16MB SRAM Search Results

PSEUDO SRAM

Abstract: SRAM HIO15
Contextual Info: 16Mb Pseudo SRAM IS66WV1M16DBLL ► Applications ISSI is now sampling a 16Mb Pseudo SRAM, the latest addition to our SRAM portfolio. 16Mb Pseudo SRAM provides a cost effective solution to a standard SRAM socket. The pinout of the 16Mb PSRAM is identical to the regular 16Mb LP SRAM,

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES

SST32HF162

Abstract: SST32HF164 SST32HF802
Contextual Info: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 1648Mb Flash + 2Mb SRAM, 16Mb Flash + 2Mb SRAM, 16Mb Flash + 4Mb SRAM (x16) MCP ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES

SRAM 256KB 6ns

Abstract: DRAMs edo dram 50ns 72-pin simm 2mb 72-pin simm ibm comp 128m simm 72 pin 64mb edo dram simm 64mb 72-pin simm
Contextual Info: D RAM Numbe ring Numbering Page 1 Contents IBM bb cc dd e f gg h - jj cc Index bb Product Family Density 01 03 DRAM SDRAM 4 5 16 17 18 64 65 66 4Mb, Normal Addressing 10/10, 10/9, 9/9 4Mb, Alternate Addressing (10/8) 16Mb, 4K Refresh 16Mb, 2K Refresh 16Mb, 1K Refresh

SST32HF32A2

Abstract: SST32HF64A2 SST32HF64B2 235AH
Contextual Info: Multi-Purpose Flash Plus + PSRAM ComboMemory SST32HF32A2 / SST32HF64A2 / SST32HF64B2 SST32HF32A / 64A2/64B232Mb Flash + 16Mb SRAM, 64Mb Flash + 16Mb/32Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemories organized as: – SST32HF32A2: 2M x16 Flash + 1024K x16 PSRAM

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES

DS1270W

Contextual Info: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

GW 9n

Abstract: MT58L512Y36D MT58V1MV18D MT58V512V32D MT58V512V36D 100-PIN MS-026 MT58L1MY18D MT58L512Y32D
Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES

64MB SRAM

Abstract: MO-47
Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PEC THIS PRODUCT IS SUBJECT TO MICROSS PCN-1109 AND REPLACED BY AS8S512K32PECA. 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit DESCRIPTION FEATURES The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The

AS8S512K32

Abstract: AS8S512K32PEC AS8SLC2M32PEC AS8SLC512K32 16MB SRAM MO-47
Contextual Info: i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and

AS8S512K32

Abstract: AS8S512K32PEC AS8SLC2M32PEC
Contextual Info: i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and

DS1270W

Abstract: DS2070W-100 DS2070W
Contextual Info: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

AS8SLC512K32

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES 100-Pin TQFP1 • High frequency and 100 percent bus utilization

MT55V512Y36F

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES 100-Pin TQFP1 • High frequency and 100 percent bus utilization

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1 • Fast clock and OE# access times

for 3g 4e

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1 • Fast clock and OE# access times

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES 100-Pin TQFP1 • High frequency and 100 percent bus utilization

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20

16mb HIGH-SPEED ASYNCHRONOUS SRAM

Abstract: GW 9n 195-pin
Contextual Info: ADVANCE‡ 16Mb: 256K x 72 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L256Y72P, MT55V256V72P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • • • • • • • 221-PIN FBGA High frequency and 100 percent bus utilization