 16_N-50-7-77/133_NE Original PDF 814.09KB
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    16N50 Price and Stock

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    STMicroelectronics STD16N50M2

    MOSFET N-CH 500V 13A TO252
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    DigiKey () STD16N50M2 Cut Tape 3,372 1
    • 1 $2.21
    • 10 $1.42
    • 100 $0.96
    • 1000 $0.74
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    STD16N50M2 Digi-Reel 3,372 1
    • 1 $2.21
    • 10 $1.42
    • 100 $0.96
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    STD16N50M2 Reel 2,500 2,500
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    Newark STD16N50M2 Cut Tape 100 1
    • 1 $0.92
    • 10 $0.92
    • 100 $0.84
    • 1000 $0.78
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    STMicroelectronics STD16N50M2 1,721 1
    • 1 $2.13
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    TME STD16N50M2 2,500 2,500
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    Avnet Silica STD16N50M2 2,500 15 Weeks 2,500
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    EBV Elektronik STD16N50M2 16 Weeks 2,500
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    IXYS Corporation IXFP16N50P

    MOSFET N-CH 500V 16A TO220AB
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    DigiKey IXFP16N50P Tube 842 1
    • 1 $5.52
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    TTI IXFP16N50P Tube 300
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    TME IXFP16N50P 286 1
    • 1 $5.61
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    Component Electronics, Inc IXFP16N50P 25
    • 1 $3.08
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    • 100 $2.31
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    STMicroelectronics STF16N50M2

    MOSFET N-CH 500V 13A TO220
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    DigiKey STF16N50M2 Tube 704 1
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    STMicroelectronics STF16N50M2 703 1
    • 1 $2.43
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    TME STF16N50M2 1
    • 1 $2.40
    • 10 $1.91
    • 100 $1.17
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    Avnet Silica STF16N50M2 15 Weeks 50
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    Chip One Stop STF16N50M2 Tube 1,000 0 Weeks, 1 Days 1
    • 1 $2.29
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    EBV Elektronik STF16N50M2 16 Weeks 50
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    onsemi FDA16N50-F109

    MOSFET N-CH 500V 16.5A TO3PN
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    DigiKey FDA16N50-F109 Tube 619 1
    • 1 $3.64
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    Avnet Americas FDA16N50-F109 Tube 8 Weeks 450
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    Newark FDA16N50-F109 Bulk 450
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    Richardson RFPD FDA16N50-F109 450
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    Avnet Asia FDA16N50-F109 8 Weeks 450
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    Flip Electronics FDA16N50-F109 158
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    IXYS Corporation IXFP16N50P3

    MOSFET N-CH 500V 16A TO220AB
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    DigiKey IXFP16N50P3 Tube 154 1
    • 1 $6.01
    • 10 $6.01
    • 100 $2.97
    • 1000 $2.48
    • 10000 $2.48
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    TTI IXFP16N50P3 Tube 300
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    Vyrian IXFP16N50P3 200
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    16N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    16N50

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    16N50 O-220F 16N50 O-220F2 QW-R502-532 PDF

    16N50P

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original
    16N50P O-220 O-263 O-247 16N50P PDF

    Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    16N5001/S14 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    16N5001/S14 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    16N5001/S14 PDF

    Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    16N5001/S14 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


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    16N5004/S14 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm


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    16N5004 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    16N5001/S14 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm


    Original
    16N5004 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


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    16N5004/S14 PDF

    a8aa

    Contextual Info: Optoelektronische Sensoren Photo electric sensors Cellules opto-électroniques Abmessungen Dimensions Dimensions OHDM 16N5001 Elektrischer Anschluss Connection diagram Schéma de raccordement BN 1 Í?*+Ã8ÂÂ*ÂPÎ *34,5 Z dark operate light operate 0V


    Original
    16N5001 2002/95/EC a8aa PDF

    16n50

    Abstract: 646V
    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ = 200 ns RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original
    16N50P 16N50P O-220 O-263 O-247 16n50 646V PDF

    Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    16N50P 16N50P O-220 O-263 405B2 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw


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    16N5001/S14 prot34 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm


    Original
    16N5001 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm


    Original
    16N5001 PDF

    Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    16N5001/S14 PDF

    Contextual Info: Photoelectric sensors OHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red laser diode sensing distance Tw


    Original
    16N5001 680nm PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-220F1 The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    16N50 O-220F1 16N50 O-220F2 QW-R502-532 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    16N5004/S14 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm


    Original
    16N5004 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm


    Original
    16N5001 PDF

    Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    16N5004/S14 PDF